SMD DIODE UM 65 A Search Results

TRANSISTOR SMD MARKING CODE 1K

Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Contextual Info: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,

TRANSISTOR SMD MARKING CODE w6

Abstract: SMD TRANSISTOR MARKING 5H
Contextual Info: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,

BAT68-03W

Abstract: 318 MARKING DIODE
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT68-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features For mixer applications in the VHF/UHF range +0.1 2.6-0.1 1.0max For high speed switching 0.375 +0.05 0.1-0.02 0.475 Absolute M axim um R atings Ta = 25

MARKING SOT23 jbs

Abstract: 45AP smd JS BAR74 smd diode BAR74 smd JS 3
Contextual Info: Diodes SMD Type Silicon Switching Diode BAR74 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For high-speed switching applications +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05

MARKING SMD 43t

Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Contextual Info: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,

Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time

Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time

Contextual Info: BYG24D-M3/HM3, BYG24G-M3/HM3, BYG24J-M3/HM3 www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics

Contextual Info: BYG21K, BYG21M www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time

byg20j

Contextual Info: BYG20D thru BYG20J www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time

SMD TRANSISTOR HP

Contextual Info: WL¡m H EW LETT wLEM PACKARD Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N134* 81028 HCPL-563X HCPL-663X Technical Data 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X *See m atrix fo r available extensions. Features Dual Marked w ith Device

SMD IC ATD

Contextual Info: L M U 16/216 16 x 16-bit Parallel Multiplier DESCRIPTION FEATURES □ 45 ns W orst-Case M ultiply Time □ Low Power CMOS Technology □ Replaces TRW MPY016/TMC216, Cypress CY7C516, IDT 7216L, and AMD Am29516 □ Two's Com plem ent, Unsigned, or Mixed O perands

20N80

Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns RDS on trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C

Contextual Info: Bridge Diode Low Noise type Dual In-Line Package OUTLINE LN1WBA60 Package 1W Unit : mm Weight : 0.46g typ. SMD 10.5 ④ 600V 1.1A • • ① 品名略号 Type No. DIP LNWB 6030 ①＋ ③~ ②∼ 6.5 ③ 級表示（例） Class Feature ④− ② ロット記号（例）

lnwb

Abstract: 603-D diode smd marking BUF LN1WBA60
Contextual Info: Bridge Diode 低ノイズタイプ デュアルインライン型 Low Noise type Dual In-Line Package •外観図 OUTLINE LN1WBA60 Unit : mm Weight : 0.46g （typ.） Package：1W（SMD） 10.5 600V 1.1A ④ ① 品名略号 Type No. 特長 • 低ノイズ

Contextual Info: APEX HI CRO TECHNOLOGY CORP n PEX- b?E D 0B76b3b 000157b T63 H,GH VOLTAÇE POWER OPERATIONAL AM PLIFIERS PA84 • PA84A • PA84S APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 8 0 0 546-A P EX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • •

Contextual Info: LMU18 16 x 16-bit Parallel Multiplier DEV IC ES IN C O R PO R A TE D D E S C R IP T IO N FEATURES □ 20 ns W orst-Case M ultiply Time □ Low P ow er CMOS Technology □ Full 32-bit O u tp u t Port — No M ultiplexing R equired □ T w o’s C om plem ent, U nsigned, or

Contextual Info: STD2NB80-1 N - CHANNEL 800V - 4.6£2 - 1.9A - IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD2NB80-1 • . . . . . V dss R dS oii Id 800V < 6.5 Q. 1 .9 A TYPICAL RDS(on) = 4.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: WL¡m H EW LETT wLEM PACKARD Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix for available extensions. Features • Dual Marked w ith Device

k300 varistor

Abstract: k300 varistor 3225 diode k460 4032 3225 K300 4032 k300 smd 4032 k460 4032 k300 K300 smd varistor k300 4032 S275BR7
Contextual Info: Metalloxid-Varistoren Metal Oxide Varistors – SIOV – Kennlinie und Schaltzeichen Characteristic and circuit symbol Varistoren sind spannungsabhängige elektrische Widerstände mit symmetrischer U/l-Kennlinie, deren Widerstandswert mit steigender Spannung abnimmt und so den weiteren Aufbau

IRLMS6702

Abstract: Diode SMD ED 98 RK 73 SMD smd diode marking mp 22AV
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1414 IRLMS6702 PRELIMINARY HEXFET Power MOSFET Generation 5 Technology ● Micro6 Package Style ● Ultra Low Rds on ● P-Channel MOSFET Description ● A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to

10.00 ju

Abstract: IRF7422D2
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8

Contextual Info: February 1993 Semiconductor 54AC/74AC139 • 54 ACT/74 ACT 139 Dual 1-of-4 Decoder/Demultiplexer General Description Features The ’A C /’ACT139 is a high-speed, dual 1-of-4 decoder/de­ multiplexer. The device has two independent decoders, each accepting two inputs and providing four mutually-exclusive active-LOW outputs. Each decoder has an activeLOW Enable input which can be used as a data input for a

5962-8671601EX

Abstract: 5962-86716012X ADG201HS ADG201HSAQ ADG201HSJN ADG201HSKN ADG201HSKR DG271 HI-201HS N-16
Contextual Info: LC2M0S High Speed, Quad SPST Switch ADG201HS ANALOG DEVICES FEATURES 50ns max Switching Time Over Full Temperature Range Low Ron 3 0 ii typ Single Supply Specifications for + 10.8V to + 16.5V Operation Extended Plastic Temperature Range { —40°C to + 85°C)