TIP102 Search Results

T1P102

Contextual Info: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107

Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

TIP107 Texas

Contextual Info: TEXAS INSTR -COPTO} "B 961726 b5 TEXAS IN S T R D eT| flit 1 75b Q03ba7t, 0 COPTOT 62C 3 6 8 7 6 TIP 105, TIP106, TIPI 07 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIPIOO, T IP 101, TIP102

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP100 TIP101 TIP102 NPN TIP105 TIP106 TIP107 PNP TO-220 Plastic Package Intended for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC

p107 to-220

Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN

Contextual Info: MCC TM Micro Commercial Components TIP100 TIP101 TIP102
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

TIP102G

Abstract: TIP102 TIP101 TIP105G TIP106 TIP100 TIP100G TIP101G TIP105 TIP107
Contextual Info: TIP100, TIP101, TIP102 NPN ; TIP105, TIP106, TIP107 (PNP) TIP101, TIP102, TIP106 and TIP107 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features

Complementary Darlington Audio Power Amplifier

Abstract: TIP102 TIP107
Contextual Info: TIP102 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with TIP105, TIP106 and TIP107 TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature

D 1878 TRANSISTOR

Contextual Info: TtP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS CopyrlaW 0 1997, Power Innovations Llmltsd. UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 • D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102

Contextual Info: TIP102 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

Contextual Info: UTC TIP107 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications. FEATURE *Low VCE sat *High current gain *Complementary to TIP102 1 TO-220 1:BASE

Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

Contextual Info: TIPI 00, TIPI 01, TIP102 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1978 - REVISED MARCH 1997 Designed for Complementary Use with TIP105, TIP106 and TIP107 T 0 -2 2 0 PACKAGE TOP VIEW • 80 W at 25°C Case Temperature

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 Boca Semicondcutor Corp. BSC TIP100, 101, 102

Contextual Info: TIP102 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER

TIP106

Abstract: 1N5825 MSD6100 TIP100 TIP101 TIP102 TIP105 TIP107
Contextual Info: ON Semiconductor NPN TIP100 TIP101* Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. TIP102 * PNP • High DC Current Gain — • • • • TIP105 hFE = 2500 Typ) @ IC

IP100

Contextual Info: TIP100 TIP102 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP100, and TIP102 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear

TIP102

Abstract: TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

transistor T 023

Abstract: TIP107G TRANSISTOR 023 TIP102 TIP107
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP107 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications. „ FEATURES * Low VCE SAT * High Current Gain * Complementary to TIP102

Contextual Info: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors

TRANSISTOR D 1978

Abstract: TIP107 TIP100 TIP101 TIP102 TIP105 TIP106
Contextual Info: TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

T1P101

Abstract: TIPI02 T1P100
Contextual Info: TIP1Q0, T1P101, TIP102 NPN SILICON POWER DARLINGTONS Copyright c 1997, Power Innovations limned, UK_ • Designed for Complementary Use with TIP105, T IPI 06 and TIP107 • 80 W at 25°C Case Temperature AU G U ST 197B - R E V IS E D M AH CH 1997