SMD TRANSISTOR 9J Search Results

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

1206 transistor

Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •

Contextual Info: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

UT-090C-25

Abstract: BLF178XR BLF178 UT-141C 001aan207
Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 2 — 15 May 2012 Preliminary data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

Contextual Info: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

Contextual Info: HM-65262 HARRIS a S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM August 1996 Description Features • Fast Access T im e. 70/85nsM ax • Low Standby C urrent. 50|xA Max

g10 smd transistor

Abstract: SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Micro8,u devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ST 0841

Abstract: ST 0721 0721 marking st 12089 MARKING code mf stmicroelectronics STMicroelectronics marking code 0721 J-STD-020B PD55003L-E PD55003LE TRANSISTOR SMD MARKING CODE 703
Contextual Info: PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 17dB gain@500 MHz/12.5 V ■ New leadless plastic package ■ ESD protection

st 54003

Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

UT-090C-25

Abstract: BLF647P 130005 power transistor
Contextual Info: BLF647P Broadband power LDMOS transistor Rev. 2 — 12 April 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

smd CAw

Contextual Info: National S e mi c o n du c t j r O DI 3 73 CLC502 C l a m p i n g , L o w - G a i n Op A m p with F a s t 1 4 - b i t Set tl i ng General Description I” O s• o Features ■ ■ ■ ■ CQ Output clamping with tast recovery 0.0025% settling in 25ns 32ns max.]

Contextual Info: SG723 Lw fw ity M I C R O E L E C T R O N I C S PRECISION VOLTAGE REGULATOR DESCRIPTION FEATURES This monolithic voltage regulator is designed for use with either positive or negative supplies as a series, shunt, switching, or floating regulator with currents up to 150mA. Higher current requirements may be

Contextual Info: CY3274 Cypress High Voltage Programmable Powerline Communication Development Kit Guide Doc. # 001-53598 Rev. *E Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com [+] Feedback

HS3182-8

Contextual Info: f f ì H A R R I S H S E M I C O N D U C T O R TTL and CMOS Compatible Inputs • Adjustable Rise and Fall Times via Two External Capacitors • Programmable Output Differential Voltage via V r ef Input • Operates at Data Rates Up to 100 Kilobits/Sec • Output Short Circuit Proof and Contains Over-Voltage

smd transistor marking 12H

Abstract: BV 9y transistor smd smd transistor code 3.6h LD6836TD TRANSISTOR SMD MARKING CODE pv C14P marking 9YH smd code marking wlcsp 9 TRANSISTOR SMD MARKING CODE 29P smd code marking 27H
Contextual Info: LD6836 series Ultra low dropout regulators, low noise, 300 mA Rev. 2 — 5 October 2012 Product data sheet 1. Product profile 1.1 General description The LD6836 series is a small-size Low DropOut regulator LDO family with a typical voltage drop of 90 mV at 300 mA current rating. Operating input voltages can range from

Contextual Info: PTH04T220W, PTH04T221W www.ti.com . SLTS275D – DECEMBER 2006 – REVISED JULY 2009 16-A, 2.2-V to 5.5-V INPUT, NON-ISOLATED,

Contextual Info: PTH04T240W, PTH04T241W www.ti.com . SLTS276D – OCTOBER 2006 – REVISED JULY 2009 10-A, 2.2-V to 5.5-V INPUT, NON-ISOLATED,