SM 58 B TRANSISTORS Search Results

SM 58 B TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

SM 58 B TRANSISTORS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AT-60500 Abstract: AT-01635 AT-21400 AT21400 AT-60586 Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0	OCR Scan	AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT21400 AT-60586	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
2N3583 Abstract: 2N4240 2N36 2N35 Contextual Info: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits	OCR Scan	2N3583 2N3584* 2N3585* 2N4240 100-percent 2N3583, 2N4240 2N36 2N35	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Green L i n e ' MGSF3442XT1 Preliminary Information Motorola P referred Device Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N -C H A N N EL E N HA N C EM EN T-M O D E TM O S MOSFET rDS(on) = 58 m£i (TYP)	OCR Scan	MGSF3442XT1 10Vdc, b3b7255 00T3b3D	PDF
2N6758 Abstract: 6757 Contextual Info: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	2N6758 1L-S-19500/542A 2N6758 6757	PDF
NE98203 Abstract: 2SC1662 NE98200 NE98208 2SC1660 NE98241 S21E Contextual Info: NEC/ CALIFORNIA 5bE D b427414 GODESSE =Î43 « N E C C - T -3 1 -Z NEC NE98200 NE98203 NE98208 NE98241 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • W ID E D Y N A M IC R A N G E The N E982 series of N PN silicon transistors features a high	OCR Scan	NE98200 NE98203 NE98208 NE98241 NE982 transis24 2SC1662 2SC1660 NE98241 S21E	PDF
DIODE BUZ Abstract: sis 661 Contextual Info: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V	OCR Scan	C67078-S3120-A2 C67078-S3120-A DIODE BUZ sis 661	PDF
2N2218 Abstract: 386 amplifier Contextual Info: 2N2218 NPN Small Signal General Purpose Amplifier & Switch. 3.86 Tr. 1 of 2 Home Part Number: 2N2218 Online Store 2N2218 Diodes NPN Sm all Signal G eneral Purpo s e Am plifier & Sw it ch. Transistors	Original	2N2218 com/2n2218 2N2218 386 amplifier	PDF
MA-406 8.0000M-C3 Contextual Info: ill ÆSj ra?MrtriL V u.Ajm-mm S micmsemj Comm erce Drive s r s s s ^ 18936-1013 s o i 332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL HtGH FT • ■5,5 GHï VfcHY LOW NCISfc ALL GOLD ME': ALLI2E0 HERMETIC PACKAGE PâN CONNECTIONS DESCRIPTION Ttw SOI 332 is an all gold met&iltefid NPN silicon	OCR Scan		PDF
2SC3584 Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583 Contextual Info: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for	OCR Scan	OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583	PDF
2N6839 Contextual Info: HEWLETT-PACKARD i CMPNTS 2GE D □ 4447534 0G0SS3S 3 E3 *31 H E W L E T T PACKARD 1:rJl 3 1 -2 -3 T'3 3-Ö S' L inear P ow er Transistors HXTR-3002 Chip Technical Data HXTR-3102, TX and TXV 2N6839 HXTR-3104, TX	OCR Scan	HXTR-3002 HXTR-3102, 2N6839 HXTR-3104, 1SalE12i MIL-S-19500, MIL-STD-750 2N6839	PDF
MHW5342A Contextual Info: MOTOROU. Order this document bv MHW5342ND SEMICONDUCTOR TECHNICAL DATA I I The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion-imptanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization	Original	MHW5342ND MHW5342A MHW5342AID MHW5342A	PDF
BUZ 140 L Contextual Info: SIEMENS SIPMOS Power MOS Transistors VDS /q ^D S o n • • • • BUZ 16 BUZ 346 BUZ 346 S2 = 50 . . . 60 V = 48 . . . 58 A = 0.018 Q T O -2 04 AE (BUZ 16) N channel E nhancem ent mode A valanche-proof Packages: TO -204A E (TO-3) T O -2 18 A A (T O P -3)1)	OCR Scan	-204A 7078-A 020-A 31-A2 BUZ 140 L	PDF
MMBR911L Abstract: MPS911 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M PS911 M M B R 911L NPN Silicon High Frequency Transistors . . d e sig ned for lo w noise, w id e d y n a m ic ran g e front-end am p lifiers and low -noise V C O ’s. A v a ila b le in a surface-m oun table plastic package, as w ell as the popular	OCR Scan	PS911 O-226AA A/500 MMBR911L MPS911	PDF

