SOT-143 RF AMPLIFIER Search Results

Contextual Info: MicroAmp MB-3 Circuit Board For SOT-143 Amplifiers FEATURES • Fits SOT-143 amplifier packages • Input/Output blocking capacitors • RF bypass and bias capacitors • Dual bias resistors • RF bias inductor • RO-4350 board material • Fits MicroAmp MH-series housings

sot-143 rf amplifier

Abstract: 2SC5097
Contextual Info: 2SC5097 NPN 10 GHz RF Wideband Transistor P b Lead Pb -Free FEATURES: * SOT-143 package * Low noise figure * High power gain SOT-143 APPLIEATION: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC) Symbol VCBO VCEO Rating Collector-Base Voltage

Contextual Info: BFP280T / BFP280TW / BFP280TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. SOT-143 3 4 2 Mechanical Data Typ: BFP280T Case: SOT-143 Plastic case

MG MARKING

Contextual Info: BFP280T / BFP280TW / BFP280TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. SOT-143 3 4 2 Mechanical Data Typ: BFP280T Case: SOT-143 Plastic case

382 1500

Abstract: BFP93A BFP93AW transistor j02 527
Contextual Info: BFP93A / BFP93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range. 2 1 SOT-343 Mechanical Data Typ: BFP93A

ac 1084 0515

Contextual Info: BFP93A / BFP93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range. 2 1 SOT-343 Mechanical Data Typ: BFP93A

rf attenuator soic

Abstract: DC bias of FET 2 watt fet DC bias of gaas FET GHz Power FET
Contextual Info: Section 1 RF GaAs MMIC Products in Plastic Packages Table of Contents GaAs MMIC Control FET in SOT 143 DC-2.5 GHz . 1-4 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz .

Contextual Info: BFP182T / BFP182TW / BFP182TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at

transistor w 431

Contextual Info: BFP92A / BFP92AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range specially for wide band antenna amplifier.

BFP196TW

Abstract: BFP196T BFP196TR
Contextual Info: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour 3 4 2 1 Applications SOT-143R For low noise, low distortion broadband amplifiers in

83P sot-143

Abstract: MG MARKING
Contextual Info: BFP183T / BFP183TW / BFP183TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency fT = 8 GHz 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at

274 231

Abstract: 955 539 ic
Contextual Info: BFP 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143

BFP93A

Contextual Info: BFP93A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 3 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter

mg sot-143

Abstract: BFP280T BFP280TRW BFP280TW
Contextual Info: BFP280T / BFP280TW / BFP280TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC SOT-143 e3 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at

Contextual Info: BFP 93 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter

955 539 ic

Abstract: BFP81
Contextual Info: BFP81 Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter

marking W18

Abstract: BFP181TRW BFP181TW BFP181T vishay MARKING UM
Contextual Info: BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • SOT-143 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 SOT-343

w19 transistor

Abstract: npn transistor w19 marking W19
Contextual Info: BFP193T / BFP193TW / BFP193TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications SOT-343 For low noise and high gain applications such as

marking W18

Abstract: SOT W18 transistor w18 BFP181TR MG MARKING BFP181TRW
Contextual Info: BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • SOT-143 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 SOT-343

irf 4427 s

Abstract: IS22I A 2232 0003 irf 1642 IRF 4925 irf 709 14029
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line G eneral Purpose RF Cascode A m plifier The MRFIC0916 is a cost-effective, high isolation cascode silicon mono­ lithic amplifier in the industry standard SOT-143 surface mount package de­ signed for general purpose RF applications. On chip bias circuitry sets the

Contextual Info: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This

BFP92A

Contextual Info: BFP92A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter

80846

Abstract: 022241 gummel
Contextual Info: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143

marking 557 SOT143

Contextual Info: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This