SMD 6C TRANSISTOR MARKING Search Results

SMD TRANSISTOR MARKING 6C

Abstract: smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage IC = 10 mA

smd transistor w1a

Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

fire alarm using thermistor

Abstract: NTC 15D principle of heat sensor with fan cooling 15d smd transistor ntc 100-9 VISHAY VDR PTC nonlinear resistors Circuit Protection Devices NTC Thermistors rate of rise heat detectors smd transistor 15d
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . P TC a nd NTC T he r mistor s, T hrough - Hole Va r istor s r e s i s t i v e p r o d uc t s Circuit Protection with Non-Linear Resistors capabilities w w w. v i s h a y. c o m Circuit Protection with Non-Linear Resistors

sensor BPW34 application note

Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,

DIN 58405

Contextual Info: ILD223T Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package FEATURES • Two channel optocoupler • High current transfer ratio at IF = 1.0 mA, 500 % minimum A 1 8C • Isolation test voltage, 4000 VRMS C 2 7E A 3 6C • Electrical specifications similar to standard 6-pin

SMD 100 6n cap

Abstract: smd transistor marking 6n SMD TRANSISTOR MARKING 6C
Contextual Info: Wißt H E W L E T T mLfïM P A C K A R D Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N 134* 81028 HCPL-563X HCPL-663X Technical Data 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X :'See m atrix for available extensions. F eatu res

draloric cermet potentiometer

Abstract: Dale Electronics thermistors roederstein smd resistor NTC 15D tansitor 15d smd transistor passive component infrared emitters and detectors non-linear resistors thermistors philips roederstein ESTA
Contextual Info: Vishay Intertechnology, Inc. Company Overview www.vishay.com About Vishay Intertechnology Growth through Innovations and Acquisitions Vishay Intertechnology was founded in 1962 by Dr. Felix Zandman, with the financial support of Alfred P. Slaner. The Company was named after the village in Lithuania where

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

2d SMD PNP TRANSISTOR

Abstract: NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23
Contextual Info: CENTRAL SEMICONDUCTOR 50E D nñnb3 CEN D D D Q S l l 3Gb SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 CMPT3906 CMPT4401 CMPT4403 CMPT5086 CMPT5087 CMPT5088

TRANSISTOR 12N50C3

Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
Contextual Info: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances

Contextual Info: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated

17n80c3

Abstract: SP000216353
Contextual Info: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated

Contextual Info: SPB17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Contextual Info: SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

12n50c

Abstract: DSA+1-16a
Contextual Info: SPB12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Contextual Info: SPB17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

17N80C3

Contextual Info: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature VDS 800 V RDS on 0.29 Ω ID 17 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

21n50c3

Abstract: 21N50C PG-TO263 21n50 SPP21N50C3 PG-TO263-3-2 SPB21N50C3
Contextual Info: SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

17n80c3

Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3
Contextual Info: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated

17n80c3

Abstract: UJ14
Contextual Info: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated

SPB21N50C3

Contextual Info: SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

12N50c

Abstract: 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v
Contextual Info: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances

PEMD18

Abstract: PUMD18 PEMB18 PEMB1 PEMH18
Contextual Info: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 4 — 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.

SMD TRANSISTOR MARKING 6C

Abstract: TRANSISTOR SMD MARKING CODE h5 smd marking T1 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18
Contextual Info: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 4 — 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.