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    MMBT2907ALT1G

    Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
    Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage


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    PDF MMBT2907ALT1 MMBT2907ALT1/D MMBT2907ALT1G data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G

    MMBT2907ALT1G

    Abstract: transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
    Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage


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    PDF MMBT2907ALT1 MMBT2907ALT1/D MMBT2907ALT1G transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    at08a

    Abstract: electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC
    Text: ELECTRONIC BALLASTS, Prepare,y R, J.Haver Motorola Inc. Voltage fed and current fed resonant inverter circuits for fluorescent lamp ballasts are discussed and a design example is presented. ,:!$,. A typical fluorescent lamp is a l-to 2-inch diameter on its


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    PDF 200mA. MJE13002 200kHz 4-15V) 200mA AR1635, at08a electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC

    an5296

    Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
    Text: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


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    PDF CA3146, CA3146A, CA3183, CA3183A 120MHz CA3146A) an5296 CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN

    Sony CXA1191M

    Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
    Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22


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    PDF 0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
    Text: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors


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    PDF CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 120MHz AN5296 Application of the CA3018 Integrated an5296 CA3146 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE

    transisters

    Abstract: 2SA1036K 2SA1577 2SC2411K 2SC4097 Power transisters ScansUX38
    Text: 2SA1036K/2SA1577 h- "7 > v 7s $ /Transistors I fci £ * v \ s - i - M PNP y ' j 3 > Epitaxial Planar PNP Silicon Transisters 4 * ^ / Medi um Power Amp. 2 S A 1036K 2 S A 1577 • i iHI2\i‘;&|I3/'Dimensions Unit : mm) 2SA1577 2S A1036K lc Max.= —500mA


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    PDF 2SA1036K/2SA1577 2SA1036K 2SA1577 500mA 2SC2411K/2SC4097 2SC2411K/ 2SC4097. transisters 2SC2411K 2SC4097 Power transisters ScansUX38

    1036K

    Abstract: No abstract text available
    Text: 2SA1036K/2SA1577 h ~7 > v ^ $ / T ransistors X 2SA 10 3 6 K 2SA 1577 t ° ^ d r V T ^ y i ^ - ^ P N P ' > ' ; = ! > h - 7 > V * * Epitaxial Planar PNP Silicon Transisters • i^ ^ Jti'liffl/M ed iu m Power Amp. W fi \H ±[l./Dim ensions Unit: mm • « *


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    PDF 2SA1036K/2SA1577 1036K --500mA 2SC2411K 1036K

    AN5296 Application of the CA3018 Integrated

    Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
    Text: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max


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    PDF 43DP271 004703S CA3146, CA3183 CA3146A, CA3183A, CA3183* A3146A CA3146 AN5296 Application of the CA3018 Integrated TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY

    smd transistor marking 12W

    Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
    Text: 8. P r e c a u t io n s in H a n d l i n g s urfa c e m o u n t d e v ic e s S M D types of surface m ount transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor’s envelope is com­ parable to those of the TO-236 and SOT-23


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    PDF O-126 O-220 O-236 OT-23 O-220SM O-22QSM T0-220SM smd transistor marking 12W smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor

    Untitled

    Abstract: No abstract text available
    Text: CA3146, CA3146A, CA3183, CA3183A HARRIS S E M I C O N D U C T O R August 1996 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors - V qe M atch. ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


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    PDF CA3146, CA3146A, CA3183, CA3183A 120MHz CA3146A)

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSA4709 SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformer circuit. FEATURES • B Battery feed , S (Supervision), and H


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    PDF MSA4709 MSA4709 -24V/-48V) 150KH IV-D-25 IV-D-26

    NJM062

    Abstract: ic njm4558 pin diagram
    Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060. ic njm4558 pin diagram

    Untitled

    Abstract: No abstract text available
    Text: M3825X Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER The M3825x group is an 8-bit microcomputer de­ signed with MELPS 740 core technology. The microcomputer is equipped with additional functions including an LCD circuit, A-D convertor and UART. The M3825x is available in several configurations


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    PDF M3825X 100pF

    TRANSISTOR 642

    Abstract: ca301b transistor 123 DL CA3018 CA3018A ICAN-5296 529B I426 f425 CA3016
    Text: Arrays E SOLID STATE 01 1 e | 3075001 DGlMSfifl 5 | CA3018, CA3018A General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range features: Matched monolithic general


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    PDF CA3018, CA3018A CA3018) CA3018A CA3018 I4260AI 92CS-M258RI 92CS-IS196 TRANSISTOR 642 ca301b transistor 123 DL ICAN-5296 529B I426 f425 CA3016

    IVD12

    Abstract: PABX current rating MSA4709 IVD10 4w-2w hybrid transister IV-D-20 900J2 DQG7512 FREE transisters
    Text: O K I SEMICONDUCTOR GROUP 23E D • O K I semiconductor MSA4709_ b7 2 4 2 4 0 0007512 _ ' ~r-7s-n-n SUBSCRIBER LINE IN TERFACE CIRCUIT G EN ER A L DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance


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    PDF DQG7512 MSA4709 MSA4709 4700pF 12showsatVBB 150Kil IV-D-25 b724240 g007535 IVD12 PABX current rating IVD10 4w-2w hybrid transister IV-D-20 900J2 DQG7512 FREE transisters

    Untitled

    Abstract: No abstract text available
    Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6


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    PDF DQ114TM

    Untitled

    Abstract: No abstract text available
    Text: Voltage Followers S G 1 0 2 /2 0 2 /3 0 2 SG110/210/310 Th e S G 102/202/302 are high-gain operational am plifiers designed sp ecifically fo r unity-gain non-inverting voltage follow er applications. Th e devices incorporate advanced super-beta transistor processing techniques to


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    PDF SG110/210/310

    NJM062

    Abstract: No abstract text available
    Text: J-fET INPUT O P E R A M M L AMPLIFIER ^ NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which w ere designed as low-power versions of the NJM082. T hey featu re high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060. NJM062/

    Untitled

    Abstract: No abstract text available
    Text: NJM062/064 J-fET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T he N J M 062/064 are J-FET input operational am plifiers w hich were designed as low -p ow er versions o f the N JM 082. They feature high input impedance, w ide bandwidth, high slew rate, and low input


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    PDF NJM062/064 MQ62D KJM82M

    NJM062

    Abstract: No abstract text available
    Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. T hey feature high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060.

    rs flip-flop IC 7400

    Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
    Text: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper­ ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-FET input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060. Input62 NJM062/ 100ffi)