SOT-23 ZF Search Results

LRB411DLT1G

Abstract: LRB411DLT3G MARKING D3E
Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 2 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. SOT– 23 zConstruction Silicon epitaxial planar z Pb-Free package is available

LRB421LT1G

Abstract: LRB421LT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G zApplications Low power rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE z We declare that the material of product

bpw21 op

Abstract: 2SK147 ir photodiode amplifier BPW21 fast photodiode amplifier FD1500W low noise ir photodiode amplifier tp 0401 2SK147 equivalent SFH213
Contextual Info: advertisement LT1806: 325MHz Low Noise Rail-to-Rail SOT-23 Op Amp Saves Board Space – Design Note 254 Glen Brisebois The new tiny LT 1806 combines 325MHz gain bandwidth, 3.5nV/√Hz voltage noise, 100µV input offset voltage and rail-to-rail inputs and outputs in a SOT-23 package.

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G S-LRB421LT1G zApplications Low power rectification 3 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 4) S- Prefix for Automotive and Other Applications Requiring

SOT-23 marking d3e

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G S-LRB411DLT1G zApplications Low current rectification 3 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 4) S- Prefix for Automotive and O ther Applications Req uiring

rkm sot-23

Abstract: rkm 21 rkm transistor RK7002 RKM 15 RK7002 equivalent 575mA2 RKM SOT
Contextual Info: RK7002 Transistors Interface and switching 60V, 115mA RK7002 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(5V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM

rkm sot-23

Abstract: rkm 21 RKM SOT rkm transistor rkm 05 RK7002 equivalent rkm rk7002 RK7002 rkm sot23
Contextual Info: RK7002 Transistors Interface and switching 60V, 115mA RK7002 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM

Contextual Info: MOTOROLA Order this document by MMBZ5V6ALT1/D SEMICONDUCTOR TECHNICAL DATA MMBZ5V6ALT1 * MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 5.6, 6.2 15 & 20 Volt SOT-23 Dual Monolithic Common Anode Zeners Motorola Preferred Devices Transient Voltage Suppressors for ESD Protection

Contextual Info: MMBT4126 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. E SOT-23 Mark: ZF B Ordering Information Part Number

SOT-23 Mark ZF

Abstract: Mark ZF SOT-23 ZF 2N5551S ZF marking ZF SOT23 sot 23 zf MARKING ZF SOT-23
Contextual Info: SEMICONDUCTOR 2N5551S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZF No. 1 Item Marking Device Mark ZF 2N5551S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

2N4126

Abstract: SOT-23 Mark ZF SOT-23 ZF 2N3906 MMBT4126 Mark ZF
Contextual Info: 2N4126 MMBT4126 SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents to 10 jiA as a switch and to 100 mA as an am plifier. Sourced from Process 66. See 2N3906 for

MARKING ZF SOT-23

Abstract: KDS184 kec marking SOT ZF SOT23 kec semiconductor marking SOT
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO-LTD KDS184 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forw ard Voltage F ast Reverse Recovery Time Small Total Capacitance : SOT-23.

SOT-23 ZF

Abstract: KDS226 MARKING ZF SOT-23 ZF SOT23
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREAELECTRONICSCO.,LTD. KDS226 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.). : Cr=0.9pF (Typ.). DIM MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage

baw56

Abstract: BAV99 application circuit bav99 BAV70 Diode bav99 Diode bav99 8 BAV99 application bav99 marking
Contextual Info: BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplication Ultra high speed switching 2.9±0.2 2.4±0.2 1.3+0.2 −0.1 ROHM : SSD3 EIAJ : − JEDEC : SOT-23

SOT-23 ZF

Abstract: 2N4126 SOT-23 Mark ZF 2N3906 MMBT4126
Contextual Info: 2N4126 MMBT4126 C E C TO-92 BE SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Sourced from Process 66. See 2N3906 for

sot-223 zf

Abstract: 2N4126 MMBT4126
Contextual Info: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*

Contextual Info: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*

SOT-23 Mark ZF

Abstract: SOT-23 ZF PN2222N 2N4126 CBVK741B019 F63TNR MMBT4126
Contextual Info: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*

Contextual Info: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) SOT-23 o- H3- o 3 2 EH M 0001 Maximum Ratings Parameter Symbol Values Unit V

Contextual Info: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*

MARKING W3 SOT23 TRANSISTOR

Abstract: SOT-23 ZF MARKING ZF SOT-23 Mark ZF sot-23 MARKING CODE Zf 2n4126
Contextual Info: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*

sot23 transistor marking ZF

Contextual Info: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*