1n5551
Abstract: 1n5552
Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency
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1N5550
1N5552
MIL-STD-750,
1N5551
1N5552
18-Jul-08
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BY228
Abstract: No abstract text available
Text: BY228 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
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BY228
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
11-Mar-11
BY228
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BY228-13
Abstract: BY228-15 BY228
Text: BY228-13 , BY228-15 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
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BY228-13
BY228-15
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
11-Mar-11
BY228-13
BY228-15
BY228
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Untitled
Abstract: No abstract text available
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
OD-57
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: BYW178 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Very fast reverse recovery time • Material categorization:
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BYW178
OD-64
MIL-STD-750,
BYW178
BYW178-TR
BYW178-TAP
2011/65/EU
2002/95/EC.
2002/95/EC
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sf5408
Abstract: No abstract text available
Text: SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed axial leaded glass envelope • Low reverse current • High reverse voltage
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SF5400,
SF5401,
SF5402,
SF5403,
SF5404,
SF5405,
SF5406,
SF5407,
SF5408
OD-64
sf5408
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byt62
Abstract: diode sod57 byt62-tr
Text: BYT62 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • Material categorization: For definitions of compliance please see
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BYT62
OD-57
MIL-STD-750,
BYT62
BYT62-TR
BYT62-TAP
25trademarks
2011/65/EU
2002/95/EC.
diode sod57
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BYV27-600
Abstract: No abstract text available
Text: BYV27-600 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed axial-leaded glass envelope • Low reverse current • Ultra fast soft recovery switching • Material categorization:
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BYV27-600
OD-57
MIL-STD-750,
BYV27-600
BYV27-600-TR
BYV27-600-TAP
2011/65/EU
2002/95/EC.
2002/95/EC
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DO-204AP
Abstract: GI1001 GI1002 GI1003 GI1004
Text: GI1001 / 1002 / 1003 / 1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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GI1001
DO-204AP
MIL-STD-750,
GI1001
GI1002
GI1003
08-Apr-05
GI1002
GI1003
GI1004
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BYW74
Abstract: BYW76TAP BYW75 1000VRRM byw76
Text: BYW72, BYW73, BYW74, BYW75, BYW76 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization:
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BYW72,
BYW73,
BYW74,
BYW75,
BYW76
OD-64
MIL-STD-750,
BYW72
BYW73
BYW74
BYW76TAP
BYW75
1000VRRM
byw76
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Untitled
Abstract: No abstract text available
Text: FE5A / 5B / 5C / 5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in
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BYT53A,
BYT53B,
BYT53C,
BYT53D,
BYT53F,
BYT53G
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
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BYW36
Abstract: No abstract text available
Text: BYW32, BYW33, BYW34, BYW35, BYW36 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in
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BYW32,
BYW33,
BYW34,
BYW35,
BYW36
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYW32
BYW36
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sf5408
Abstract: No abstract text available
Text: SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed axial leaded glass envelope • Low reverse current • High reverse voltage
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SF5400,
SF5401,
SF5402,
SF5403,
SF5404,
SF5405,
SF5406,
SF5407,
SF5408
2002/95/EC
sf5408
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1N5062 diode
Abstract: 1N5060 1N5061 1N5061 vishay
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
1N5060
1N5062 diode
1N5061 vishay
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Untitled
Abstract: No abstract text available
Text: 1N5417, 1N5418 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Low forward voltage drop • High pulse current capability
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1N5417,
1N5418
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
1N5417
1N5418
OD-64any
18-Jul-08
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S413
Abstract: No abstract text available
Text: S413D Vishay Semiconductors Fast Soft Recovery Avalanche Sinterglass Diode Description Polarity: Cathode indicated by a band Features • • • • • • Hermetically sealed glass envelope Glass passivated e2 Low reverse current Miniature axial leaded
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S413D
2002/95/EC
2002/96/EC
S413D
DOT-30B
08-Apr-05
S413
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Untitled
Abstract: No abstract text available
Text: BYV28-600 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically envelope sealed axial-leaded glass • Low reverse current • Ultra fast soft recovery switching • Compliant to RoHS directive 2002/95/EC and in
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BYV28-600
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-600
OD-64
18-Jul-08
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BYT56J
Abstract: byt56k diode DIODE WITH SOD CASE diode SOD 64
Text: BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in
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BYT56A,
BYT56B,
BYT56D,
BYT56G,
BYT56J,
BYT56K,
BYT56M
2002/95/EC
2002/96/EC
OD-64
BYT56J
byt56k diode
DIODE WITH SOD CASE
diode SOD 64
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Untitled
Abstract: No abstract text available
Text: SF4001, SF4002, SF4003, SF4004, SF4005, SF4006, SF4007 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed axial leaded glass envelope • Low reverse current • High reverse voltage • Compliant to RoHS directive 2002/95/EC and in
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SF4001,
SF4002,
SF4003,
SF4004,
SF4005,
SF4006,
SF4007
2002/95/EC
2002/96/EC
OD-57
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BYV27-200
Abstract: BYV27-50 BYV27-100 BYV27-150 BYV27 BYV-27-100
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV27-50
BYV27-100
BYV27-200
BYV27-150
BYV27
BYV-27-100
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rg2m
Abstract: No abstract text available
Text: RG2A to RG2M VISHAY Vishay Semiconductors Fast Sinterglass Switching Rectifier Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway
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MIL-S-19500
DO-204AP
08-Apr-05
rg2m
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BYV95C
Abstract: BYV95A BYV96D BYV95B BYV96E
Text: BYV95A / 95B / 95C / 96D / 96E Vishay Semiconductors Fast Sinterglass Switching Rectifier Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.5 Ampere operation at Tamb = 55 °C with no thermal runaway
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BYV95A
MIL-S-19500
BYV95B
DO-204AP
18-Jul-08
BYV95C
BYV96D
BYV96E
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aeg rectifier
Abstract: TELEFUNKEN BYW-56 BYW 56 V aeg telefunken
Text: 0029426 A E G CQRP ' ' " Al DE | D D S^ ilg k □□□5bHfl M f~ ' f - Q / _ ¿jy Sinterglass Rectifiers In addition to the switching transistor, every high voltage converter circuit needs a variety of fast, and standard-recovery rectifier diodes for the various commutation, level shifting,
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