SOT-23 MARKING 2S Search Results

2SA1179

Abstract: 10u 35v
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

10u 35v

Abstract: 2SA1179 sot 23 PNP
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

MARKING SY SOT23

Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . High breakdown voltage 1 1. BASE 2 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

2SC2412

Abstract: marking FQ 2SA1037 transistor marking fq
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

marking BS sot23

Abstract: marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

2SA1036

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1036 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES ∙ Large IC. ICMax.= -500 mA ∙ Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR

2SA1162

Abstract: 2SC2712
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

2SA1037AK

Abstract: 2SC2412K transistor marking fq
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1037AK SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE linearity. z Complments the 2SC2412K. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA1036K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1036K SOT-23-3L TRANSISTOR PNP FEATURES z Large IC. IC= -500 mA z Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1036 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Large IC. ICMax.= -500 mA ∙ Low VCE(sat). Ideal for low-voltage operation. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2412K

Abstract: 2SA1037AK
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC2412K SOT-23-3L TRANSISTOR NPN FEATURES z Low Cob ,Cob = 2.0 pF (Typ). z Complements the 2SA1037AK 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD2142 TRANSISTOR NPN SOT–23 FEATURES  Darlington Connection for a High hFE  High Input Impedance MARKING: R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA1179

Abstract: transistor marking 3k
Contextual Info: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1013 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURE y High voltage y Large continuous collector current capability 2. COLLECTOR 1 2 23 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted )

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

2sa198

Abstract: 2SC5344S 2SA1981S
Contextual Info: 2SA1981S Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S Ordering Information Type NO. Marking 2SA1981S Package Code SOT-23 EA : hFE rank Outline Dimensions

2SC5344S

Abstract: 2SA1981S characteristic
Contextual Info: 2SC5344S Semiconductor NPN Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981S Ordering Information Type NO. Marking 2SC5344S Package Code SOT-23 FA : hFE rank Outline Dimensions

Contextual Info: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

2SD2142

Contextual Info: 2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. High input impedance. A L 3 3 C B Top View MARKING