SOT MARKING 2A Search Results

2AX sot-23

Abstract: marking 2AX sot-23 MARKING 2Ax 2A MARKING SOT23 MARKING 2A MARK 2A marking 2A sot23
Contextual Info: SEMICONDUCTOR Z02W2.0V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 2AX No. 1 Item Marking Device Mark 2A Z02W2.0V Voltage Grade X X,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

FMMT3903

Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS Device Type Standard marking BCV71 K7 BCV72 K8 BCW29 C1 C2 BCW30 BCW31 TRANSISTORS Reverse Joggle m arking Device Type K6 K9 C4 Standard marking Reverse Joggle marking BFQ31 S2 S3

MMBT3904 jiangsu

Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER

Marking 2A

Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Contextual Info: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

FMMT2222A

Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES  Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT591 SOT-23 TRANSISTOR PNP FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol

FMMT491

Abstract: 491 marking transistor Marking 491 power ic 5v 1A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol

PXT3906

Abstract: PXT3904
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 1 2. COLLECTOR 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2A MARKING SOT23

Contextual Info: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: PXT3906 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 3. EMITTER 2 Features — Compliment to PXT3904 — Low current — Low voltage B 2.6 4.25 2.4 3.75 0.8 MIN 0.44 0.37 MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 4.6 4.4 1.8

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Marking 491

Abstract: fmmt491
Contextual Info: FMMT491 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage

power ic 5v 1A

Contextual Info: FMMT591 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage

SSN2N7002A

Contextual Info: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A

LE 79A

Abstract: diode MARKING CODE 917 a915 BAS79D
Contextual Info: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C

bt 44a

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2305 P-Channel 8-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S5