fet irf830
Abstract: MTM4N45
Text: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds
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IRF830
IRF830/D
fet irf830
MTM4N45
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Motorola transistors MJE3055 TO 127
Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.
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D44VH
D45VH
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
Motorola transistors MJE3055 TO 127
MJE1092
transistors 2sd673
2SC1419
transistor MJE6043
BU124
MJW16010
BD590
2SB654
bdw93c pin configuration
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2SD560
Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is
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2SD560
2SD560
O-220AB
O-220AB)
nec 2sd560
2sd560 equivalent
NEC RELAY
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2SC4554
Abstract: 2sc4554 nec
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a low power dissipation.
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2SC4554
2SC4554
2sc4554 nec
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Untitled
Abstract: No abstract text available
Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING
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TIP105
TIP105
O-220
TIP102.
O-220
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TIP102
Abstract: TIP105
Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING
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TIP105
TIP105
O-220
TIP102.
O-220
P011CI
TIP102
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TIP102
Abstract: TIP105
Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING
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TIP105
TIP105
O-220
TIP102.
O-220
TIP102
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2SA1046
Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.
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2N6251
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SA1046
2N3055
BU108
transistor K 3596
BU326
BU100
TL MJE2955T
MJE3055T
2N3174
2SC936
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2SA1046
Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85
BUX85
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2SA1046
380 darlington to3 ibm
REPLACEMENT BD139
BU326
BU108
BU100
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Marking H2
Abstract: code M.H diode marking H2 M1MA151 marking M1MA151KT1 M1MA152KT1 SC59 H222 H21 MARKING
Text: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. M1MA151KT1 M1MA152KT1
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M1MA151KT1
M1MA152KT1
SC-59
M1MA151/2KT1
inch/3000
-100mA
M1MA151/2KT3
inch/10
M1MA151KT1
Marking H2
code M.H
diode marking H2
M1MA151 marking
M1MA152KT1
SC59
H222
H21 MARKING
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2SC4553
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a
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2SC4553
2SC4553
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M1MA151KT1
Abstract: M1MA152KT1 SMD310
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
r14525
M1MA151KT1/D
M1MA151KT1
M1MA152KT1
SMD310
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M1MA152AT1
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
M1MA152AT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
M1MA152AT1
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H122
Abstract: M1MA151 marking marking H1 M1MA151AT1 M1MA152AT1
Text: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use M1MA151AT1 M1MA152AT1 in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.
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M1MA151AT1
M1MA152AT1
SC-59
-100mA
M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
H122
M1MA151 marking
marking H1
M1MA152AT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
M1MA152KT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
M1MA152KT1
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M1MA151 marking
Abstract: M1MA151AT1 M1MA152AT1 SMD310
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
r14525
M1MA151AT1/D
M1MA151 marking
M1MA151AT1
M1MA152AT1
SMD310
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Untitled
Abstract: No abstract text available
Text: M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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M1MA141KT1G,
M1MA142KT1G
SC-70
M1MA141KT1
M1MA142KT1
M1MA141KT1/D
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Untitled
Abstract: No abstract text available
Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151KT1,
M1MA152KT1
SC-59
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
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Untitled
Abstract: No abstract text available
Text: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151AT1,
M1MA152AT1
SC-59
M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141KT1G
S-LM1MA141KT1G
LM1MA142KT1G
S-LM1MA142KT1G
AEC-Q101
70/SOTâ
LM1MA141KT1G
S-LM1MA141KT1G
LM1MA142KT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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M1MA141KT1
Abstract: M1MA142KT1 SMD310
Text: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141KT1
M1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
70/SOT
M1MA141Ks
M1MA141KT1
M1MA142KT1
SMD310
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