SMD JS P 84 Search Results

32N50

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C

Contextual Info: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C

Contextual Info: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 84 lm bei 500 mA

Contextual Info: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 84 lm bei 500 mA

Contextual Info: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 84 lm bei 500 mA

Contextual Info: Nonvolatile Memory 1-Kbit E2PROM SDE 2506 Preliminary Data MOS IC Type Ordering Code Package SDE 2506 SDE 2506 K Q67100-H8441 Q 67100-H 8473 P-DIP-8 MIKROPACK SMD Features • • • • • • • • • • W ord-organized reprogram m able nonvolatile memory in n-channel floating-gate

Contextual Info: Infineon SPP80P06P SPB80P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current

IXGH24N60BU1

Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Contextual Info: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600

Contextual Info: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated

smd diode schottky code marking 5A

Abstract: SMD MARKING CODE M 4 Diode U01 SMD diode smd marking 5P smd DIODE code marking Q KIV* diode smd diode marking c3 diode SMD MARKING CODE JV DE5PC3 smd code marking js
Contextual Info: Schottky Barrier Diode Twin Diode mnm DE5PC3 Package o u t lin e E-pack U nit I mm W eigh t 0.326 k T y p 30V 5A 1 *1 *1 0 @ ® Feature • SMD • Ultra-Low V f=0.4V • High lo Rating -Small-RKG • SMD • î 3 ® V f =0.4V T y p e No. Date code Main Use

BUZ102

Abstract: smd transistor py
Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code

Contextual Info: BSS 84P In fin e o n technologies Preliminary Data SIPMOS Small-Signal-T ransislor Features Product Summary • P Channel Drain source voltage Vos • Enhancement mode -60 Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 8

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

c608 e diode

Abstract: smd diode 46A C605 Q C605 B marking c606 c600h c608 A diode irll3303
Contextual Info: PD - 9.1379A International M R Rectifier IRLL3303 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance Vdss = 30V

NL322522T-1R5K-S

Abstract: NL322522T-6R8K-S NL453232T-101K-S NLC322522T-681 NL322522T-330K-S NL453232T-102K-S NL322522T-150K NL322522T-680K-S NL322522T-100K-S NL322522T-8R2K-S
Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS NL/NLC Series Wound Chip Inductors APPLICATIONS Microtelevisions, liquid crystal televisions, video cameras, portable VCRs, car radios, car stereos, thin tape radios, television tuners, mobile telephones, radio and other electronic

s3h 02

Abstract: A1t smd sot23 a1z LMV118 avnet LMP2011 LMP2012 LMP2014 LMV771 LMV772
Contextual Info: SIS! S&I-SJ & : A m plifiers Made Simple"1 Amplifiers Made Simple ^. <& S. 2 i e | 4r is-®} tH 4 A m plifiers M ade Sim ple^- °1 ^ M A] jSL. ZI&]^. Amplifier Made Sim ple0! -2}-<§^!‘ ig t S .& ^ « 8 a] ^ • 341 SP IC E • • •§'A1®11 n # oj o.^a] ^

NL252018T-4R7

Abstract: NL453232T-4R7K-S NL322522T-100K-S NL322522T-R18K NL322522T-5R6K-S NL453232T-331K-S NL453232T-150K-S YAGEO NL453232T-561K NL453232T-R27M
Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS NL Series Wound Chip Inductors APPLICATIONS Microtelevisions, liquid crystal televisions, video cameras, portable VCRs, car radios, car stereos, thin tape radios, television tuners, mobile telephones, radio and other electronic devices.

24N60AU

Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Contextual Info: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V

smd diode SM 97

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M

BSH103 MARKING

Abstract: TRANSISTOR SMD MARKING CODE DK BSH103 TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

Q65110A9074

Abstract: osram LED of oslon all range smd code jy
Contextual Info: OSLON SSL Lead Pb Free Product - RoHS Compliant LD CP7P, LT CP7P Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit Silikonverguss und Linse • Typischer Lichtstrom: 510 mW (tief blau), 92 lm (true green) bei 350 mA