SOT-23 R25 Search Results

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

STR2550

Abstract: STR1550
Contextual Info: STR2550 High voltage fast-switching PNP power transistor Preliminary data Features • Miniature SOT-23 plastic package for surface mounting circuits ■ Tape and reel packaging ■ The NPN complementary type is STR1550 3 2 1 Applications ■ SOT-23 LED driving

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current

transistor R24

Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
Contextual Info: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

FH9014

Abstract: FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16
Contextual Info: SOT-23 三极管（SOT-23 TRANSISTORS） 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C

Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

2SC3356

Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

Contextual Info: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

marking r25

Abstract: FJV3105R FJV4105R
Contextual Info: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking

resistor cross reference

Abstract: marking r25 sot23 FJV3105RMTF
Contextual Info: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking

Contextual Info: STR2550 High voltage fast-switching PNP power transistor Datasheet - production data Features • Excellent hFE linearity up to 50 mA • Miniature SOT-23 plastic package for surface mounting circuits 3 • Tape and reel packaging 2 • The NPN complementary type is STR1550

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

NTC 503 3950

Contextual Info: NTGM Series High Accuracy NTC Thermistors Features  Micro MELF glass package, saving space  Fits onto SOD 323/SOT 23 footprints  Fast response time  High reliability and high moisture proof  Wide range of operating temperature from -50℃ up to 300℃

5C0A

Abstract: AD1585BRTZ SOT-23 R2C SOT23 transistor R2C 3a0a transistor R1Z AD1582ARTZ AD1582 AD1582CRTZ-REEL7
Contextual Info: a 2.5 V to 5.0 V Micropower, Precision Series Mode Voltage References AD1582/AD1583/AD1584/AD1585 FUNCTIONAL BLOCK DIAGRAM 3-Lead SOT-23 RT Suffix FEATURES Series Reference (2.5 V, 3 V, 4.096 V, 5 V) Low Quiescent Current: 70 �A max Current Output Capability: �5 mA

2SC3356 Application Note

Abstract: 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23
Contextual Info: 2SC3356 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 A

Contextual Info: 2SC3356 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 2 BASE 1 2 1 EMITTER FEATURES SOT-23 * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

DS493

Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP

Contextual Info: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3

SMD transistor r24

Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz

2SC3356 SMD

Abstract: marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain.