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    BSD113Q Search Results

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    BC337 BC547

    Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
    Text: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150


    OCR Scan     		PDF bSD113Q 2N4032 2N6554 BT2907A PN2907A PN3645 PN4249 PN4250A PN4355 TN2905A BC337 BC547 BC182 BC547 BC547 surface mount T0-92 TN2905A BC237 2n5962

    NDB406B

    Abstract: NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL NDB610AEL NDB610AL NDB610BEL NDB610BL
    Text: _ . m bfiE D Power M O S F E T S continued bSD113Q 23b M N S C S TO-263AB Logic Level DMOS NATL SEMICOND (DISCRETE) N Channel N Channel r DS(OB)@ lo ^ B S (Volts) Min 100 Device Po b (Amps) (Watts) (mfì) (Amps/Volts) Max Max Max NDB710AEL 38 21/5 42 42


    OCR Scan     		PDF bSD113D O-263AB NDB710AEL NDB710AL NDB710BEL NDB710BL NDB610AEL NDB610AL NDB610BEL NDB610BL NDB406B NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL

    NDP603al

    Abstract: NDB603AL Transistor TO220 814
    Text: National f i Semiconductor' January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP603AL NDB603AL 0DHG22G NDB603AL Transistor TO220 814

    BD371C-10

    Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
    Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o


    OCR Scan     		PDF b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6

    N7000

    Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
    Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been


    OCR Scan     		PDF 2N7000/2N7002/NDF7000A/NDS7002A 81-043-299-240B bSD1130 N7000 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm

    Untitled

    Abstract: No abstract text available
    Text: NATL SEMICOND {DISCRETE} 65 0 1130 N A T L S E M I C O N D , 2T 0 . Sfi D E | t.S Dl 130 0035b0h DISCRETE 28C 35605 D r- National Semiconductor * o fiC NR041(NPN) low-level signal switching transistor features | "\ | p a c k a g e an d lead c o d in g • 40mV guaranteed V c e (sat) characteristics at


    OCR Scan     		PDF 0035b0h NR041

    NDT014

    Abstract: lc 501130
    Text: National June 1996 Semiconductor" NDT014 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancem ent m o d e pow er field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDT014 bS0113D GDMDD73 b50113D NDT014 lc 501130

    BC338 hie hre hfe

    Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
    Text: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92


    OCR Scan     		PDF b501130 bS01130 T-03-01 BC338 hie hre hfe BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055

    25CC

    Abstract: NPDS5911 NPDS5912
    Text: NPDS5911 I NPDS5912 Discrete POWER & Signal Technologies National e * Semiconductor" NPD S5911 N PD S5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* ta=25°cunie«otherwisenoted Parameter Symbol Value Units


    OCR Scan     		PDF NPDS5911 NPDS5912 V00-1BV: bS0113D 25CC NPDS5912

    55b6

    Abstract: NDC631N
    Text: National J u ly 1 9 9 6 Semiconductor NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 4.1 A, 20 V. R ^ , = 0.06 Cl @ V GS = 4.5 V Rds,on, = 0.0 75 Cl @ V GS =2.7 V. These N-Channel lo g ic level enhancem ent m ode


    OCR Scan     		PDF NDC631N 55b6 NDC631N