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    Vishay Siliconix SIR450DP-T1-RE3

    N-CHANNEL 45 V (D-S) MOSFET POWE
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    DigiKey SIR450DP-T1-RE3 Cut Tape 5,629 1
    • 1 $2.1
    • 10 $1.343
    • 100 $2.1
    • 1000 $0.66424
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    SIR450DP-T1-RE3 Digi-Reel 5,629 1
    • 1 $2.1
    • 10 $1.343
    • 100 $2.1
    • 1000 $0.66424
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    SIR450DP-T1-RE3 Reel 3,000 3,000
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    Vishay Intertechnologies SIR450DP-T1-RE3

    Transistor MOSFET N-CH 45V 91A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR450DP-T1-RE3)
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    Avnet Americas SIR450DP-T1-RE3 Reel 27 Weeks 6,000
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    Mouser Electronics SIR450DP-T1-RE3 2,970
    • 1 $2.09
    • 10 $1.34
    • 100 $0.898
    • 1000 $0.652
    • 10000 $0.561
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    Newark SIR450DP-T1-RE3 Cut Tape 4,965 1
    • 1 $1.43
    • 10 $1.43
    • 100 $0.94
    • 1000 $0.577
    • 10000 $0.504
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    Bristol Electronics SIR450DP-T1-RE3 2,104
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    TTI SIR450DP-T1-RE3 Reel 6,000
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    EBV Elektronik SIR450DP-T1-RE3 28 Weeks 3,000
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    SIR450DP Datasheets (1)

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    SIR450DP-T1-RE3 Vishay Siliconix N-CHANNEL 45 V (D-S) MOSFET POWE Original PDF

    SIR450DP Datasheets Context Search

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    C 4927

    Abstract: 9434 AN609
    Text: SiR450DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    SiR450DP AN609, 19-Sep-08 C 4927 9434 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR450DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR450DP 18-Jul-08 PDF