300JU Search Results

Contextual Info: r r i m ü TECHNOLOGY LTC490 Differential Driver and Receiver Pair FCATURCS D €SC M PTIO n • Low Power: Ice = 300juA Typical ■ Designed for RS485 or RS422 Applications ■ Single 5V Supply ■ -7V to 12V Bus Common-Mode Range Permits ±7V Ground Difference Between Devices

UC3861 application note

Contextual Info: 1 1 |application INFO available | UNITRODE UC1861-1868 UC2861-2868 UC3861-3868 Resonant-Mode Power Supply Controllers FEATURES DESCRIPTION • Controls Zero Current Switched ZCS or Zero Voltage Switched (ZVS) Quasi-Resonant Converters The UC1861-1868 family of ICs is optimized for the control of Zero Cur­

35606

Abstract: NR041
Contextual Info: sa NATL S E M I C O N D { D I S C R E T E } 650 1130 2T 0 . NATL SEMICOND, bsoiiao D0 3 Sb0 h dëT| DISCRETE 28C 35605 r- National Semiconductor D * o fiC NR041(NPN) low-level signal switching transistor features | 1 | package and lead coding • 40mV guaranteed V c e (sat) characteristics at

Transistor 3TY

Abstract: CLED400 CLT4140 CLT4150 CLT4160
Contextual Info: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed

SSP4N60

Abstract: 250M SSP4N55 diode lo2a 120Vn
Contextual Info: N-CHANNEL POWER MOSFETS SSP4N60/55 FEATURES • • • • • • • Lower R d s <o n Im proved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

D0233

Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Contextual Info: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

04NG

Abstract: DIODE T25 IRFY230 LE17 mosfet 100a 200v
Contextual Info: bOE J> m A1331Û7 GDDOSS4 T2S ISMLB " T 3 ° l- U SENELAB PLC 5EMELAB IRFY230 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS l.F FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

TOLD-9211

Abstract: told 9211
Contextual Info: X T L I f l C A E TECHNOLOGY _ LT1110 Micropower DC-DC Converter Adjustable and Fixed 5V, 12V F€RTUR€S D C S C R IPTIO n • Operates at Supply Voltages From 1,0V to 30V ■ Works In Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components

BFW44

Abstract: BFW transistors bfw 10 transistor BFW43
Contextual Info: BFW 43 BFW 44 SILICON PLANAR PNP HIGH V O L T A G E AM PLIFIERS T he BFW 43 and B F W 4 4 are silico n p lanar e p ita x ia l PNP tran sisto rs in Jedec T O -1 8 B F W 4 3 and Jedec T O -3 9 (B F W 4 4 ) m etal cases. B o th devices are designed fo r use in a m p lifie rs w here high voltage and high gain are necessary.

IRFP450

Abstract: IRFP 450 application IRFP451 IRFP450 POWER IRFP452 IRFP453 P452 application IRFP450 IQR 2400 JVM RELAY
Contextual Info: -Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 50 75 100 125 T q . C A S E T E M P E R A T U R E °C Fig. 12 — T yp ica l O n-R e sistance V s. D rain C urrent Fig. 13 — M a x im u m D ra in C u rre n t V s. Case Tem perature T E l * 0.5 B V q S S

BFR18

Abstract: jca amplifier
Contextual Info: BFR18 SILICON PLANAR NPN H IG H -VO LTA G E , H IG H -C U R R E N T A M PLIFIER The BFR 18 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. This device is designed for amplifier applications over a wide range of voltage and current.

BFX17

Contextual Info: SILICON PLANAR NPN B F X 17 CLA SS C V H F A M P L IF IE R The BFX 17 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-voltage, high-current class C VHF amplifier applications. A B S O L U T E M A X I M U M R A T IN G S

TRANSISTOR 2SC

Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc
Contextual Info: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­

2N6794

Contextual Info: SEMELAB LTD 37E D • Û1331Ô7 GOODBll fl J AN 0 5 1988 <y\ 1 SEMELAB 2N 6793 2N 6794 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 ìi APPLICATIONS T • FAST SWITCHING 8.5 max. 1 • MOTOR CONTROLS k - 5 .H • POWER SUPPLIES

2SC2526

Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­

LTC1292BMJ8

Contextual Info: / T u n e A ß _LTC1292 T E C H N O LO G Y Single C h ip 12-Bit D a ta A cq u isitio n System F€flTUR€S DcscniPTion • B u ilt-In S a m p le and Hold ■ S ingle S u p p ly 5V O peration ■ D irect 3 -W ir e Interface to M o s t M P U Serial P o rts and

8X330

Abstract: M2FM m2fm data format crystal quartz 24mhz floppy controller pinout 8X300 8x300 Signetics Application Notes transistor WC 8T32 N8X330
Contextual Info: Signetics 8X330 Floppy Disk Formatter/ Controller Product Specification Microprocessor Products PIN CONFIGURATION DESCRIPTION FEATURES The Signetics 8X330 Floppy Disk For­ matter/Controller is a monolithic periph­ eral device of the 8X300 Family. The chip uses Bipolar-Schottky/12L-Techno

Laser Diode for cr rw

Abstract: b0711 tsz02201 BU9390FV BU9390FV-1 BU9390FV-1-2 TSZ22111
Contextual Info: RDNm PRODUCTS TYPE Sem iconductor IC BU9390FV STRUCTURE - Silicon Monolithic Integrated Circuit PRODUCT SERIES •' 4CH Laser Diode Driver fo r CD-R/RW TYPE : BU9390FV PACKAGE OUTLINES : Figure. 1 BLOCK DIAGRAM Figure. 2 APPLICATION Figure. 3 TEST CIRCUIT

SGSD00036

Abstract: SGSD00037 SGSD00038 SGSD00039 SGSD00040 SGSD00041 Lb 598 d transistor* SGSD00038
Contextual Info: S G S-THOHSON G7E D I 7121237 GGlflTMB 1 73C 18771 D Z ? - t * SGSD00036/38 SGSD00037/39 SGSD00040/41 MULTIEPITAXIAL MESA HOLLOW EMITTER NPN A D V A N C E D AT A H IGH V O LT A G E FAST SW ITCHING POWER T R A N SIST O R S The SGSD00036 and SGSD00038, the SGSD00037 and SGSD00039, the SGSD00040 and

Reeves Hoffman 101

Abstract: EL4585 video genlock pll soic 8 EL4583 EL4583C EL4584 EL4585C EL4585CN EL4585CS
Contextual Info: EL4585C EL4585C LPicflMANCEAN4Lfl&.NTEGRTOCDcu:Ts Hovizotltol GcTllock, 8 Fg J Features General Description • 36 M H z, general purpose P L L • 8 F s c tim ing. (Use th e EL4584 for 4 F s c • C om patible w ith EL4583C Sync S eparator • VCXO, X tal, or LC ta n k

1F42

Abstract: up 5135 50v 200a G10 SC4 A00E pace1750 mil-std-1750a 1f44 ior 5130 f10 SC4 PIC Design
Contextual Info: PACE1752/1754 SINGLE CHIP, 40 MHz CMOS PROCESSOR INTERFACE CIRCUIT PIC IP IB IIL O IM IO N IA H V FEATURES • The RftCE1752/1754 (PIC) is a support chip for the RACE1750A Processor. It eliminates the SSI/MSI Logic and external system functions required in

display 7 segmento sm 4105

Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
Contextual Info: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)

Contextual Info: Miniature Type Crystal Resonators AT-49, AT-38 • Features • Crystal resonators with superior frequency stability for standard clock oscillation for microprocessors. • A T -49 type also works well for visual applications. ■ Series Resistance Type Frequency

Contextual Info: “BIG IDEAS IN BIG POWER ” • ■ ■ PowerTech ■ 40 AMPERES PT-3526 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5V @ 20A h p E . 5 m in. @ 4 0 A I s / B .