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    SMF12100

    Contextual Info: SMF-12100 ELECTRO NICS Sam sung M icrow ave Sem iconductor Gain Optimized GaAs FET 2-20 GHz Description Features The SM F-12100 is a 1200 nm n-channel M E S F E T with 0.5 urn gate length, utilizing Sam sung M icrowave’s gain optimized G 10 process. Ti/Pt/Au gate metallization and


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    SMF-12100 F-12100 7U4142 SMF12100 PDF