SM-8 BIPOLAR TRANSISTOR Search Results

ZHB6718

Abstract: 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792

SM-8 BIPOLAR TRANSISTOR

Abstract: 4420 Transistor TP4030 ZHB6792 500mA H-bridge
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792

ZHB6790

Abstract: 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

h6718

Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

ZHB6790

Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIM INARY DATA SH EET ISS U E B JU LY 1997 FEATURES * Compact package * * * * Low on state losses Low drive requirem ents Operates up to 40V supply 2 A m p continuous rating ^ L J SM-8 8 LEAD SOT223 PARTMARKING DETAIL - ZHB6790

VQE24

Contextual Info: TO SH IB A GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (SM) HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATINGS UNIT Collector-Emitter Voltage VCES 1200

GT8Q102

Contextual Info: TO SH IBA GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 02 (SM) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3MAX. M AXIM UM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Colleetor-Emitter Voltage

Contextual Info: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)

zdt749

Abstract: 6075A ZDT6790 ZDT1049 SM-8 BIPOLAR TRANSISTOR
Contextual Info: Section 5: Bipolar Transistors S a tu r•ationTransistors up to Î 0 0 V o lts L o in Zetex has introduced the SM-8 surface mount package derived from the industry standard SOT223 outline. The SM-8 package features a unique lead fram e design which serves to increase the number of packaged com ponents,

Contextual Info: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive

GT8Q102

Contextual Info: GT8Q102 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATINGS UNIT Colleetor-Emitter Voltage

GT8Q102

Contextual Info: TOSHIBA GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Colleetor-Emitter Voltage

Contextual Info: TOSHIBA GT8Q102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3M AX. 1.32 MAXIMUM RATINGS (Ta = 25°C) oi—i SYMBOL RATING CHARACTERISTIC

GT8J102

Abstract: PFE13
Contextual Info: TOSHIBA GT8J102 SM G T 8 J 1 0 2 (S M) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR O HIGH POWER SWITCHING APPLICATIONS. O MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode SILICON N CHANNEL IGBT

k168

Abstract: GT8J102
Contextual Info: TOSHIBA GT8J102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed tf=0.35/¿s (Max.) • Low Saturation Voltage

GT8J102

Contextual Info: TO SH IBA GT8J102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode

Contextual Info: TO SH IB A GT8J102 SM G T 8 J 1 0 2 (S M) TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10.3M AX. 1.32 • • • • High Input Impedance High Speed : tf= 0.35^8 (Max.)

Contextual Info: GT8J102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) Unit in mm O HIGH POWER SWITCHING APPLICATIONS. O MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage

Contextual Info: T O SH IB A GT8Q102 SM TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL M O S TYPE G T 8 Q 1 0 2 (S M) HIGH POWER SW ITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTICS Collector-Emitter Voltage

Contextual Info: T O SH IB A G T1 5 J1 0 3 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 5 J 1 0 3 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3M AX. 1.32 • • • • High Input Impedance High Speed : tf= 0.35^8 (Max.)