35n120au1
Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
|
Original
|
PDF
|
35N120AU1
35n120au1
IXSX35N120AU1
IGBT 500V 35A
35N120AU
|
IXLK35N120AU1
Abstract: No abstract text available
Text: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous
|
Original
|
PDF
|
35N120AU1
IXLK35N120AU1
|
IXLN35N120AU1
Abstract: No abstract text available
Text: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous
|
Original
|
PDF
|
35N120AU1
IXLN35N120AU1
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
|
Original
|
PDF
|
35N120AU1
150perature
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
|
Original
|
PDF
|
35N120AU1
O-247TM
IXSX35N120AU1)
|
IXSN35N120AU1
Abstract: IXSN35N120AU IXSN35N120 35n120au1
Text: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A miniBLOC, SOT-227 B 1 2 VGES Continuous ±20 V
|
Original
|
PDF
|
35N120AU1
OT-227
IXSN35N120AU1
IXSN35N120AU
IXSN35N120
|
IXSH 35N120AU1
Abstract: 35N120AU1
Text: High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE sat = 1200 V = 70 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM
|
Original
|
PDF
|
35N120AU1
IXSH 35N120AU1
35N120AU1
|
35N120AU1
Abstract: IXSN35N120 IXSN35N120AU1
Text: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20 V VGEM Transient ±30 V IC25
|
Original
|
PDF
|
35N120AU1
IXSN35N120
IXSN35N120AU1
|
IXSK35N120AU1
Abstract: IC tl 072 35N120AU1
Text: Preliminary Data Sheet High Voltage IGBT with Diode 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
IXSK35N120AU1
IC tl 072
35N120AU1
|
7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
|
Original
|
PDF
|
AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
|
b1113
Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2
|
Original
|
PDF
|
PLUS247
247TM
O-247
O-264
O-268
16N60U1
24N60U1
30N60U1
62N60U1
24N60AU1
b1113
diode b18
35N120AU1
40N60CD1
diode b129
50N60BD1
30N60BD1
40N60BD1
IXSH 35N120AU1
diode b14
|
IXSN35N120
Abstract: No abstract text available
Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings
|
OCR Scan
|
PDF
|
35N120AU1
OT-227
IXSN35N120AU1
4bflb22b
IXSN35N120
|
Untitled
Abstract: No abstract text available
Text: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings
|
OCR Scan
|
PDF
|
35N120AU1
O-264
|
Untitled
Abstract: No abstract text available
Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25
|
OCR Scan
|
PDF
|
35N120AU1
to150
O-264AA
JEDECTO-264AA
35N120AU1
|
|
|
35n120au1
Abstract: C8750 35N120 35N120AU
Text: DIXYS High Voltage IGBT with Diode IXSN 35N120AU1 V CES I 1200 V 70 A 4V C25 VCE sat Short Circuit SOA Capability Symbol Test Conditions V CES Tj =25°Cto 150°C 1200 V VCGn Tj = 25°Cto150°C ;R GE= 1 MQ 1200 A vGES v GEM Continuous 420 V Transient £30
|
OCR Scan
|
PDF
|
35N120AU1
Cto150
OT-227B,
35n120au1
C8750
35N120
35N120AU
|
35N120AU1
Abstract: IG17
Text: n ix Y S High Voltage IGBT with Diode VCES 'cas IXSX 35N120AU1 V CE SAT, = 1200 V = 70 A = *V PLUS 247 package Prelim inary data Symbol Test Conditions v' ces v CGR ^ Maximum Ratings = 25° C to 150° C V 1200 V v GES v*GEM Continuous ±20 V Transient ±30
|
OCR Scan
|
PDF
|
247TM
35N120AU1
O-247HL
O-247
35N120AU1
IG17
|
RM18T
Abstract: IXLK35N120AU1
Text: DIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat High Short Circuit SOA Capability Symbol Test C onditions v CES Tj = 25°C to 150°C 1200 V V CGR T.J = 25°C to 150°C; RrP = 1 M£2 tit 1200 V V GES Continuous +20 V V GEM Transient
|
OCR Scan
|
PDF
|
35N120AU1
O-264
tur90
RM18T
IXLK35N120AU1
|
IXLN35N120AU1
Abstract: DIXYS 35N120AU1
Text: DIXYS IGBT with Diode IXLN 35N120AU1 V CES ^C25 v v CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Symbol Test C onditions Maximum Ratings v CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 1200 V VGES
|
OCR Scan
|
PDF
|
35N120AU1
OT-227
IXLN35N120AU1
DIXYS
35N120AU1
|
MD 5034
Abstract: 35n120 IXLN35N120AU1 35N120AU1 DDD373D IXYS IGBT 0504N
Text: □IXYS IGBT with Diode IXLN 35N120AU1 v v ¥ ces ^C 25 C E sa t = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES ^ = 25°C to 150°C 1200 V VCGR ^ = 25°C to 150°C; RGE = 1 Mi2 1200 V v GES
|
OCR Scan
|
PDF
|
35N120AU1
OT-227
DDD373D
MD 5034
35n120
IXLN35N120AU1
DDD373D
IXYS IGBT
0504N
|
Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode 35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
|
OCR Scan
|
PDF
|
IXSK35N120AU1
O-26re
IXSK35N120AU1
|
B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
|
OCR Scan
|
PDF
|
O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
|
40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
|
OCR Scan
|
PDF
|
5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
|
IXSX35N120AU1
Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
Text: High Voltage IGBT with Diode 35N120AU1 35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C
|
OCR Scan
|
PDF
|
247TM
IXSX35N120AU1
IXSX35N120AU1S
IXSX35N120AU1S)
lo150
O-247
35N120AU1
35N12QAU1S
K 545
K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
|
35n120
Abstract: No abstract text available
Text: □IXYS High Voltage, High speed IGBT IXSH 35N120A VCES C25 v CE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions v CES T j = 25° C to 150° C 1200 V VCQR T j = 25°C to 150°C; RGE= 1 MQ 1200 V vQES vGEM Continuous ±20 V T ransient
|
OCR Scan
|
PDF
|
35N120A
O-247
O-247
35N120
35N120AU1
|
