SOT R23 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

SOT R23

Abstract: 2SC3356 marking R24 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current

transistor R24

Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
Contextual Info: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

inverter charger

Abstract: LTC1759 LT1461 circuit diagram of smart home alarm system linear ramp technique dvm principle working LT1306 LT1782 LT1783 LTC1642 LTC1755
Contextual Info: LINEAR TECHNOLOGY TECHNOLOG TECHNOLOGY NOVEMBER 1999 IN THIS ISSUE… COVER ARTICLE SOT-23 Micropower, Rail-to-Rail Op Amps Operate with Inputs above the Positive Supply . 1 Raj Ramchandani Issue Highlights . 2

AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter

Abstract: schematic diagram 48V solar charge controller solar inverters schematic diagram 555 timer for buck boost converter flash schematic diagram inverter 12v to 24v 30a resonant self oscillation half bridge LED ballast solar charger schematic 24V 48v battery charger schematic diagram Siliconix DataBook circuit diagram for 48v automatic battery charger
Contextual Info: LINEAR TECHNOLOGY FEBRUARY 2001 IN THIS ISSUE… COVER ARTICLE New 5-Lead SOT-23 Oscillator is Small, Very Stable and Easy to Use . 1 Andy Crofts Issue Highlights . 2 VOLUME XI NUMBER 1

panasonic inverter dv 707 manual

Abstract: 48v battery charger schematic diagram 12v step-down transformer operations files IBM R 31 laptop ac adapter schematics diagram schematic diagram of laptop inverter motorola power fet rf databook panasonic inverter manual dv 707 apple laptop battery pinout lcd inverter sumida notebook schematic samsung laptop battery pinout
Contextual Info: LINEAR TECHNOLOGY NOVEMBER 1999 IN THIS ISSUE… COVER ARTICLE SOT-23 Micropower, Rail-to-Rail Op Amps Operate with Inputs above the Positive Supply . 1 Raj Ramchandani Issue Highlights . 2 LTC in the News… . 2

marking r25 NPN

Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.

transistor code R24

Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
Contextual Info: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier

MPC5673

Abstract: mpc5675 HVD1 MPC5674 mpc5604 MPC5675K lpddr LVCO MPC567 MPC5673K
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MPC5675K Rev. 5, 12/2011 MPC5675K MPC5675K Microcontroller Data Sheet MAPBGA–225 15 mm x 15 mm QFN12 ##_mm_x_##mm SOT-343R ##_mm_x_##mm PKG-TBD ## mm x ## mm 473 MAPBGA 19 x 19 mm

pin diagram for IC cd 1619 cp in fm

Abstract: MPC5675K VA1C 217A1 3-Phase PWM AC Motor Driver IC e200z7 mpc5675 MPC5673
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MPC5675K Rev. 6, 2/2012 MPC5675K MPC5675K Microcontroller Data Sheet MAPBGA–225 15 mm x 15 mm QFN12 ##_mm_x_##mm SOT-343R ##_mm_x_##mm PKG-TBD ## mm x ## mm 473 MAPBGA 19 x 19 mm

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

FJV3103R

Abstract: FJV4103R
Contextual Info: FJV3103R FJV3103R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

2SC4226

Contextual Info: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View

pin diagram for IC cd 1619 cp in fm

Abstract: MPC5675K Radar sensor SRM mpc5675
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: MPC5675K Rev. 6.1, 3/2012 MPC5675K MPC5675K Microcontroller Data Sheet MAPBGA–225 15 mm x 15 mm QFN12 ##_mm_x_##mm SOT-343R ##_mm_x_##mm PKG-TBD ## mm x ## mm 473 MAPBGA 19 x 19 mm 1 1

2SC3356

Abstract: R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q
Contextual Info: 2SC3356 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES    SOT-23 Low Noise Amplifier at VHF, UHF and CATV band Low Noise and High Gain High Power Gain

2sc4226

Abstract: NPN Silicon Epitaxial Planar Transistor 2SC4226 APPLICATION NOTES
Contextual Info: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: FJV3103R FJV3103R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit