SMALL SIGNAL GAAS FET Search Results
SMALL SIGNAL GAAS FET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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LBEE5XV2BZ-883 | Murata Manufacturing Co Ltd | Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) |
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LBEE5ZZ2XS-846 | Murata Manufacturing Co Ltd | Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification) |
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TCTH022AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function |
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SMALL SIGNAL GAAS FET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
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AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 | |
LORB
Abstract: NE2720 NE334S01
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NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01 | |
KGF1522Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0019-38-71 ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that |
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E2Q0019-38-71 KGF1522 KGF1522 | |
KGF1521
Abstract: TA 7286
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E2Q0018-38-71 KGF1521 KGF1521 TA 7286 | |
Contextual Info: electronic components OKI KGF1531_ Small-Signal Amplifier for UHF-Band and P C S Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L band frequencies that features low-voltage operation, low-current dissipation, high conversion gain, |
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KGF1531_ KGF1531 KGF1531 DD22B44 | |
Contextual Info: O K I electronic components KGF1521 Small-Signal Amplifier for JHF-Band and PCS Freqencies GENERAL DESCRIPTION The KGF1521 is a high-perform ance GaAs FET small-signal amplifier for L band frequencies that features low -voltage operation, low -current dissipation, low noise, and low distortion. The |
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KGF1521 KGF1521 24E40 0022flEb D022f | |
Contextual Info: O K I electronic components KGF1522_ Small-Signal Amplifier for UHF-Band and PC S Frequencies GENERAL DESCRIPTION The KGF1522 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The |
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KGF1522_ KGF1522 and-28 0D22A34 KGF1522 L724240 | |
KGF1531
Abstract: 0948
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KGF1531 KGF1531 0948 | |
Contextual Info: Small Signal GaAs FETs ^.*• ji.' 4 ' * * A * r* * I B It- «fc - • Selection G u id e . 1-2 Alphanumeric Index. 1-4 |
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po111
Abstract: KGF1521
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KGF1521 KGF1521 FEATUR21 po111 | |
po111
Abstract: KGF1522 CB 0925
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KGF1522 KGF1522 po111 CB 0925 | |
SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
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08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters | |
MGF1323Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N. |
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MGF1323 MGF1323, 13dBm 30rnA | |
transistor marking E39
Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
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OT-143) transistor marking E39 E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72 | |
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Contextual Info: < High-power GaAs FET small signal gain stage > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES • High output power Po=36.5dBm(TYP.) |
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MGF0805A MGF0805A, 400mA | |
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION |
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MGF0905A MGF0905A, 65GHz 26dBm 800mA | |
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION |
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MGF0904A MGF0904A, 65GHz 15dBm 200mA | |
Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli |
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MGF1923 13dBm 12GHz | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1923 ! i TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION The M G F1923, low noise GaAs FET w ith an N-channel Schottky gate, is designed fo r use in S to Ku band ampli fiers. The M G F1923 is mounted in the super 12 tape. |
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MGF1923 F1923, F1923 12GHz 13dBm 12GHz 10rnA | |
TA 70/04Contextual Info: O K I electronic com ponents KGF1521_ Small-Signal Amplifier for UHF-Band and PCS Freqencies GEN ER A L D ES C R IPTIO N The KGF1521 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The |
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KGF1531
Abstract: D 471 MARKING 3773
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E2Q0020-38-71 KGF1531 KGF1531 D 471 MARKING 3773 | |
MGF0905A
Abstract: IDS800
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MGF0905A MGF0905A, 65GHz 26dBm 800mA MGF0905A IDS800 | |
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN |
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MGF0912A MGF0912A, 33dBm | |
MGF0909A
Abstract: MGF0909a application
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MGF0909A MGF0909A MGF0909a application |