35N120AU1 Search Results

35n120au1

Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

IXLK35N120AU1

Contextual Info: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous

IXLN35N120AU1

Contextual Info: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous

Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings

Contextual Info: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25

IXSN35N120AU1

Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VC E S = 1200 V = 70 A = 4V C 25 V C E sat S C S O A Capability Symbol Test Conditions Maximum Ratings V 'CES T j = 25°C to 150°C vCGR T, = 25°C to 150°C; RGE = 1 MiJ 1200 A VOES vQE„ C ontinuous ±20 V Transient

35n120au1

Abstract: C8750 35N120 35N120AU
Contextual Info: DIXYS High Voltage IGBT with Diode IXSN 35N120AU1 V CES I 1200 V 70 A 4V C25 VCE sat Short Circuit SOA Capability Symbol Test Conditions V CES Tj =25°Cto 150°C 1200 V VCGn Tj = 25°Cto150°C ;R GE= 1 MQ 1200 A vGES v GEM Continuous 420 V Transient £30

35N120AU1

Abstract: IG17
Contextual Info: n ix Y S High Voltage IGBT with Diode VCES 'cas IXSX 35N120AU1 V CE SAT, = 1200 V = 70 A = *V PLUS 247 package Prelim inary data Symbol Test Conditions v' ces v CGR ^ Maximum Ratings = 25° C to 150° C V 1200 V v GES v*GEM Continuous ±20 V Transient ±30

RM18T

Abstract: IXLK35N120AU1
Contextual Info: DIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat High Short Circuit SOA Capability Symbol Test C onditions v CES Tj = 25°C to 150°C 1200 V V CGR T.J = 25°C to 150°C; RrP = 1 M£2 tit 1200 V V GES Continuous +20 V V GEM Transient

IXLN35N120AU1

Abstract: DIXYS 35N120AU1
Contextual Info: DIXYS IGBT with Diode IXLN 35N120AU1 V CES ^C25 v v CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Symbol Test C onditions Maximum Ratings v CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 1200 V VGES

IXSN35N120AU1

Abstract: IXSN35N120AU IXSN35N120 35n120au1
Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A miniBLOC, SOT-227 B 1 2 VGES Continuous ±20 V

IXSH 35N120AU1

Abstract: 35N120AU1
Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE sat = 1200 V = 70 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM

35N120AU1

Abstract: IXSN35N120 IXSN35N120AU1
Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20 V VGEM Transient ±30 V IC25

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode 35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

IXSX35N120AU1

Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
Contextual Info: High Voltage IGBT with Diode 35N120AU1 35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C

35n120

Contextual Info: □IXYS High Voltage, High speed IGBT IXSH 35N120A VCES C25 v CE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions v CES T j = 25° C to 150° C 1200 V VCQR T j = 25°C to 150°C; RGE= 1 MQ 1200 V vQES vGEM Continuous ±20 V T ransient

IXSK35N120AU1

Abstract: IC tl 072 35N120AU1
Contextual Info: Preliminary Data Sheet High Voltage IGBT with Diode 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

b1113

Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Contextual Info: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2