SILICON POWER CONVERTERS Search Results

BUV26

Abstract: V50B
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS

CASE 221A Style 1

Abstract: BUV26
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS

BD139

Abstract: BD139 h parameters BD140 BUX84 BUX85 BD139 fall time
Contextual Info: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

BD139 fall time

Abstract: transistor 400 volts.50 amperes BD139 time
Contextual Info: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

BD139

Abstract: BD140 BUX84 BUX85 BD139 fall time BD139 time
Contextual Info: ON Semiconductort BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

AN569 in Motorola Power Applications

Abstract: MTM20P08 motorola an569 Motorola ON mosfet DS3700 AN569 MTH20P08 tmos fet c3709 MTH20PI0
Contextual Info: Order this data sheet by MTH20P08/D MOTOROLA SEMICONDUCTOR~ -.z TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS high speed Power power tors, converters, Silicon solenoid Designer’s

2SA1046

Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

bux85

Abstract: Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 60 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

fet irf830

Abstract: MTM4N45
Contextual Info: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds

Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

phe13007

Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

Contextual Info: ON Semiconductort MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150–200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

PHE13007

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

NT 407 F TRANSISTOR

Abstract: BD139 BD139 h parameters TRANSISTOR NPN BD139 BD139 MOTOROLA BUX85 BD140 BUX84 BD139 TRANSISTOR
Contextual Info: MOTOROLA Order this document by BUX85/D SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

2N5657

Abstract: 2N5655 2N5655G 2N5657G N565
Contextual Info: 2N5655, 2N5657 Plastic NPN Silicon High−Voltage Power Transistor These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS NPN SILICON

mje15033 replacement

Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

mje341

Abstract: MJE-344 mje344
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium -Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f f such as converters and extended range amplifiers.

Contextual Info: 2N5655, 2N5657 Plastic NPN Silicon High−Voltage Power Transistor These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS NPN SILICON

2sa1008 nec

Abstract: 2SA1008 2SC2331
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.

1069A

Abstract: D1485 2SA1069
Contextual Info: DATA SHEET SILICON POWER TRANSISTORS 2SA1069, 1069A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1069/1069A are the mold power transistors developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power

2SC2334

Abstract: nec 2Sa1010 Contact Electronics electronics data book 2SA1010 nec transistor
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.

2N3738

Abstract: 2N3739 new england semiconductor transistors
Contextual Info: 2N3738^ 2N3739* MW ^NEW ENGLAND SEMICONDUCTOR ^ *also available as JAN, JANTX, HIGH VOLTAGE SILICON POWER TRANSISTORS 1.0 AMPERE POWER TRANSISTORS NPN SILICON .designed for high-speed sw itching, linear am plifier applications, high-voltage operational am plifiers, sw itching regulators, converters,

phe13007

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,

PHE13009

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,