Untitled
Abstract: No abstract text available
Text: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.
|
Original
|
PDF
|
AN11062
BLF888A
BLF888A,
BLF888A.
|
Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF888A;
BLF888AS
narrow15
BLF888A
|
smd transistor L33
Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF879P
smd transistor L33
dvbt transmitter
UT-090C-25
dvb-t2
SMD l33 Transistor
|
SMD EZ 648
Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF988;
BLF988S
BLF988
SMD EZ 648
smd transistor l32
smd transistor L33
smd transistor l31
J2151
J15-12
|
BLF888B
Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF888B;
BLF888BS
BLF888B
smd transistor L33
Technical Specifications of DVB-T2 Transmitter
|
BLF188XR NXP
Abstract: No abstract text available
Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 2 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
|
Original
|
PDF
|
BLF188XR;
BLF188XRS
BLF188XR
BLF188XR NXP
|
907 TRANSISTOR smd
Abstract: No abstract text available
Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 — 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF884P;
BLF884PS
BLF884P
907 TRANSISTOR smd
|
smd transistor l32
Abstract: SMD EZ 648 001aan207 BLF0510H6600P
Text: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF0510H6600P
powe11
smd transistor l32
SMD EZ 648
001aan207
BLF0510H6600P
|
BLF578 NXP
Abstract: No abstract text available
Text: BLF578XR; BLF578XRS Power LDMOS transistor Rev. 2 — 14 May 2012 Preliminary data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the
|
Original
|
PDF
|
BLF578XR;
BLF578XRS
BLF578
BLF578XR
BLF578 NXP
|
BLF188XR
Abstract: blf188 BLF188XR NXP BLF18
Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 1 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
|
Original
|
PDF
|
BLF188XR;
BLF188XRS
2002/95/EC,
BLF188XR
blf188
BLF188XR NXP
BLF18
|
Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF888A;
BLF888AS
BLF888A
|
Untitled
Abstract: No abstract text available
Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF879P;
BLF879PS
200rs
BLF879P
|
BLF578XR
Abstract: blf578xr_blf578xrs BLF578 BLF578 NXP EZ-141-AL-TP-M17 TDK4532X7R1E475Mt020U blf578xrblf578xrs 001aan207 semi rigid coax EZ-141-AL-TP-M17
Text: BLF578XR; BLF578XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the
|
Original
|
PDF
|
BLF578XR;
BLF578XRS
BLF578
BLF578XR
blf578xr_blf578xrs
BLF578 NXP
EZ-141-AL-TP-M17
TDK4532X7R1E475Mt020U
blf578xrblf578xrs
001aan207
semi rigid coax EZ-141-AL-TP-M17
|
smd transistor l31
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF888A;
BLF888AS
BLF888A
smd transistor l31
|
|
|
Untitled
Abstract: No abstract text available
Text: BLF578XR; BLF578XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the
|
Original
|
PDF
|
BLF578XR;
BLF578XRS
BLF578
BLF578XR
|
UT-090C-25
Abstract: No abstract text available
Text: BLF174XR; BLF174XRS Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information
|
Original
|
PDF
|
BLF174XR;
BLF174XRS
2002/95/EC,
BLF174XR
UT-090C-25
|
Untitled
Abstract: No abstract text available
Text: BLF574XR; BLF574XRS Power LDMOS transistor Rev. 1 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the
|
Original
|
PDF
|
BLF574XR;
BLF574XRS
BLF574
BLF574XR
|
Untitled
Abstract: No abstract text available
Text: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF988;
BLF988S
BLF988
|
smd transistor L33
Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF879P
771-BLF879P112
BLF879P
smd transistor L33
SMD l33 Transistor
transistor smd l33
smd transistor l32
2663 transistor
j337
IEC C20 dimension
J17-15
J0582
|
Untitled
Abstract: No abstract text available
Text: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.
|
Original
|
PDF
|
BLF178XR;
BLF178XRS
BLF178XR
|
UT-090C-25
Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
|
Original
|
PDF
|
BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
UT-090C-25
smd transistor l32
NXP amplifier
EZ 711 253
J1072
ST EZ 711 253
|
Untitled
Abstract: No abstract text available
Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF884P;
BLF884PS
BLF884P
|
SMD l33 Transistor
Abstract: No abstract text available
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
|
Original
|
PDF
|
BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
SMD l33 Transistor
|
Untitled
Abstract: No abstract text available
Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
|
Original
|
PDF
|
BLF10H6600P;
BLF10H6600PS
BLF10H6600P
|