Untitled
Abstract: No abstract text available
Text: Phase-leg Rectifier Diode VRSM V 1300 1700 VRRM V 1200 1600 TO-247 AD DSP 25 VRRM = 1200/1600 V IFRMS = 2 x 43 A IFAVM = 2 x 28 A TO-247 AD SMD TO-247 SMD TO-247 Type DSP 25-12A DSP 25-16A DSP 25-12AS DSP 25-16AS 1 2 3 1 1 2 Symbol Test Conditions I FRMS I FAVM
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O-247
O-247
5-12A
5-16A
25-12AS
25-16AS
D-68623
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IXGH22N50B
Abstract: IXGH22N50BU1 IXGH22N50BU1S smd diode 819 To-247 Jedec package outline
Text: Preliminary data TM HiP erF AST HiPerF erFAST with Diode IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S IGBT Combi P ac k Pac ack VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions Maximum Ratings VCES
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IXGH22N50BU1
IXGH22N50BU1S
O-247
IXGH22N50B
IXGH22N50BU1
IXGH22N50BU1S
smd diode 819
To-247 Jedec package outline
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32N60AU1
Abstract: D-68623 32N60
Text: IXGH 32N60AU1 IXGH 32N60AU1S VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack = = = = 600 V 60 A 2.9V 125 ns TO-247 SMD (32N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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32N60AU1
32N60AU1S
O-247
32N60AU1S)
temp13
D-68623
32N60AU1
32N60
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IXGH32N50BU1
Abstract: IXGH32N50BU1S
Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXGH32N50BU1
IXGH32N50BU1S
O-247
32N50BU1S)
IXGH32N50BU1
IXGH32N50BU1S
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VOGT 503
Abstract: 503 16 504 00 vogt VOGT u3 503 10 T60403-L4025-X021 vogt 503 20 vogt transformer VOGT EF20 vogt smd 503 20 T60407 vogt* 503
Text: Application Hint DS1, 2001-09-12 2B1Q Second Generation Modular ISDN NT Q-SMINT O, I, IX PEF 80912, 82912, 81912, 80913, 82913, 81913 Version 1.3 1 External Components for Q-SMINT Applications 1.1 Sourcing Lists for Interface Transformers Table 1 and Table 2 contain information pertaining to interface transformers suitable for
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ir3870
Abstract: cap 150uf 35v SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A Cap X7R 1210 T4 GRM1885C1H470JA01D MCR10EZPJ000 murata x7r capacitor 0603 IR3870 voltage regulator c86 sot23 SMD r105
Text: IRDC3870 SupIRBuck TM USER GUIDE FOR IRDC3870 EVALUATION BOARD DESCRIPTION The IR3870 SupIRBuckTM is an easy-to-use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make IR3870 a space-efficient solution that
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IRDC3870
IRDC3870
IR3870
cap 150uf 35v
SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A
Cap X7R 1210 T4
GRM1885C1H470JA01D
MCR10EZPJ000
murata x7r capacitor 0603
IR3870 voltage regulator
c86 sot23
SMD r105
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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Untitled
Abstract: No abstract text available
Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB
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12N100U1
12N100AU1
O-247
O-247
-247S
12N100
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Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
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12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
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ad 0845
Abstract: 45c smd diode smd diode MS 22 SMD Diode KE
Text: aixYS DSP25 VRRM IFRMS Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FAVM r— V n sM V V RRM TO-247 SMD 1200 1600 Type DSP 25-12A DSP 25-16A ~l 4-4 -4 ! r V 1300 1700 TO -247 AD r - w H 1 DSP 25-12AS DSP 25-16AS 2 - i TO-247 SMD TO-247 AD I 3 TAB
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DSP25
O-247
5-12A
5-16A
25-12AS
25-16AS
ad 0845
45c smd diode
smd diode MS 22
SMD Diode KE
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IXSX35N120AU1
Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
Text: High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (IXSX35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C
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247TM
IXSX35N120AU1
IXSX35N120AU1S
IXSX35N120AU1S)
lo150
O-247
35N120AU1
35N12QAU1S
K 545
K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
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E25 SMD diode
Abstract: No abstract text available
Text: Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S CES C25 Combi Pack Short Circuit SOA Capability CE SAT 1200 V 70 A 4V PLUS TO-247 SMD (IXSX35N120AU1S) Symbol Test Conditions vCES vCGR v GES Tj = 25°C to 150°C; RGE = 1 Mi2
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IXSX35N120AU1
IXSX35N120AU1S
O-247TM
IXSX35N120AU1S)
O-247TM
IXSX35N12
IXSX35N12QAU1
E25 SMD diode
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50N60
Abstract: 50N6
Text: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2
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247TM
IXSX50N60AU1
IXSX50N60AU1S
50N60AU1S)
O-247
247TM
50N60AU1)
50N60
50N6
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Untitled
Abstract: No abstract text available
Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600
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IXGX50N60AU1
IXGX50N60AU1S
O-247
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30N60
Abstract: No abstract text available
Text: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
IXGH3QN60BU1
IXGH30N6QBU1S
30N60
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM
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IXGH32N50BU1
IXGH32N50BU1S
O-247
32N50BU1S)
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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IXGH24N50BU1
IXGH24N60BU1
T0-247
24N50
24N60
.24n50
xgh2
IXGH24N60BU1
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IXGH24N60BU1
Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Text: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
24N50
HIPERFAST IGBT WITH DIODE
24N60
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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MJI-25
Abstract: No abstract text available
Text: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2
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IXGH32N50BU1
IXGH32N50BU1S
O-247
32N50BU1S)
MJI-25
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Untitled
Abstract: No abstract text available
Text: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU
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IXGH22N50BU1
IXGH22N50BU1S
O-247
4bflb22b
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TO-247 Package y
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S V CES 600 V 60 A 1.8 V 130 ns ^C25 V CE sat Combi Pack TO-247 SMD (30N60BU1S) m Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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IXGH30N60BU1
IXGH30N60BU1S
O-247
TO-247 Package y
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smd diode 819
Abstract: packages to247 355 smd smd diode 615
Text: DSP 25 Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A R RM F R M S F(AV)M v*RSM V 1300 1700 v HRM TO-247AD V Type 1200 1600 TO-247 AD TO-247SMD DSP 25-12A DSP 25-16A TO-247 SMD DSP 25-12AS DSP 25-16AS 2 3 Symbol Test Conditions U(RMS) ^F(AV)M TVJ Pt
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O-247
O-247AD
5-12A
5-16A
O-247SMD
25-12AS
25-16AS
D5-10
smd diode 819
packages to247
355 smd
smd diode 615
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TO-247 AD
Abstract: No abstract text available
Text: - □IXYS DSP25 VRRM Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FRMS FAVM v RSM VRRM V V DSP 25-12A DSP 25-16A DSP 25-12AS DSP 25-16AS Test Conditions ^FRMS TV.j —"^"vjM Tc = 100°C; 180° sine ^FSM J i2d t T stg 1 2 IM 43 28 A A t = 10m s
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DSP25
5-12A
5-16A
25-12AS
25-16AS
TO-247 AD
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