SM 17 35 TC Search Results

TGA4040

Abstract: TGA4031-SM 5V amplifier
Contextual Info: Not Recommended for New Designs Advance Product Information December 11, 2006 17 - 35GHz MPA/Multiplier TGA4040SM TriQuint Recommends the TGA4030-SM or TGA4031-SM be used for New Designs Key Features • • • • • • Frequency: 17 - 35 GHz 22 dB Nominal Gain @ Mid-band

1092-01A-5

Abstract: VG-12 1092-01A5 Rogers 4350
Contextual Info: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • Measured Performance 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range.

1092-01a-5

Abstract: 5V712
Contextual Info: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • 28 dBm Output Psat, 26 dBm P1dB, typical. • 35 dBm Output TOI. • 17 dB Typical Gain. • Integrated power detection with 30 dB dynamic range. • High ESD tolerance.

1092-01a-5

Abstract: 5V712
Contextual Info: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range. • High ESD tolerance.

1092-01a-5

Abstract: 5V712
Contextual Info: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range. • High ESD tolerance.

1092-01A-5

Contextual Info: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • 28 dBm Output Psat, 26 dBm P1dB, typical. • 35 dBm Output TOI. • 17 dB Typical Gain. • Integrated power detection with 30 dB dynamic range. • High ESD tolerance.

Contextual Info: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range. • High ESD tolerance.

GRP1555C1H101JD01E

Contextual Info: Advance Product Information May 16, 2006 17 - 35GHz MPA/Multiplier TGA4040-SM Key Features • • • • • Frequency: 17 - 35 GHz 20 dB Nominal Gain @ Mid-band 18 dBm Nominal Output P1dB 2x and 3x Multiplier Function Package Dimensions: 5.0 x 5.0 x 1.1 mm

Contextual Info: a WS128K32-XXX WHITE MICROELECTRONICS 128Kx32 SRAM M ODULE, SM D 5962-93187 & 5962-95595 FEATURES • Access Tim es of 15, 17, 20, 25, 35, 45, 55ns Commercial, Industrial and M ilita ry T em perature Ranges ■ MIL-STD-883 Compliant Devices A vaila b le 5 Vo lt Power Supply

FS30ASH03

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics

J20S

Abstract: SM5828P 5828B
Contextual Info: fUPC SM5828B 8-bit Advanced Shift Register NIPPON PRECISION CfRCWTS INC. • OVERVIEW The SM5828B is a varia&le-length 8-bit shift register fabricated using NPC's original molybdenum-gate CMOS technology. The external input pins of the TC allow 1 to 128-step shift register settings. The

fs10smj-2

Abstract: FS30UMJ-3 FS30KMJ3
Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O r t F O IT T I Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C

T70 N03 412

Abstract: FS70SM FS10UM-2
Contextual Info: S h o r t F o rm D 3 t3 Powerex, Inc., 200 H lllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C

RM2507M

Contextual Info: BRIDGE RECTIFIERS » Ä Ä iä L S PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE RANGE : -55 °C to + 1 7 5 ”C jjiiu&friftlgSit._ TYPE M axim um Average Rectified Current @ Half W ave Resistive Load 60Hz lo@ Tc Maxim um Peak

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

Contextual Info: TOSHIBA TENTATIVE TC58128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) b it N A N D E le c tric a lly Erasab le and

13FLP

Abstract: sj22 serie 2sk
Contextual Info: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6

db3 c502

Abstract: st DB3 C502 8570A
Contextual Info: COMMUNICATION CONTROLLER TC8570AP/AF Universal Asynchronous R/T 1. GENERAL DESCRIPTION In m icro-peripherals, ¡8251 is one of the se ria l com m unication L S I which h ave a function of the U A R T. To accom plish the com m unication w ith telephone line, other circu its are needed. T h ese are baudgen erato r which gen erato r which ge n e rate s clock sig n al for com m unication ra te called baud-rate,

THD 0207

Contextual Info: TO SH IBA TC9293AF/AFN/AN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9293AF, TC9293AFN, TC9293AN 2 A MODULATION SYSTEM DA CONVERTER WITH ANALOG FILTER TC9293AF, TC9293AFN, TC9293AN are a 2'nd order 2-4 modulation system 1-bit DA converter with a built-in 8

AL14L4

Contextual Info: Sm all 2 0 S e rie s 10H 8, 12H 6, 14H 4, 16H 2, 1 6 C 1 , 1 0 L 8 , 1 2 L 6 , 1 4 L 4 , 1 6 L 2 Small 20 Series STANDARD INPUTS P AL10H 8 P AL12H 6 P AL14H 4 P AL16H 2 PAL16C1 PAL10L8 PAL12L6 P AL14L4 P AL16L2 10 12 14 16 16 10 12 14 16 OUTPUTS POLARITY 8

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

Contextual Info: DS2143/DS2143Q DALLAS SEMICONDUCTOR FEATURES • E1/ISDN-PRI framing transceiver • Frames to CAS, CCS, and CRC4 formats • Parallel Control Port • Onboard two frame elastic store slip buffer D S 2 1 4 3 /D S 2 1 4 3 Q E1 C ontroller PIN ASSIGNMENT TCLK c 1

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Contextual Info: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21