SILICONIX SD21 Search Results

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete

sd5002 siliconix

Contextual Info: SILICONIX INC IflE D •3 T Siliconix X V • Ö5S473S 7 ■ SD5000 SERIES T '- s m i in c o rp o ra te d DGISbMQ N-Channel Lateral DMOS Quad FETs The Siliconix SD5000 Series is a monolithic array of single-pole, single-throw analog switches designed for high speed switching in audio, video ancl

SD5000

Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
Contextual Info: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an

siliconix sd211 de

Contextual Info: jre s s ä SD211 de s e rie s N-Channel Lateral DMOS FETs The SD211DE Series of single-pole, single-throw analog switches is designed for high speed switching in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS

Contextual Info: m SZS S DMCB SERIES DIE N-Channel Lateral DMOS FETs The D M CB Series of single-pole, single-throw analog SD210DE SD214DE video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low capacitance of

SILICONIX SD21

Abstract: TO-206A sd211de
Contextual Info: B & ffA SD21 ODE SERIES N-Channel Lateral DMOS FETs The SD210DE Series of single-pole, single-throw analog switches is designed for high speed switchign in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low

AN301

Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
Contextual Info: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10

Contextual Info: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2

SD214DE

Abstract: sd210de AN502 SD210DE-2 SD214DE-2 SD5000I-2
Contextual Info: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2

SD210DE-2

Abstract: SD210DE AN502 SD214DE-2 SD5000I-2
Contextual Info: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2

J201 Replacement

Abstract: "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C
Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS

smt a1 transistor

Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
Contextual Info: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78

low noise dual P-Channel JFET

Abstract: 2n5019
Contextual Info: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75Ω TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures

SD211DE-2

Abstract: AN502 SD213DE-2 SD214DE-2 SD215DE-2 sd211de
Contextual Info: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2

VCR11N

Abstract: fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511
Contextual Info: VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω 1 ABSOLUTE MAXIMUM RATINGS TO-71 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures

TO72 package n-channel jfet

Abstract: PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500
Contextual Info: PAD SERIES PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE BVR ≥ -30V PAD1,2,5 PAD* Crss ≤ 2.0pF TO-72 BOTTOM VIEW TO-72 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1

SD215DE-2

Abstract: AN502 SD211DE-2 SD213DE SD213DE-2 SD214DE-2 SD214DE
Contextual Info: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2

low noise dual P-Channel JFET

Abstract: transistor TO99 package 2N5116 LS312 equivalent 2N4416 equivalent p-channel dual P-Channel JFET 2n5114 sot23
Contextual Info: 2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature

SD210DE

Abstract: AN301 SD214DE
Contextual Info: SD210DE/214DE Siliconix NĆChannel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 SD214DE, For applications information see AN301, page 33.

SD210 vishay

Abstract: lateral mosfet audio amplifier SD210 datasheet vishay analog switch circuit using mosfet High-Speed Analog N-Channel DMOS FETs -TO-72 mosfet analog switch circuit AN207 CD74HC138 DG271 DG408
Contextual Info: AN207 Vishay Siliconix 12-ns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies The DG611, DG612, and DG613 are extremely low-power, high-speed analog switches designed to optimize circuit performance in high-speed switching applications. Each of

"DUAL N-Channel JFET"

Abstract: ultra low igss pA J176 equivalent
Contextual Info: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

P-Channel MOSFET 12V SOT 23

Abstract: LS-31 ultra FAST DMOS FET Switches jfet to 92
Contextual Info: J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated J SERIES SST SERIES TO-92

SD215DE-2

Abstract: SD215DE vishay
Contextual Info: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMM ARY Part Number V(BH)DS M in (V) v GS(th) Max (V) rDS(on) Max (Q ) Crss Max (pF) SD211DE-2 30 1.5 4 5 V GS= 1 0 V 0.5 2 SD213DE-2

dual P-Channel JFET

Abstract: low noise dual P-Channel JFET SST176 diode dual jfet p-channel monolithic dual jfet transistor
Contextual Info: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS on ≤ 85Ω LOW GATE OPERATING CURRENT ID(off) = 10pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)