SMJ444 Search Results

TS-2321

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D - JANUARY 1991 - REVISED JUNE 1995 Processed to MIL-STD-883, Class B Organization. . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A CCESS ACCESS A CCESS

g23 SMD Transistor

Abstract: smd marking JD SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

SMJ44400

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D – JANUARY 1991 – REVISED JUNE 1995 D D D D D D D D D D D D D Processed to MIL-STD-883, Class B Organization . . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges:

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY S G M S 0 4 1 B -JA N U A R Y 19 9 1 -R E V IS E D JULY 1991 JD A N D HR P A C K A G E S t TOP VIEW Processed to MIL-STD-883, Class B Military Temperature Range . . . - 5 5 to 125°C C 1 C 2 w C3

smd marking g23

Abstract: 5962-9084703MXA smd marking JD JD smd RAS 0910 g23 SMD Transistor marking g23 SMD SMJ44400 jdm 11
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY S G M S 0 4 1 0 -J A N U A R Y 1991 -R E V IS E D JUNE 1995 Processed to MIL-STD-883, Class B JD B OR HR PACKAGES TO P V IEW Organization . . . 1 048 576 x 4 Single 5-V Power Supply (±10% Tolerance)

SMJ44400

Abstract: smd marking JD 5962-9084703MXA
Contextual Info: DRAM SMJ44400 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc FEATURES • Organized 1,048,576 x 4

Contextual Info: SMJ44400 1,048,576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY x JD PACKAGE 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) Performance Ranges: DQ1 [ 1 ACCESS ACCESS ACCESS TIME TIME TIME S M J444 00-10 S M J444 00-12 SM J44400-15 U (R ) l a(C )

smd marking JD

Contextual Info: DRAM SMJ44400 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc FEATURES • Organized 1,048,576 x 4

SMJ44400

Contextual Info: SMJ44400 1 048 576 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D – JANUARY 1991 – REVISED JUNE 1995 D D D D D D D D D D D D Processed to MIL-STD-883, Class B Organization . . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges:

SMJ44400

Abstract: ras 0610
Contextual Info: 0 4 199! SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041B — JANUARY 1991 — REVISED JULY 1991 MIL-STD-883C, Class B High Reliability Processing Military Temperature Range . . . - 55°C to 125°C Organization . . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance

ha814

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041 — JANUARY 1991 •55 to JD and H R P ackage Top View DQ1 C 1 2 DQ2 • MIL-STD-883C, Class B, Hlgh-Rellablllty Processing • Single 5-V Power Supply (±10% Tolerance) • Performance Ranges:

Contextual Info: SMJ44400 1048 576 BY 4-BIT DYNAMIC RANDOM-ACCiSS MEMORY _SGMS0A1D - JANUARY 1891 - REVISED JUNE 1985 • • Processed to MIL-STD-883, Class B Organization . . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS

SMD Transistor g25

Abstract: smd marking JD 21D0 g23 SMD Transistor SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Organized 1,048,576 x 4

SM4181

Abstract: SMJ416160-70HKDM SMJ416160-80HKDM SMJ418160-70HKDM SM418 5962-90617 SMJ418160-80HKDM
Contextual Info: Fact Sheet M I l I t a r y S e m I c o n d u c t o r P r o d u c t s SMJ416160/SMJ418160 SGYV012, May 1996 1048576-WORD BY 16-BIT HIGH-SPEED DRAM HIGHLIGHTS The SMJ41x160 series is a set of high-speed, 1677216-bit dynamic random-access memories DRAMs organized as 104876 words of 16 bits each. These devices feature maximum RAS

MT4C4001JEC8

Abstract: qml-38535 SMJ44400-80JDM SMJ44400
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R031-93. 92-11-24 M.A. Frye B Changes in accordance with NOR 5962-R205-95. 95-12-15 M.A. Frye C Update and make changes to case outline N. Update boilerplate. Editorial changes throughout.

TSMC 0.18 um MOSfet

Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Contextual Info: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A