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    SMD MARKING Q1 Search Results

    SMD MARKING Q1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX181BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX221SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 220ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601SH1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
    DLW21SH670HQ2L
    		Murata Manufacturing Co Ltd CMC SMD 67ohm 320mA POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX800BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 80ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD MARKING Q1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3N10L

    Abstract: 3N10L12 PG-TO263-3-2 3N10L1
    Contextual Info: Target Data Sheet IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A • MSL1 up to 260°C peak reflow


    Original     		IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70N10S3L-12 IPI70N10S3L-12 PG-TO263-3-2 3N10L 3N10L12 3N10L1 PDF

    3N10L16

    Abstract: DIODE smd marking v1 smd diode 949
    Contextual Info: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI50N10S3L-16 PG-TO263-3-2 3N10L16 DIODE smd marking v1 smd diode 949 PDF

    4N03L15

    Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
    Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 4N03L15 DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 PDF

    3N10L12

    Abstract: IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L
    Contextual Info: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L12 IPI70N10S3L-12 3N10L12 IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L PDF

    4N06L05

    Abstract: DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode
    Contextual Info: IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L05 IPI80N06S4L-05 4N06L05 DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode PDF

    4N06L08

    Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
    Contextual Info: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L08 IPI45N06S4L-08 4N06L08 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140 PDF

    4N06L07

    Abstract: smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809
    Contextual Info: IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 6.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L07 IPI80N06S4L-07 4N06L07 smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809 PDF

    SMD-2520

    Abstract: 3N10L smd diode 104
    Contextual Info: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI70N10S3L-12 SMD-2520 3N10L smd diode 104 PDF

    4N06L04

    Abstract: IPI90N06S4L-04 DIODE smd marking Ag IPB90N06S4L-04 IPP90N06S4L-04 PG-TO263-3-2 t 04 27 smd c2804
    Contextual Info: IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 3.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L04 IPI90N06S4L-04 4N06L04 IPI90N06S4L-04 DIODE smd marking Ag IPB90N06S4L-04 IPP90N06S4L-04 PG-TO263-3-2 t 04 27 smd c2804 PDF

    3N10L16

    Abstract: 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1
    Contextual Info: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L16 IPI50N10S3L-16 3N10L16 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1 PDF

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Contextual Info: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING PDF

    3pn1005

    Abstract: IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80
    Contextual Info: IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 4.8 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN1005 IPI100N10S3-05 3pn1005 IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80 PDF

    4n0603

    Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2
    Contextual Info: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0603 IPI120N06S4-03 4n0603 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2 PDF

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31 PDF

    4N0607

    Abstract: smd diode UM 07 DIODE smd marking 82a 4N06 DIODE smd marking Ag IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 PG-TO263-3-2
    Contextual Info: IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.1 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0607 IPI80N06S4-07 4N0607 smd diode UM 07 DIODE smd marking 82a 4N06 DIODE smd marking Ag IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 PG-TO263-3-2 PDF

    3n1012

    Abstract: IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2
    Contextual Info: IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 11.3 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 70 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N1012 IPI70N10S3-12 3n1012 IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2 PDF

    4N0605

    Abstract: smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06
    Contextual Info: IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0605 IPI80N06S4-05 4N0605 smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06 PDF

    4N03L04

    Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
    Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03 PDF

    4N03L04

    Abstract: IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2
    Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2 PDF

    3N06L06

    Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
    Contextual Info: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1


    Original     		IPI80N06S3L-06 IPP80N06S3L-06 IPB80N06S3L-06 IPP80N06S3L-06 3N06L06 BIPP80N06S3L-06, 3N06L06 C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06 PDF

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Contextual Info: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original     		IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING PDF

    4N03L03

    Abstract: 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd
    Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L02 IPI80N03S4L-03 4N03L03 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd PDF

    C3206

    Abstract: H4 SMD IPB80N04S3-H4 IPI80N04S3-H4 IPP80N04S3-H4 PG-TO263-3-2 3n04h
    Contextual Info: IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N04H4 IPI80N04S3-H4 C3206 H4 SMD IPB80N04S3-H4 IPI80N04S3-H4 IPP80N04S3-H4 PG-TO263-3-2 3n04h PDF

    3n0407

    Abstract: 3N04 DIODE smd marking v1 ANPS071E IPB70N04S3-07 IPI70N04S3-07 IPP70N04S3-07 PG-TO263-3-2 Application Note ANPS071E 3N040
    Contextual Info: IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0407 IPI70N04S3-07 3n0407 3N04 DIODE smd marking v1 ANPS071E IPB70N04S3-07 IPI70N04S3-07 IPP70N04S3-07 PG-TO263-3-2 Application Note ANPS071E 3N040 PDF