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Vishay Siliconix SIR642DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 |
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SIR642DP-T1-GE3 | Cut Tape |
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SIR642 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SIR642DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A 8SOIC | Original | 9 |
SIR642 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see |
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SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiR642DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR642DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiR642DP
Abstract: SIR642
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SiR642DP SiR642DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR642 | |
Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see |
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SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIR822Contextual Info: SIR 10 Series 93 94 72 71 52 51 32 31 12 11 A1 20 2,9 0,3 32 A1 0,5 0,4 1 25,4 5 7,5 5 7,5 5 7,5 5 7,5 5 3,1 3,75 12,5 3,75 3,75 2 3,75 12,5 Ø 1,3 2 [mm] 25,4 5 7,5 5 7,5 5 7,5 5 7,5 5 3,1 Contacts Data Contact material AgSnO2 + 0,2 µm Au Type of contact |
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SIS212 24VDC
Abstract: SIR312 ELESTA relays SIR512 e113714 SIM112 24VDC SIR642 SIS212 ELESTA SIR822
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D-63500 D-04683 SIS212 24VDC SIR312 ELESTA relays SIR512 e113714 SIM112 24VDC SIR642 SIS212 ELESTA SIR822 | |
SLR312
Abstract: ELESTA CONTROLS SIS212 24VDC SIF422 IEC 60947-5-1 400v ac15 SIR512 SGR282Z 16A 250VAC relays smd elesta relays sis212 SRD-SIM4
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wCH-7310 D-63500 D-04683 SLR312 ELESTA CONTROLS SIS212 24VDC SIF422 IEC 60947-5-1 400v ac15 SIR512 SGR282Z 16A 250VAC relays smd elesta relays sis212 SRD-SIM4 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Contextual Info: Product Catalogue Relays with forcibly guided contacts Product Catalogue - Relays with forcibly guided contacts Edition 12/2014 Publisher: ELESTA GmbH, Bad Ragaz, Switzerland All rights reserved. This work and its parts are protected by copyright. Any use in other than legally authorized cases requires the prior written consent of the publisher. |
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CH-7310 D-04683 D-71672 | |
SIR552
Abstract: SIR462 SIR732 SIR642 SIR822 SIR372 SIR912 ELESTA 24VAC-15 500VA
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SIR372 SIR462 SIR552 SIR642 SIR732 SIR822 SIR912 SIR462 SIR642 SIR552 SIR732 SIR372 SIR912 ELESTA 24VAC-15 500VA | |
Contextual Info: XR75100 40V Synchronous Step Down COT Controller FEATURES General Description 20A Capable Step Down Controller Wide 5.5V to 40V Input Voltage Range Integrated High Current 2A/3A Drivers 0.6 to 30V Adjustable Output Voltage Proprietary Constant On-Time Control |
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XR75100 200ns 100kHz 800kHz 16-pin XR75100 com/XR75100 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs |
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O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN | |
EN50205Contextual Info: Produktkatalog Relais mit zwangsgeführten Kontakten Produktkatalog - Relais mit zwangsgeführten Kontakten Auflage 12/2014 Herausgeber: ELESTA GmbH, Bad Ragaz, Schweiz Alle Rechte vorbehalten. Das Werk und seine Teile sind urheberrechtlich geschützt. Jede Verwertung in anderen als den gesetzlich zugelassenen Fällen bedarf deshalb der vorherigen |
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CH-7310 D-04683 D-71672 EN50205 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |