SIS990DN Search Results

Contextual Info: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SPICE Device Model SiS990DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in