SL 100 TRANSISTOR Search Results

SPP70N05L

Abstract: Q67040-S4000-A2 sl diode
Contextual Info: BUZ 100 SL Preliminary data SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 SL

C2100

Abstract: SL-7-C2100
Contextual Info: ET S - SL-5-C2100-/ / SL-7-C2100 * y Dual 100-Bit Static Shift Registers FEATURES • ■ ■ ■ ■ ■ T T L/D T L C om patible C lock in p u t T T L/D T L C om patible Data— N o external interfa cin g com ponents required on data inputs o r outputs.

BC337 BC547

Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Contextual Info: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150

SPP70N05L

Abstract: Q67040-S4000-A2
Contextual Info: BUZ 100 SL SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

BUZ100

Abstract: smd diode code A Q67040-S4000-A2 SPP70N05L
Contextual Info: BUZ 100 SL SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

ltaft

Contextual Info: 1DI75F-100 75a : Outil ne Drawings POWER TRAN SISTO R MODULE • Features • ¡SW7± High Voltage • 7 U —+"<ij KrtiSE • ASO ^/SL' • ifeiffl? Including Free W heeling Diode Excellent Safe Operating Area Insulated Type - % IA M H N o . l l D e q u i » « l |

131S

Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418
Contextual Info: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

BLV101A

Abstract: BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Line-ups INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas.

MDA380

Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

122d

Abstract: BLU98 ON4612 sot37 172d BLV100
Contextual Info: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7

Diode sl

Abstract: Q67040-S4012-A2 SPP20N05L 450uH
Contextual Info: BUZ 101 SL Preliminary data SPP20N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 101 SL

transistor buz 350

Abstract: Q67040-S4004-A2
Contextual Info: BUZ 110 SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

Q67040-S4006-A2

Abstract: SPP13N05L spp13n
Contextual Info: BUZ 104 SL Preliminary data SPP13N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 104 SL

Q67040-S4004-A2

Abstract: 110SL transistor buz 19 transistor buz 350 Semiconductor Group 1997
Contextual Info: BUZ 110 SL Preliminary data SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 110 SL

Q67040-S4008-A2

Abstract: SPP28N05L Transistor Data sl 103
Contextual Info: BUZ 103 SL Preliminary data SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 SL

Q67040-S4008-A2

Abstract: SPP28N05L EAS120
Contextual Info: BUZ 103 SL SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

SPP47N05L

Abstract: Q67040-S4010-A2 buz102sl
Contextual Info: BUZ 102 SL Preliminary data SPP47N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 102 SL

Q67040-S4012-A2

Abstract: SPP20N05L sl diode
Contextual Info: BUZ 101 SL SPP20N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

Contextual Info: AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Lead-Free, RoHS Compliant

AUIRG4BC30S

Abstract: AUIRG4BC30
Contextual Info: AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Lead-Free, RoHS Compliant

Q67040-S4006-A2

Abstract: SPP13N05L
Contextual Info: BUZ 104 SL SPP13N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

Contextual Info: PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package