SONOS Search Results

sonos Cypress Semiconductor

Abstract: sonos SONOS flash memory
Contextual Info: Press Release CYPRESS ACQUIRES SONOS TECHNOLOGY FOR EMBEDDED NON-VOLATILE MEMORY INTEGRATION Cost-Effective Technology to be Used in Microcontrollers, Timing Generators SAN JOSE, Calif., September 14, 1999 - Cypress Semiconductor Corp. NYSE:CY today announced

IRf 447 MOSFET

Abstract: TO-25X smd diode IF
Contextual Info: Application Note AN-1016 Hermetic Surface-Mount Discrete Semiconductor, Solutions to Assembly Integration By Tiva Bussarakons Table of Contents Page Introduction . …….2

Contextual Info: CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B 64-Kbit 8 K x 8 SPI nvSRAM 64Kbit (8K×8) SPI nvSRAM 特長 „ 元々8K×8として編成された64Kbitの不揮発性 SRAM (nvSRAM) ˆ パワーダウン時に AutoStore( 自動的ストア開始 ) するか

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

P-18585

Abstract: DS1233
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1233 Oct-96 9644 A5 CARSEM DM635839AAA 1.2µ NITRIDE 03 SOT223 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

16875

Abstract: ds1232 P-16852 16876
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1232 Jan-96 9547 C1 ANAM, K. DN537172ABA 3.0µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : HTC Vapor Phase P-16818 READPOINT (Sample Size/No. of Fails)

Contextual Info: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8

8-Channel opamp mux

Abstract: high level block diagram for eeprom simple switch block diagram TEMPERATURE DEPENDENT DC FAN SPEED CONTROL usb flash drive block diagram 12 volts Voltage Doubler project 3.3v supply opamp ELP 02V error multiplexer comparator parity microcontroller based temperature control fan
Contextual Info: PRELIMINARY CY8CNP102B, CY8CNP102E Nonvolatile Programmable System-On-Chip nvPSoC Overview The Cypress nonvolatile Programmable System-On-Chip (nvPSoC) processor combines a versatile Programmable System-on-Chip (PSoC ) core with an infinite endurance

DC04 display

Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt
Contextual Info: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS5002 Apr-97 9712 M3 ANAM, K. DN507374ABY 1.2µ OX/NI 80 PQFP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

an 17820

Abstract: DS2107A
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jul-96 9623 A6 ANAM, K. DN604282AAB1 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

P-20460

Abstract: 20461 DS2181A
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2181A Aug-97 9728 A2 ANAM, K. DN722742ABB 2.0µ OXIDE 44 PLCC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): T/C: -55°C to +125°C, 10~

hot electron devices

Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst
Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li

7C83900A

Abstract: CY22393 CY22394 CY22395 SONOS flash memory
Contextual Info: CY22390WAF Three-PLL Serial Programmable FLASH Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to three unique frequencies on up to six outputs from an external source PLLs Ultrawide divide counters (8-bit Q, Allows for 0-ppm frequency generation and frequency conversion under the most

DS12885

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS12885 Nov-95 9538 A2 ANAM, K. DN531869AAD1 1.2µ OX/NI 24 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

21103

Abstract: transistor HR DS1267 p21105 HR 250 P21103 P-21105
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Nov-97 9737 A1 ANAM, PI. DK727730AAA 1.2µ OX/NI 20 TSSOP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): 0 Hr

DS1267

Abstract: P-17298
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Apr-96 9612 A1 HYUNDAI DL603183AAL 1.2µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : HTC Vapor Phase P-17251 READPOINT (Sample Size/No. of Fails)

VC1037

Abstract: ELP 02V AN2015 LOAD CELL psoc psoc c code for ring counter
Contextual Info: PRELIMINARY CY8CNP102B, CY8CNP102E Nonvolatile Programmable System-on-Chip PSoC NV Overview • The Cypress nonvolatile Programmable System-on-Chip (PSoC® NV) processor combines a versatile Programmable System-on-Chip (PSoC) core with an infinite endurance

Contextual Info: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

equivalent transistor TT 3034

Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

CY14X101PA

Contextual Info: CY14C101PA CY14B101PA CY14E101PA 1-Mbit 128 K x 8 Serial (SPI) nvSRAM with Real Time Clock 1-Mbit (128 K × 8) Serial (SPI) nvSRAM with Real Time Clock Features • Write protection ❐ Hardware protection using Write Protect (WP) pin ❐ Software protection using Write Disable instruction

Contextual Info: 512-Kbit 64 K x 8 Serial (SPI) nvSRAM 512-Kbit (64 K × 8) Serial (SPI) nvSRAM Features • ■ 512-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 64 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

Contextual Info: CY14B256Q1 CY14B256Q2 CY14B256Q3 256-Kbit 32 K x 8 Serial (SPI) nvSRAM 256-Kbit (32 K × 8) Serial (SPI) nvSRAM Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14C512Q CY14B512Q CY14E512Q 512-Kbit 64 K x 8 SPI nvSRAM 512-Kbit (64 K × 8) SPI nvSRAM Features • ■ 512-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 64 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated