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    SOT-23 B14 Search Results

    SOT-23 B14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 B14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3739 SOT-23-3L TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage


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    PDF OT-23-3L 2SC3739 OT-23-3L 150mA 500mA 500mA,

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


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    PDF CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. EMITTER 2. BASE 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current


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    PDF OT-23-3L OT-23-3L 2SC3739 150mA 500mA 500mA,

    a13 sot23-5

    Abstract: sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5
    Text: t s e all r o t a r a p m o C & SPRING p m Sm SI SC7 NGLE 0-5/ SOT +IN 1 23-5 Op A in D l r o W e h t s ’ e s On thi for V- 2 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 LMV824 A UT O • Rail-to-Rail Output 50% Smaller than SOT-23 Supply Operation build an we


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    PDF LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 OT-23 a13 sot23-5 sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5

    TTL 7400 national semiconductor

    Abstract: sine wave generator using LM358 a13 marking sot23 eme marking sot23 lm358 sum LMV321 LMV321M5 LMV324 MAL LM393 LMV339
    Text: t s e l mal r o t a r a p m o C & SPRING p m S SI SC7 NGLE 0-5/ SOT +IN 1 23-5 Op A in D l r o the W s ’ e n s O thi for V- 2 Click Here For Web Info LMV321 LMV331 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 LMV824 1 SOT-23 + 8 V TB 6 IN B 7 OU A – + A - 2


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    PDF LMV321 LMV331 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 OT-23 TTL 7400 national semiconductor sine wave generator using LM358 a13 marking sot23 eme marking sot23 lm358 sum LMV321M5 MAL LM393 LMV339

    zener Z6 SOT23-6

    Abstract: No abstract text available
    Text: BZX84C2V4 - BZX84C39 CREAT BY ART 300mW, Surface Mount Zener Diode Small Signal Product Features SOT-23 ◇ Planar die construction ◇ 300 mW power dissipation ◇ Zener voltages from : 2.4V - 39V ◇ Ideally suited for automated assembly processes Mechanical Data


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    PDF BZX84C2V4 BZX84C39 300mW, OT-23 OT-23, J-STD-020 MIL-STD-202, zener Z6 SOT23-6

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


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    PDF MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


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    Untitled

    Abstract: No abstract text available
    Text: EMC1001 1.5°C SMBus Temperature Sensor in Miniature SOT-23 PRODUCT FEATURES Datasheet Features General Description ̈ The EMC1001 is a tiny SMBus temperature sensor with ±1.5°C accuracy and two interrupts. Packaged in a SOT23-6, the EMC1001 provides an accurate, low-cost,


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    PDF EMC1001 OT-23 EMC1001 OT23-6, MO-178 EMC1001,

    Untitled

    Abstract: No abstract text available
    Text: EMC1001 1.5°C SMBus Temperature Sensor in Miniature SOT-23 PRODUCT FEATURES Datasheet General Description Features • The EMC1001 is a tiny SMBus temperature sensor with ±1.5°C accuracy and two interrupts. Packaged in a SOT23-6, the EMC1001 provides an accurate, low-cost,


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    PDF EMC1001 OT-23 OT23-6, EMC1001 MO-178 EMC1001,

    sot23 fd

    Abstract: No abstract text available
    Text: EMC1001 1.5°C SMBus Temperature Sensor in Miniature SOT-23 PRODUCT FEATURES Datasheet General Description Features • The EMC1001 is a tiny SMBus temperature sensor with ±1.5°C accuracy and two interrupts. Packaged in a SOT23-6, the EMC1001 provides an accurate, low-cost,


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    PDF EMC1001 OT-23 OT23-6, MO-178 EMC1001 EMC1001, sot23 fd

    sot-23 Marking 2F

    Abstract: No abstract text available
    Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Product Features SOT-23 ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant


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    PDF MMBT2907A 350mW, OT-23 MIL-STD-202, C/10s sot-23 Marking 2F

    EMC1001-0-ZM

    Abstract: EMC1001 EMC1001-1-ZM MO-178 DIODE SOT23 011B
    Text: EMC1001 1.5°C SMBus Temperature Sensor in Miniature SOT-23 PRODUCT FEATURES Datasheet General Description Features • The EMC1001 is a tiny SMBus temperature sensor with ±1.5°C accuracy and two interrupts. Packaged in a SOT23-6, the EMC1001 provides an accurate, low-cost,


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    PDF EMC1001 OT-23 EMC1001 OT23-6, MO-178 EMC1001, EMC1001-0-ZM EMC1001-1-ZM DIODE SOT23 011B

    EMC1001

    Abstract: EMC1001-1-AFZQ-TR EMC1001-AFZQ-TR MO-178
    Text: EMC1001 1.5°C SMBus Temperature Sensor in Miniature SOT-23 PRODUCT FEATURES Datasheet General Description Features „ The EMC1001 is a tiny SMBus temperature sensor with ±1.5°C accuracy and two interrupts. Packaged in a SOT23-6, the EMC1001 provides an accurate, low-cost,


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    PDF EMC1001 OT-23 EMC1001 OT23-6, MO-178 EMC1001, EMC1001-1-AFZQ-TR EMC1001-AFZQ-TR

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


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    PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    N-Channel

    Abstract: No abstract text available
    Text: TSM2328 100V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 100 V RDS on (max) 250 mΩ Qg 11.1 nC Block Diagram Features ● Low RDS(ON) 250mΩ (Max.) ● Low gate charge typical @ 11.1nC (Typ.)


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    PDF TSM2328 OT-23 TSM2328CX 900ppm 1500ppm 1000ppm N-Channel

    DS493

    Abstract: No abstract text available
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP


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    SMD SOT23 b12

    Abstract: b13 smd b14 smd smd marking b12 ON B14 PT-200 2SC3739 marking B14 SOT
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC3739 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 High gain bandwidth product: fT=200MHz. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF 2SC3739 OT-23 200MHz. -20mA 500mA 150mA SMD SOT23 b12 b13 smd b14 smd smd marking b12 ON B14 PT-200 2SC3739 marking B14 SOT

    2SC3739

    Abstract: marking b14 sot
    Text: 2SC3739 2SC3739 TRANSISTOR NPN SOT-23-3L FEATURES 1. EMITTER 2. BASE 3. COLLECTOR Power dissipation 0.2 W (Tamb=25℃) 1. 02 PCM: 2. 80¡ À0. 05 0. 95¡ À0. 025 0. 35 1. 9 1. 60¡ À0. 05 2. 92¡ À0. 05 Collector current ICM: 0.5 A Collector-base voltage


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    PDF 2SC3739 OT-23-3L 150mA 500mA 500mA, 2SC3739 marking b14 sot

    ST1536

    Abstract: st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556
    Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910010-24 FR FAMILY EVALUATION BOARD SK-91460-MAIN V1.2 USER GUIDE This manual refers to PCB version V1.2 SK-91460-MAIN v1.2 Revision History Revision History Date 15.06.2005 22.06.2005 06.07.2005 18.07.2005


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    PDF FMEMCU-UG-910010-24 SK-91460-MAIN ST371 UG-910010-24 32bit) ST1536 st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


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    PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA

    CF300

    Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
    Text: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


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    PDF 50B4DIN41867 569-GS CF300 CF-300 telefunken mosfet marking code g1s transistor bf 222

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS im m ly iE ITI XiEinx has acquired the entire Philips CoolRynner Low Power CPLD Product Family, For more technical or sales information, piease see: wwWsXilinKsCom XCR3032 32 macrocell CPLD Product specification Supersedes data of 1997 Feb 20


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    PDF XCR3032 XCB3032 PZ3032 OT376-1

    Untitled

    Abstract: No abstract text available
    Text: Lumineszenzdioden Light Emitting Diodes LED-Typenbezeichnungsschema LED type designation system 2"" and 3 rd letter for the color of all MULTILED pa ckage outlines higher w avelength = first letter, - -> lower w avelength = seco nd and third letter


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    PDF OT-23 B143-B6338, B143-H6358-G1-X7400) B143-B6338-X-X7600, 1-X-7400)