SMD TRANSISTOR MARKING Y1 Search Results

TRANSISTOR SMD MARKING CODE 210

Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking

TRANSISTOR SMD MARKING CODE A45

Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G

Contextual Info: Transistors Transistor T SMD Type Product specification KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

smd transistor A5

Abstract: smd transistor marking A5 SMD MARKING A16
Contextual Info: Transistors IC SMD Type Product specification FMY1A • Features Unit: mm ● PNP and NPN transistors have common emitters. ● Mounting cost and area can be cut in half. 4 5 1 3 Tr2 (4) (2) 2 3 (1) R1 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Parameter

A08 smd transistor

Abstract: smd transistor A5 SMD a16 Transistor smd transistor marking A5 SMD MARKING A16
Contextual Info: Transistors IC SMD Type Emitter Common Dual Transistors FMY1A • Features Unit: mm ● PNP and NPN transistors have common emitters. ● Mounting cost and area can be cut in half. 4 5 1 (3) Tr2 (4) (2) 2 3 (1) R1 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃

Diode SOT-23 marking 27

Abstract: TRANSISTOR SMD MARKING CODE w6 Zener diode smd marking code 51 y Zener diode smd marking code 2A 2A transistor smd SOT-23 Zener Diode SOT-23 marking B TRANSISTOR SMD MARKING CODE y12 SMD Transistor Y12 TRANSISTOR SMD MARKING CODE 81c TRANSISTOR SMD MARKING CODE LF
Contextual Info: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 015 • cen T - SMD Zener Diode SOT-23 Case 350mW W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,

TRANSISTOR SMD MARKING CODE w6

Abstract: SMD TRANSISTOR MARKING 5H
Contextual Info: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b
Contextual Info: PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: MOSFET TRANSISTOR SMD MARKING A1 MOSFET TRANSISTOR SMD MARKING CODE 11 PMFPB6545 smd transistor marking y1
Contextual Info: PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT: fT=400MHz. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic

Contextual Info: DF N2 020 D-3 PBSS4330PAS 30 V, 3 A NPN low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic

pc817 sharp

Abstract: EN55022 limits smd transistor E13 viper 22e flyback transformer eldor GRM40X7R104Z50 UEI 10SP050L Varistor uei SMD-C9 n27 ferrite
Contextual Info: AN2264 APPLICATION NOTE Three-Phase SMPS for low power applications with VIPer12A Introduction Some industrial applications require a so called 'ultra-wide' input voltage range between 90 and 450Vac . Due to the variations of the main, input voltages up to 450Vac are typical in threephase applications. A maximum input voltage of 450Vac requires the use of very high voltage

MOSFET TRANSISTOR SMD MARKING A1

Abstract: P-channel Trench MOSFET SOT1118
Contextual Info: PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using

Contextual Info: Radiation Hardened 8-Channel Source Driver IS-2981RH, IS-2981EH Features The Star*Power Radiation Hardened IS-2981RH, IS-2981EH are monolithic devices designed for use in high-side switching applications that benefit from separate grounds for the logic and loads. The devices have a 5V to 80V operating supply

MIL-PRF-38534

Abstract: smd transistor marking y2 smd INCOMING INSPECTION procedure TRANSISTOR SMD catalog Y1 MILPRF-38534
Contextual Info: HERMETIC/HI-REL OPTOCOUPLERS H Hermetic and Hi-Rel Optocouplers For Military, Space, Life Critical and High Reliability Applications H and Class K product on QML38534. Choose from Hewlett-Packard’s broad line of high performance optocouplers to meet your

HS-OP470ARH

Contextual Info: Radiation Hardened, Very Low Noise Quad Operational Amplifiers HS-OP470ARH, HS-OP470AEH Features The HS-OP470ARH, HS-OP470AEH are a radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

Contextual Info: Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch HS-201HSRH, HS-201HSEH Features The HS-201HSRH, HS-201HSEH are monolithic CMOS analog switch featuring power-off high input impedance, very fast switching speeds and low ON-resistance. Fabrication on our

SMD SOT23 transistor MARK Y1

Abstract: TL431 smd marking smd transistor marking d10 smd transistor marking D9 X10 smd fuses MARKING SMD PNP TRANSISTOR R 1206 Zener diode smd marking c6 zener DIODE smd color marking smd transistor marking r14 NF marking TRANSISTOR SMD c4
Contextual Info: TND320/D Rev. 0, Feb-07 40 W Printer Power Supply Reference Design Documentation 1 2007 ON Semiconductor. Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this

lm358n

Abstract: ti MARKING CODE LM358 LM2904N LM258N LM358H vco lm358n LM358AM LM358AMX LM358T TRANSISTOR SMD MARKING CODE 1v
Contextual Info: LM158-N, LM258-N, LM2904-N, LM358-N www.ti.com SNOSBT3G – MAY 2004 – REVISED OCTOBER 2005 LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers Check for Samples: LM158-N, LM258-N, LM2904-N, LM358-N FEATURES UNIQUE CHARACTERISTICS • • 1 2

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 1 — 18 January 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using

PTF141501A

Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
Contextual Info: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.