SMD TRANSISTOR 68 W Search Results

transistor 2N2222 SMD

Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
Contextual Info: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

atmel 0720

Abstract: 3DC1515S ATAK5276-83 ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283
Contextual Info: LF Wake-up Demonstrator ATAK5276-83 1. General Description ATAK5276-83 is intended to demonstrate the performance of an LF wake-up channel needed for battery-driven systems. Typical wake-up applications can be found in vehicles for Tire Pressure Monitoring TPM .

HIR26-21C

Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Contextual Info: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight

6 pin TRANSISTOR SMD CODE 21

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

how to test scr

Contextual Info: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They

SMD TRANSISTOR MARKING 76

Abstract: smd a62 smd marking CF smd a61 differential pair cascode SMD A115 LMV712MM LMV712MMX LMV712TL LMV711
Contextual Info: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-toRail inputs combined with speed and low noise. They offer a

smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part

transistor d 1302

Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

amplifier TRANSISTOR 12 GHZ

Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

q406 transistor

Abstract: MAX3232 smd TRANSISTOR Q406 HC49 MEGATEC 0805B105K250CT D-Sub 44-pin female Connector 8X2 LCD DISPLAY transistor C509 MAX3232 pin schematic q406
Contextual Info: DEMO9S08LC60 Schematic and Bill of Material DC01134 GND C110 22pF BKGD 22pF C109 BDM J104 2 4 6 4 1 3 www.softecmicro.com GND 3V3 PTB1 ENA J103B PTB0 ENA RESET# R101 10M NOT POPULATED 1 3 5 Y101 32,768KHz CRYSTAL 2 J103A XTAL EXTAL 40 41 42 43 44 45 46 47

13003 charger

Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26

Contextual Info: LMV712 LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown Literature Number: SNOS534G LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features

thermistor 100k

Abstract: ECJ-2YB1H104K ecj2yb1h104k smd transistor ne c2 transistor SMD DK ERJ3GSY0R00V philips thermistor 250 ohm RK73ZETTP 600S0R5BT250XT 600s3r3bt250xt
Contextual Info: SLD-1026Z 3 Watt Discrete LDMOS Device Plastic Surface Mount Package SLD-1026Z Preliminary 3 WATT DISCRETE LDMOS DEVICE PLASTIC SURFACE MOUNT PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Z Part Number Package: SOF-26 Product Description

BLF6G10LS-200RN

Abstract: BLF6G10-200RN RF35 A1118
Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

BLF6G10-200RN

Abstract: BLF6G10LS-200RN RF35 vj1206y224kxb
Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 688 MHz to 1000 MHz. Table 1. Typical performance

200WN

Contextual Info: BLA6G1011-200R Power LDMOS transistor Rev. 01 — 17 June 2009 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers

Contextual Info: Radiation Hardened Programmable Low Power Op Amps HS-3530ARH, HS-3530AEH Features The HS-3530ARH, HS-3530AEH are Low Power Operational Amplifiers, which are internally compensated monolithic devices offering a wide range of performance specifications. Parameters such as power dissipation, slew rate, bandwidth,

CDFP3-F10

Abstract: HS2-3530ARH-8 5962F9568701QGA 5962F9568701V9A 5962F9568701VGA 5962F9568701VXC HS2-3530ARH HS2-3530ARH-Q HS-3530ARH HS9-3530ARH
Contextual Info: HS-3530ARH Data Sheet Radiation Hardened Programmable Low Power Op Amp The HS-3530ARH is a Low Power Operational Amplifier which is an internally compensated monolithic device offering a wide range of performance specifications. Parameters such as power dissipation, slew rate, bandwidth,

electronic ballast 18w cfl lamp

Abstract: philips cfl 18W UM1039 1n4007 smd SMD Capacitor symbols UBA2024P DIODE IN4007 SMD DIODE 1N4007 DATASHEET OSRAM cfl ic burner circuit
Contextual Info: UM10393 UBA2024P DIP8 13 W demoboard Rev. 01 — 2 October 2009 User manual Document information Info Content Keywords UBA2024P, half-bridge CFL driver, non-dimmable Abstract This document describes the correct use of the UBA2024P half-bridge CFL driver demoboards for both 120 V and 230 V mains voltages and

Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.

smd diode a7

Contextual Info: SFH628A, SFH6286 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Low Input Current FEATURES • High common mode interference immunity • Isolation test voltage, 5300 VRMS • Low coupling capacitance 1 A/C 1 4 C C/A 2

BLF6G10LS-135R

Abstract: f4 smd transistor mobile rf power amplifier transistor RF35 2360d
Contextual Info: BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance