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    SILICON PNP EPITAXIAL PLANAR TRANSISTOR Search Results

    SILICON PNP EPITAXIAL PLANAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PNP EPITAXIAL PLANAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with


    Original     		PDF 2SA1694 2SA1694 2SA1694L-x-T3P-T 2SA1694G-x-T3P-T 2SA1694L-x-T3N-T 2SA1694G-x-T3N-T QW-R214-016

    2sa1694

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with


    Original     		PDF 2SA1694 2SA1694 2SA1694L-x-T3P-T 2SA1694G-x-T3P-T 2SA1694L-x-T3N-T 2SA1694G-x-T3N-T QW-R214-016

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high


    Original     		PDF 2SA1693 2SA1693 2SA1693L-x-T3P-T 2SA1693G-x-T3P-T QW-R214-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high


    Original     		PDF 2SA1693 2SA1693 2SA1693L-x-T3P-T 2SA1693G-x-T3P-T QW-R214-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE  DESCRIPTION The UTC 2SB936 is a silicon PNP epitaxial planar type, it uses UTC’s advanced technology to provide the customers with high DC


    Original     		PDF 2SB936 2SB936 2SB936L-TN3-T 2SB936G-TN3-T O-252 2SB936L-TN3-R 2SB936G-TN3-R QW-R209-029

    2N5322

    Abstract: 2N5323 2N5321 2N5320
    Text: 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal


    Original     		PDF 2N5322 2N5323 2N5320 2N5321 2N5322 2N5323 2N5321

    2N5322

    Abstract: 2N5323 2N5320 2N5321
    Text: 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal


    Original     		PDF 2N5322 2N5323 2N5320 2N5321 2N5322 2N5323 2N5321

    Untitled

    Abstract: No abstract text available
    Text: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP


    Original     		PDF 2N3502 2N3503 2N3504 2N3505 2N3503" 10/10m 200MHz 2N3503-JQR-B

    Untitled

    Abstract: No abstract text available
    Text: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP


    Original     		PDF 2N3502 2N3503 2N3504 2N3505 300mA 100MHZ -30mA

    transistor 2N3504

    Abstract: 2N3503 2N3504 2N3505 2N3502
    Text: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP


    Original     		PDF 2N3502 2N3503 2N3504 2N3505 150mA 500mA 300mA 100MHZ transistor 2N3504 2N3503 2N3504 2N3505 2N3502

    2n3503

    Abstract: No abstract text available
    Text: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP


    Original     		PDF 2N3502 2N3503 2N3504 2N3505 analog-10 150mA 500mA

    2N3503

    Abstract: 2N3505
    Text: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP


    Original     		PDF 2N3502 2N3503 2N3504 2N3505 2N3503" 2N3503-JQR-B 10/10m 200MHz 2N3505

    transistor 2N3504

    Abstract: 2N3504 2N3505 2N3503 2N3502
    Text: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP


    Original     		PDF 2N3502 2N3503 2N3504 2N3505 500mA 100MHZ -30mA transistor 2N3504 2N3504 2N3505 2N3503 2N3502

    DMA364A3

    Abstract: No abstract text available
    Text: DMA364A3 Tentative Total pages page DMA364A3 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : H5 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF DMA364A3 DMA364A3

    31495MO

    Abstract: transistor za
    Text: O rdering num ber: EN 5063 No.5063 SA % Y O i I I _ I PNP Epitaxial Planar Silicon Transistor With bias FC155 resistances PNP Epitaxial Planar Silicon Transistor Constant-Current Circuit Applications F eatures


    OCR Scan     		PDF FC155 -----15V --10mA --400mA --50mA --200mA, --200mA FC155 31495MO transistor za

    Untitled

    Abstract: No abstract text available
    Text: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.


    OCR Scan     		PDF 2N3905 2N3906 2N3905 2N3906 2N3903 2N3904 T0-92A 100MHz 100kHz 100juA

    Untitled

    Abstract: No abstract text available
    Text: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF T0-92A MPS6516 MPS6519 MPS6519 MPS6516/7/8 MPS6516/7/8 100mA Boxfe477, 100kHz 10kHz

    MPS6516

    Abstract: MPS6519 MPS6517 MPS6518 E3060
    Text: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF MPS6516 MPS6519 T0-92A MPS6516/7/8 100mA 350mW MPS6517 MPS6518 E3060

    2SA816

    Abstract: 2SC1626 BOX69477 COB20 MIPO
    Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED


    OCR Scan     		PDF 2SA816 2SC1626 2SC1626 0-50V T0-220B 750mA 500mA 150mA 2SA816 BOX69477 COB20 MIPO

    MPS6516

    Abstract: MPS6519 mps6518
    Text: UHM IVII V V V I V PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF MPS6516 MPS6519 T0-92A MPS6516/7/8 100mA 350mW MPS6519 100mA 350mW mps6516/7/8 mps6518

    2SA816

    Abstract: 2SC1626 2SC16
    Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED


    OCR Scan     		PDF 2SA816 2SC1626 0-50W T0-220B 80x69477 3-43018J-6 3f093J03 2SA816 2SC1626 2SC16

    2SC1626

    Abstract: 2SA816
    Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED


    OCR Scan     		PDF 2SA816 2SC1626 T0-220B 2SA816 0-50W 750mA CHARACT2SC1626 2SC1626

    TFK BSV 60

    Abstract: c20m TFK 175 tfk a BSV16
    Text: BSV 15 • BSV 16 Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W


    OCR Scan     		PDF O-20V 211N414 TFK BSV 60 c20m TFK 175 tfk a BSV16

    transistor BF 257

    Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
    Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität


    OCR Scan     		PDF