SONY CHEMICAL Search Results

EMERGENCY OFF PUSH BUTTON

Abstract: QN-001AC SONY car service manual circuits QN-008CLA CAR SECURITY SYSTEMS VIA DTMF QN-029BPL QN029BPL car service manual
Contextual Info: 3-862-046-11 1 CM-Z100 Portable PCS Telephone Operating Instructions SONY Wireless Hotline Number (USA only) If you have any questions or comments, please call: SONY WIRELESS HOTLINE 1-800-578-SONY (7669) 1998 Sony Electronics Inc. All rights reserved.

SS-M9ED

Abstract: Ultrasonic Cleaning Transducer 80 watt woofer circuit woofer schematic ULTRASONIC cleaning transducers 80 Hz crossover loudspeaker SONY AUDIO CROSSOVER schematic cnc wiring medium density fibreboard
Contextual Info: SS-M9ED LOUDSPEAKER SYSTEM TECHNICAL DESCRIPTION 1999 Sony Electronics, Inc. Reproduction in whole or in part is prohibited without written permission. All rights reserved. Sony and Direct Stream Digital are trademarks of Sony. The SS-M9ED was designed to be an extremely high resolution, accurate and neutral

sony 0642

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron

Contextual Info: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron

SGH5002F

Abstract: sony fl 901 M253 SGH5002F-01 SGH5002 SGH5002F-02 M2531 SGH5002F-05
Contextual Info: SONY CORP/COnPONENT PRODS M^E 3 • 5365353 SONY. S G 0DD31g7 H b » S O NY 5 0 0 2 F 1 AIGaAs/GaAs Low Noise Microwave HEM T Preliminary Description Package Outline Unit : mm SG H 5002F is an AIGaAs/GaAs HEM T fabricated by M O C V D Metal Organic Chemical Vapor

SONY hemt

Abstract: SGH5003F 12GHz 462-2 MAG SGH5003Ft6 SGH5003F01 130 sony sony 1217
Contextual Info: SONY C O R P / C O M P O N E N T PR OD S 4TE D Ô3fi23â3 0 0 0 3 1 3 1 ô « S O N Y SGH5003F SONY« AIGaAs/GaAs Low Noise Microwave HEMT, D escriptib it Package Outline * 7 “ ^ SGH5003F is an AIGaAs/GaAs HEMT fabricated by MOCVD M etal O rganic Chemical Vapor

SONY A 2509

Contextual Info: SONY C O R P / C O M P O N E N T P R O D S 0385303 0003135 S « S O N Y 4HE D SGH5612F SONY f — 2 5— A IG aA s/G aA s Low Noise Microwave, H EM T Description SGH5612F is an AIG^As/GaAs HEMTfabricatedby MOCVD Metal Organic Chemical Vapor Deposi­ tion . This HEMT features very low noise figure and

2 Wavelength Laser Diode

Abstract: SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO
Contextual Info: _ SLD304V SONY, lOOOmW High Power Laser Diode Description Package O utline Unit: mm SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output

Contextual Info: SLD304V SONY» lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline

Laser Diode 1550 nm

Abstract: SLD304
Contextual Info: SLD304V SONY, lOOOmW High Power Laser Diode Package Outline Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current

Contextual Info: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline

SONY 171

Contextual Info: SONY SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 90mW

SONY 171

Abstract: Sony laser
Contextual Info: SONY SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 180mW

oJ-50

Abstract: TCA 785 SLD302V SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-3 laser diode cd sony
Contextual Info: SLD302V SONY, 200mW High Power Laser Diode Description SLD302V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Package Outline Unit: mm R•f •r«nct Features • High power Recommended power output Po=180mW

Contextual Info: SLD301V SONY. l O O m W High Power Laser Diode Description SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Po=90mW

2SK676

Abstract: GaAs FET HEMT Chips
Contextual Info: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high

Contextual Info: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current

SLD301V-21

Abstract: SLD301V SLD301 SLD301V-2 SLD301V-3 1R1H
Contextual Info: SLD301V SONY lO O m W High Power Laser Diode Description Package O utline U nit: mm SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current

laser diode 780 nm cd

Abstract: sony tc SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 15C200
Contextual Info: SONY _ S L D 3 4 V | lOOOmW High Power Laser Diode_ For the availability of this product, please contact the sales office? D e scrip tio n SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD.

SONY 171

Contextual Info: SONY SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which

Contextual Info: SONY SLP323V High Power Density 1 W Laser Diode Package Outline_Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method*’ . Compared to the R tr« SLD300 Series, this laser diode has a high brightness

Contextual Info: SONY CXD2302Q 8-bit 50MSPS Video A/D Converter with Clamp Function Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp tunction. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate

Contextual Info: SLD301V SONY. lO O m W High P o w e r L aser Diode D e sc rip tio n SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. M O C V D : Metal Organic Chemical Vapor Deposition F e a tu re s • High power Recommended power output • Small operating current

2SK566

Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
Contextual Info: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET