SOT-23-5 HF Search Results

SST4124

Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5

sot83

Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions

MARKING CODE R1C

Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95

Contextual Info: SMD ESD Protection Diode CPDT5-5V0U-HF RoHS Device Halogen Free Features SOT-23-5 -IEC61000-4-2 Level 4 ESD protection. -Surface mount package. 0.119 3.02 0.111(2.82) -High component density. 0.067(1.70) 0.059(1.50) Mechanical data -Case: SOT-23-5 Standard package, molded

SOT-23-5 MARKING VF

Abstract: marking w1 sot-23-5 w1 sot-23-5 SOT-23-5 VF sot 23-5 marking code QW-JP006 sot-23-5 marking code MARKING e SOT235 marking code VC Sot 23-5 diode smd marking 1A
Contextual Info: SMD ESD Protection Diode CPDT5-5V0U-HF RoHS Device Features -Halogen free. -IEC61000-4-2 8kV Contact , 15kV(air). SOT-23-5 -Surface mount package. 0.119(3.02) 0.111(2.82) -High component density. Mechanical data 0.067(1.70) 0.059(1.50) -Case: SOT-23-5 Standard package, molded

Contextual Info: SMD ESD Protection Diode CPDT5-5V0U-HF RoHS Device Halogen Free Features SOT-23-5 -IEC61000-4-2 8kV Contact , 15kV(air). 0.119(3.02) 0.111(2.82) -Surface mount package. -High component density. 0.067(1.70) 0.059(1.50) Mechanical data -Case: SOT-23-5 Standard package, molded

Contextual Info: SMD ESD Protection Diode CPDT5-5V0U-HF RoHS Device Halogen Free Features SOT-23-5 -IEC61000-4-2 Level 4 ESD protection. -Surface mount package. 0.119 3.02 0.111(2.82) -High component density. 0.067(1.70) 0.059(1.50) Mechanical data -Case: SOT-23-5 Standard package, molded

sot-23-5 marking code

Abstract: marking w1 sot-23-5 sot 23-5 marking code w1 sot-23-5 MARKING e SOT235 SMD MARKING CODE HF smd marking HF marking BD sot 23-5 e05 marking marking code 5
Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDT5-5V0C-HF RoHS Device Features Halogen free. Bi-directional ESD protection of 4 lines. IEC61000-4-2 8kV(Contact), 16kV(air). SOT-23-5 Operating voltage: 5V. 0.119(3.02) 0.111(2.82) Mechanical data Case: SOT-23-5 Standard package,

bc850c.215

Contextual Info: 100 Surface Mount Devices Wideband Transistors cont. Characteristics NF @ f g um @ f (dB) (MHz) (MHz) (dB) Package Outline v CEO (V) Ratings •c (mA) SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 15 5 15 15 15 50 6.5 18 70 120 300 32 150 300 350 1.6 5 9 9 9 SOT-23

Contextual Info: RB731U SURFACE MOUNT TRIPLE SCHOTTKY DIODES SOT- 23-6L This device features three electrically-isolated Schottky diodes housed in a very small SOT-23-6L package. It is ideal for applications where board space is at a premium. 4 5 FEATURES 6 3 Low reverse leakage current guaranteed <0.98uA @ 25V

je34

Contextual Info: MPSA92 MMBTA92 PZTA92 SOT-23 SOT-223 M a rk : 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units

14ej

Abstract: BCW70 MMBT5086 TRANSISTOR MARKING 06 i marking
Contextual Info: SAMSUNG SEMICONDUCTOR 1INC BCW70 I D J| 000751? 5 | PNP EPITAXIAL SILICON TRANSISTOR T-£P - (S. GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

KSA640

Abstract: KSP4250A
Contextual Info: FUNCTION GUIDE TRANSISTORS 1.2 Low Noise Transistors 1.2.1 SOT-23 Type Transistors Condition NF dB Device and Polarity (Marking) Condition Frequency Condition hFE VCE(satXV) •b (mA) MIN MAX lc (mA) KST6428(1 K) 4 Audio 50 0.2 5 0.1 250 650 100 5 KST2484(1U)

transistor 45 f 122

Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
Contextual Info: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X

KSP12

Abstract: KST63
Contextual Info: FUNCTION GUIDE TRANSISTORS 1-5. Darlington Transistors 1-5-1. SOT-23 Type Transistors Condition Device and Polarity NPN Vceo V PNP KST13<1M) KST14I1N) 30 30 30 30 KST63(2U) KST64(2V) lc (A) lc <mA) MIN 5 5 5 5 100 100 100 100 10K 10K 10K 10K 0.3 0.3 0.5

A15M

Abstract: s/ksmh12/2.27/30/smd a15m
Contextual Info: KST2907A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

MARKING W2 SOT23 TRANSISTOR

Abstract: MMBC1623L6
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBC1623L6 lq E | 0007850 | 3 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: KSC3265 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER SOT-23 • Complement to KSA1298 ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current

kst4126

Contextual Info: KST4126 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-2 5 t: C haracteristic Symbol Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: AP2320GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 100V RDS ON Small Package Outline ID Surface Mount Device 5 0.25A S RoHS Compliant & Halogen-Free SOT-23 G D Description

Contextual Info: SAMSUNG SEMICONDUCTOR •INC BCW70 i 1*|E D j | 7 cit.m M a 000753.? 5 | PNP EPITAXIAL SILICON TRANSISTOR T - « a q - is . GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C l 1 Characteristic Symbol Rating Unit 45 5 100 350 150 V t

MARKING 1G TRANSISTOR

Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Symbol Collector Base Voltage Rating Unit VcBO KST05 KST06 Collector-Emltter Voltage KST05 KST06 Emitter-Base Voltage Collector Current

MARKING 1G TRANSISTOR

Abstract: KSP05 KST05 KST06 transistor mark 06 LC 300-S sot 23 mark BB
Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T .= 2 5 °C Characteristic Rating Symbol Collector Base Voltage % Unit VcBO KST05 KST06 Collector-Emitter Voltage KST05 KST06 Emitter-Base Voltage Collector Current

KSR1010

Abstract: FJN3303R ksr2102 KSR2105 FJV4103R FJV3101R FJV3109R FJV3110R ksr1002 FJV3113R
Contextual Info: Discrete Small Signal Digital Products VCEO V VCBO (V) IC R1 R2 hFE Max (A) (Kohm) (Kohm) Min Max VEBO (V) Saturation Voltage @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-23 NPN Configuration FJV3109R 40 40 5 0.1 4.7 - 100 600 5 1 0.3 10 1 KSR1109