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    SKW20N60 Search Results

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    SKW20N60 Price and Stock

    Rochester Electronics LLC SKW20N60FKSA1

    IGBT NPT 600V 40A TO247-3
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    DigiKey SKW20N60FKSA1 Tube 121
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    Infineon Technologies AG SKW20N60FKSA1

    IGBT 600V 40A 179W TO247-3
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    Verical SKW20N60FKSA1 2,540 134
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    SKW20N60FKSA1 380 134
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    Rochester Electronics SKW20N60FKSA1 2,970 1
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    Infineon Technologies AG SKW20N60HSFKSA1

    IGBT 600V 36A 178W TO247-3
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    Verical SKW20N60HSFKSA1 4,040 134
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    SKW20N60HSFKSA1 2,400 134
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    Rochester Electronics SKW20N60HSFKSA1 6,440 1
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    Rochester Electronics LLC SKW20N60HSFKSA1

    IGBT NPT 600V 36A TO247-3
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    DigiKey SKW20N60HSFKSA1 Tube 121
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    SKW20N60 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKW20N60 Infineon Technologies Fast IBGT in NPT Technology with soft, fast recovery anti-parallel EmCon Diode Original PDF
    SKW20N60 Infineon Technologies 20A 600V TO247AC IGBT+Diode Original PDF
    SKW20N60FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 40A 179W TO247-3 Original PDF
    SKW20N60HS Infineon Technologies High Speed IGBT in NPT-Technology Original PDF
    SKW20N60HS Infineon Technologies 20A 600V TO247 IGBT+Diode Original PDF
    SKW20N60HSFKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 36A 178W TO247-3 Original PDF

    SKW20N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGP20N60HS

    Abstract: SGW20N60HS SKP20N60HS SKW20N60HS IGBT FF 450
    Text: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:


    Original
    PDF SKP20N60HS SKW20N60HS P-TO-220-3-1 O-220AB) P-TO-247-3-1 O-247AC) SGP20N60HS O220AB Q67040-S4498 SGW20N60HS SGP20N60HS SGW20N60HS SKP20N60HS SKW20N60HS IGBT FF 450

    k20N60hs

    Abstract: k20n60
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs k20n60

    SKW20N60HS

    Abstract: No abstract text available
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKW20N60HS P-TO-247-3-1 O-247AC) O-247AC Q67040-S4502 Aug-02 SKW20N60HS

    k20n60

    Abstract: No abstract text available
    Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    PDF SKW20N60 SKW20N60 k20n60

    SKW20N60

    Abstract: Q67040-S4242 SGP20N60
    Text: Preliminary IGBT same as SGP20N60 SKW20N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original
    PDF SGP20N60 SKW20N60 O-247AC Q67040-S4242 Aug-99 SKW20N60 Q67040-S4242 SGP20N60

    Q67040-S4242

    Abstract: SKW20N60 IGBT 100W 24V 5A
    Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter


    Original
    PDF SKW20N60 P-TO-247-3-1 O-247AC) O-247AC Q67040-S4242 Jul-02 Q67040-S4242 SKW20N60 IGBT 100W 24V 5A

    SKW20N60

    Abstract: Q67040-S4242
    Text: SKW20N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    PDF SKW20N60 O-247AC Q67040-S4242 Mar-00 SKW20N60 Q67040-S4242

    Diode 400V 20A

    Abstract: SKW20N60HS
    Text: Preliminary Datasheet SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 12 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability - very tight parameter distribution


    Original
    PDF SKW20N60HS O-247AC Q67040-S4242-A001 Sep-01 Diode 400V 20A SKW20N60HS

    k20n60

    Abstract: SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A
    Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    PDF SKW20N60 PG-TO-247-3 k20n60 SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A

    k20n60

    Abstract: k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS
    Text: SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKW20N60HS PG-TO-247-3 K20N60HS k20n60 k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS

    SKW20N60

    Abstract: No abstract text available
    Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter


    Original
    PDF SKW20N60 SKW20N60 O-247AC Q67040-S4242 Dec-01

    g20n60hs

    Abstract: No abstract text available
    Text: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:


    Original
    PDF SKP20N60HS SKW20N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) G20N60HS

    k20N60hs

    Abstract: K20N60 power Diode 400V 20A
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs K20N60 power Diode 400V 20A

    Untitled

    Abstract: No abstract text available
    Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls


    Original
    PDF SKW20N60

    k20n60

    Abstract: igbt 400V 20A
    Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    PDF SKW20N60 SKW20N60 k20n60 igbt 400V 20A

    k20N60hs

    Abstract: k20n60
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60

    k20N60hs

    Abstract: k20n60
    Text: SKW20N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKW20N60HS SKW20N60HS O-247AC Q67040-S4502 Jan-02

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


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    PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


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    PDF B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60

    Electric Welding Machine diagram

    Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS
    Text: High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : The key component for power Electronic applications – the power switch - is still a semiconductor


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    PDF 10kHz O-247 TC100 O-220 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS