SIRA18ADP Search Results
SIRA18ADP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIRA18ADP-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30.6A POWERPAKSO | Original | 385.06KB |
SIRA18ADP Price and Stock
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Vishay Siliconix SIRA18ADP-T1-GE3MOSFET N-CH 30V 30.6A PPAK SO-8 |
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SIRA18ADP-T1-GE3 | Digi-Reel | 27,538 | 1 |
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SIRA18ADP-T1-GE3 | 27,000 | 1 |
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Vishay Intertechnologies SIRA18ADP-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA18ADP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA18ADP-T1-GE3 | Reel | 6,000 | 16 Weeks | 3,000 |
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SIRA18ADP-T1-GE3 | 60,257 |
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SIRA18ADP-T1-GE3 | Cut Tape | 9,835 | 5 |
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SIRA18ADP-T1-GE3 | 128 |
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SIRA18ADP-T1-GE3 | Reel | 42,000 | 3,000 |
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SIRA18ADP-T1-GE3 | 2,974 | 3 |
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SIRA18ADP-T1-GE3 | 18 Weeks | 6,000 |
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SIRA18ADP-T1-GE3 | 17 Weeks | 3,000 |
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SIRA18ADP-T1-GE3 | 15,183 |
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Vishay BLH SIRA18ADP-T1-GE3 |
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SIRA18ADP-T1-GE3 | 160 | 9 |
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SIRA18ADP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiRA18ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a 0.0087 at VGS = 10 V 30.6 0.0135 at VGS = 4.5 V 24.5 Qg (TYP.) 6.9 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization: |
Original |
SiRA18ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiRA18ADP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiRA18ADP AN609, 1686m 2901u 8983m 9168m 5264m 7061m 9900m 03-Feb-15 |