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SEMIKRON


SEMIKRON SKM300GB12E4 Igbt Module, Dual, 1.2Kv, 422A; Continuous Collector Current:422A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SKM300GB12E4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SKM300GB12E4	Bulk			12	1 - 10 $208.60 100 $196.60 1000 $196.60 10000 $196.60	Buy Now
RS	SKM300GB12E4	Bulk			1	1 $257.27 10 $228.97 100 $228.97 1000 $228.97 10000 $228.97	Get Quote
Vyrian	SKM300GB12E4		668			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SKM300GB12E4 22892077 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SKM300GB12E4 22892077				1	1 $280.07 10 $247.24 100 $222.62 1000 $222.62 10000 $222.62	Get Quote

SKM300GB12E4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SKM300GB12E4 Abstract: skm300gb12e skm300gb SKM300GB-12E4 Contextual Info: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A	Original	SKM300GB12E4 SKM300GB12E4 skm300gb12e skm300gb SKM300GB-12E4	PDF
Contextual Info: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A	Original	SKM300GB12E4 CAL009	PDF
Contextual Info: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM300GB12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V	Original	SKM300GB12E4	PDF
Contextual Info: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A	Original	SKM300GB12E4 switc009	PDF
453gb12e4s Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1	Original	AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c	PDF