BSY52 Abstract: BSY51 BSY 51 bsy 39 Contextual Info: BSY51 BSY52 SILICON PLANAR NPN PRELIM IN A R Y DATA G EN ER A L PURPOSE A M PLIFIERS The B S Y 51 and B S Y 52 are silicon planar epitaxial NPN transistors in Jedec T'O -39 metal case, intended for use in high performance am plifier, oscillator and switching circuits.	OCR Scan	BSY51 BSY52 BSY52 BSY 51 bsy 39	PDF
Contextual Info: 3GE D • 7^237 0D31DÔ1 1 ■ rz 7 sgs-thom son ^ 7 # bsyss o « [im i@ T M « § BSY56 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten ded for use in high performance amplifier, oscillator	OCR Scan	0D31DÃ BSY56 BSY55 BSY56 BSY55 ----T-31-23 BSY55-BSY56	PDF
PT 2102 ic Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003 Contextual Info: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under	OCR Scan	HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, HXTR-6106 MIL-S-19500, PT 2102 ic HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003	PDF
WMV smd transistor Abstract: smd mk Contextual Info: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .	Original		PDF
NPN MATCHED PAIRS Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58 Contextual Info: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60	OCR Scan	NTE58) NTE61) NTE60 NTE60) NTE88) NTE87 NTE87) NTE88 b43125ci NPN MATCHED PAIRS 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58	PDF
NDS7002A Contextual Info: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been	OCR Scan	2N7000/2N7002/NDF7000A/NDS7002A NDS7002A	PDF
bc547 smd transistor Abstract: BC547 smd lg smd transistor smd transistor BC547 smd transistor BC557 bc557 SMD philips SMD BC547 BC547 TRANSISTOR SMD transistor SMD bc547 BC557 smd Contextual Info: •I ^53^31 DD SM S S 7 T75 « A P X N AJ1ER P H I L I P S / D I S C R E T E BCV65 BCV65B b7E D SILICON PLANAR TRANSISTORS A m atched pair o f P-N-P and N-P-N crystal, based on th e BC557 and BC547, in a m icro m in ia tu re SO T-143 envelope. C om plem entary crystals give advantages in P.C.B. la y o u t using S.M .D. tech no lo g y.	OCR Scan	bbS3T31 BCV65 BCV65B BC557 BC547, OT-143 OT-143. BCV65: BCV65B: bc547 smd transistor BC547 smd lg smd transistor smd transistor BC547 smd transistor BC557 bc557 SMD philips SMD BC547 BC547 TRANSISTOR SMD transistor SMD bc547 BC557 smd	PDF
2SC4087 Abstract: 2SC4090 NE73439 NE73439B Contextual Info: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)	OCR Scan	b457414 NE73439 NE73439B NE73439B 2SC4087 2SC4090	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
Contextual Info: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors M M BR571LT1 M RF5711LT1 D esigned fo r low noise, w ide d yn a m ic range fro n t-e n d a m p lifie rs and low -noise V C O ’s. Available in a surface-m ountable plastic packages. This	OCR Scan	MMBR571LT1/D RF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711 18A-05 MRF5711LT1 MMBR571LT1 MRF5711LT1	PDF

SM 58 B TRANSISTORS Search Results

SM 58 B TRANSISTORS Result Highlights (5)

SM 58 B TRANSISTORS Datasheets Context Search

AT-60500

2SA1930 2sc5171

2N3583

2N6758

NE98203

DIODE BUZ

2N2218

MA-406 8.0000M-C3

2SC3584

2N6839

MHW5342A

BUZ 140 L

MMBR911L

BSY52

PT 2102 ic

WMV smd transistor

NPN MATCHED PAIRS

NDS7002A

bc547 smd transistor

2SC4087

transistor 5cw