SKM150GAL Search Results
SKM150GAL Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SKM150GAL123D |
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SEMITRANS M - IGBT Module | Original | 1.7MB | 6 | ||
SKM150GAL123D |
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SEMITRANS IGBT Modules New Range | Scan | 108.22KB | 1 |
SKM150GAL Price and Stock
SEMIKRON SKM150GAL12VTransistor; Continuous Collector Current:225A; Collector Emitter Saturation Voltage:1.2Kv; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:940Mv; Product Range:- Rohs Compliant: Yes |Semikron SKM150GAL12V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SKM150GAL12V | Bulk | 8 |
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SKM150GAL12V | Bulk | 1 |
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SEMIKRON SKM150GAL12T4Igbt Array & Module Transistor, Npn, 232 A, 1.8 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM150GAL12T4 |
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SKM150GAL12T4 | Bulk | 1 |
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SKM150GAL12T4 | Bulk | 1 |
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SKM150GAL12T4 | 1 |
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SEMIKRON SKM150GAL12T4 22892300Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw |
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SKM150GAL12T4 22892300 | 43 | 1 |
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SEMIKRON SKM150GAL12F4G 22896150Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw |
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SKM150GAL12F4G 22896150 | 1 |
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SEMIKRON SKM150GAL12V 22892301Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw |
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SKM150GAL12V 22892301 | 1 |
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SKM150GAL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SKM150GAL12V
Abstract: semikron* SKM150GAL12V C-388 SKM150GAL1
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SKM150GAL12V SKM150GAL12V semikron* SKM150GAL12V C-388 SKM150GAL1 | |
SKM150GAL12VContextual Info: SKM150GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 225 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMITRANS 2 ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C |
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SKM150GAL12V SKM150GAL12V | |
Contextual Info: SKM150GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C |
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SKM150GAL12T4 | |
SKM150GAL12T4
Abstract: Ic C 141 IGBT4 SKM150GAL SKM150GAL12T switched reluctance motor IGBT for switched reluctance motor
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SKM150GAL12T4 SKM150GAL12T4 Ic C 141 IGBT4 SKM150GAL SKM150GAL12T switched reluctance motor IGBT for switched reluctance motor | |
Contextual Info: SKM150GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 225 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMITRANS 2 ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 |
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SKM150GAL12V | |
Contextual Info: SKM150GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMITRANS 2 ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C |
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SKM150GAL12V | |
Contextual Info: SKM150GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM150GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM150GAL12T4 | |
IGBT for switched reluctance motorContextual Info: SKM150GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM150GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM150GAL12T4 SKM150GAL12T4 IGBT for switched reluctance motor | |
FUJI IGBTContextual Info: SKM150GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMITRANS 2 VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V 450 A -20 . 20 |
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SKM150GAL12V SKM150GAL12V FUJI IGBT | |
SKM150GAL12T4
Abstract: IGBT for switched reluctance motor switched reluctance motor IGBT SKM150GAL1
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SKM150GAL12T4 SKM150GAL12T4 IGBT for switched reluctance motor switched reluctance motor IGBT SKM150GAL1 | |
Contextual Info: SKM150GAL121D Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V)20 I(C) Max. (A)100 Absolute Max. Power Diss. (W)1.0k Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case.13 |
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SKM150GAL121D | |
Contextual Info: SKHI 10/12 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& h1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >a H B&* a H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4Be_N I1()-/1+ )4%//)+ ,1(/B') ;)&;) |
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HM789 -145B/ | |
circuit diagram for igbt driver
Abstract: molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER
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200V-IGBT) circuit diagram for igbt driver molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l | |
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Contextual Info: SKHI 10/17 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& i1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >b H B&* b H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4BgaN I1()-/1+ )4%//)+ ,1(/B') ;)&;) |
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HM789 -145B/ | |
SKM200GAR122DContextual Info: s e MIKRO n Cases D 27 / D 38 SEMITRANS 2 Cases D 34 / D 54 C = 3; E = 1 Section 6: SEMITRANS® IGBT Modules Type Vces • discontinued during 1995 VcEsat Pwi @ @ 2 5 °C lc Tease -2 5 "C IG B T -2 5 °C V W [ C /W r e p la c e d b y '. . . l 2 3 D " o r " . . . 1 6 3 D '\ s e e p a g e 8 |
OCR Scan |
50GA121D 75GA161D SKM100GA121D SKM100GA161D SKM200GA1020 SKM30CG SKM200GB162D 22GD101D 40GD101D SKHI21, SKM200GAR122D | |
123D TRANSISTOR
Abstract: Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10
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SKHI10 123D TRANSISTOR Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10 | |
123d transistor
Abstract: SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron
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SKHI10 123d transistor SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron |