SILICON TRANSISTER Search Results

MMBT2907ALT1G

Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Contextual Info: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage

MMBT2907ALT1G

Abstract: transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Contextual Info: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage

Contextual Info: O K I Semiconductor MSM548512L 524,288-W ord x 8-B it H igh-Speed PSR A M DESCRIPTION The MSM548512L is fabricated using OKI's CMOS silicon gate process technology. This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum

transisters

Abstract: 2SA1036K 2SA1577 2SC2411K 2SC4097 Power transisters ScansUX38
Contextual Info: 2SA1036K/2SA1577 h- "7 > v 7s $ /Transistors I fci £ * v \ s - i - M PNP y ' j 3 > Epitaxial Planar PNP Silicon Transisters 4 * ^ / Medi um Power Amp. 2 S A 1036K 2 S A 1577 • i iHI2\i‘;&|I3/'Dimensions Unit : mm) 2SA1577 2S A1036K lc Max.= —500mA

2N604

Abstract: MJE6043 power transister data MJE6045 2N6040 2N6041 2N6042 2N6043 2N6044 2N6045
Contextual Info: : .,!. . ,-, ., , ~./ ;/f: , ,fi-;p.i ,., .; ,., , “ :\ .; .? 2N6040 thru 2N604-2PNP 2N6043 thru 2N6045 ‘NPN , MJE6040thrti”MJE6042PNP ~~~ MJE6043 thru MJE6045 NR~ MOTOROLA @ PLASTIC COMPLEMENTARY designed MEDIUM-POWER SILICON TRANSISTORS for general. purpose

1036K

Contextual Info: 2SA1036K/2SA1577 h ~7 > v ^ $ / T ransistors X 2SA 10 3 6 K 2SA 1577 t ° ^ d r V T ^ y i ^ - ^ P N P ' > ' ; = ! > h - 7 > V * * Epitaxial Planar PNP Silicon Transisters • i^ ^ Jti'liffl/M ed iu m Power Amp. W fi \H ±[l./Dim ensions Unit: mm • « *

MOBILE LCD DISPLAY

Abstract: Color TFT LCD Module cpu interface LCD COLOR DISPLAY MODULE TFT lcd RGB display driver COG LCD DISPLAY active year code IC 2844 NM186TA MN863480 TFT MOBILE DISPLAY
Contextual Info: LCD Module 1 IMM186A31A Module Spec • 일반 개요 • NM186TA 는 비정질 실리콘 박막 트랜지스터 amorphous Silicon Thin Film Transister 를 스위칭 소자로 사용한 컬러 능동 행열 ( Clolor active matrix ) 방식의 TFT 액정 표시 소자 (Liquid Crystal

2SK1363

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Silicon N Channel MOSType ji-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.) • High Forward Transfer Admittance

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2030 Field Effect Transistor Silicon N Channel MOSType c-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - r ds (ON) = 0 .1 0Q (Typ.) • High Forward Transfer Admittance

2SK1913

Contextual Info: TOSHIBA 2SK1913 Field Effect Transistor Silicon N Channel MOS Type rc-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9Q (Typ.) • High Forward Transfer Admittance - 'Yfs = 3.OS (Typ.)

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1529 Field Effect Transistor Silicon N Channel MOSType ji-MOS II High Power Amplifier Application F e a tu re s • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Admittance - |Yfe I = 4.0S (Typ.)

Contextual Info: TOSHIBA 2SK2201 Field Effect Transistor Silicon N Channel MOS Type L2-jt-MOS V High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r DS(ON) = 0.28£2 (Typ.) • High Forward Transfer Admittance - -Yfc- = 3.5S (Typ.)

transister

Abstract: 2SK1363
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Unit in mm Silicon N Channel MOSType ji-MOS II.5 15.8 ±0.5 #3.6 ±0.2 35 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.)

2SK1913

Abstract: BTB 600 BR BTb 600
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9H (Typ.) • High Forward Transfer Admittance

Contextual Info: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode

BC847PN

Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
Contextual Info: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1768 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M OSType I?-7t-MOS III High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r DS(ON) = 0-055£2 (Typ .)

toshiba JD-21TA03

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2078 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r d s (o n >= 1 -0 ^ (Typ.)

2SK2057

Abstract: LDR voltage range
Contextual Info: TOSHIBA 2SK2057 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ‘ ^D S (O N ) = 0.24Q (Typ.) • High Forward Transfer Admittance

2SK1767

Abstract: IC251 transister s2014 2SK1767 transistor
Contextual Info: TOSHIBA 2SK1767 Discrete Semiconductors Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS III.5 10 ± 0.3 High Speed, High Current Switching Applications # 3.2 ± 0.2 2.7 ± 0.2 Features • Low Drain-Source ON Resistance

2SK1365

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type π-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.5Ω (Typ.) • High Forward Transfer Admittance

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1865 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON)= 0.55Q (Typ.) • High Forward Transfer Admittance

t5d diode

Abstract: 2SK2038 transistor 2sk2038 transister SC-65 Diode 400V 5A
Contextual Info: TOSHIBA Discrete Semiconductors 2SK2038 Field Effect Transistor Unit in mm Silicon N Channel M OSType c-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • rds(on>= 1-8ß (Typ.) • High Forward Transfer Admittance