SOT-252 20V Search Results

MC4044P

Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
Contextual Info: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

B08 REGULATOR

Abstract: voltage regulator sot 223 18BSC TS39100 transistor npn 12V 1A Collector Current
Contextual Info: TS39100 1A Ultra Low Dropout Voltage Regulator SOT-223 TO-252 DPAK Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS39100 are 1A ultra low dropout linear voltage regulators that provide low voltage, high current output from an

2SD965

Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252

TRANSISTOR MPS-A44

Abstract: transistor 400V sot MPSA44
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  1 1 FEATURES TO-252 SOT-89 * Collector-Emitter Voltage: * VCEO=400V UTC MPSA44 * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA 1 1 TO-92 TO-92NL 1 TO-126

TS39100

Abstract: TS39104CS SOP8 PNP Transistor Package 2525l
Contextual Info: TS39100/1/2/3/4/5 1A Ultra Low Dropout Voltage Regulator with Multi-Function SOT-223 TO-252 DPAK Pin Definition: TS39100CWxx 1. Input 2. Ground (tab) 3. Output Pin Definition: TS39100CPxx 1. Input 2. Ground (tab) 3. Output SOP-8 Pin Definition: TS39101CSxx

2SB1132

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L

APM3054N

Abstract: 0118-B transistor apm3054n equivalent J-STD-020A marking 8A* sot-223 m3054n
Contextual Info: APM3054N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/15A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package 1

APM3055L

Abstract: 3055L APM3055L voltage APM3055L equivalent APM3055L datasheet J-STD-020A marking 3055l f 3055l A6 sot223
Contextual Info: APM3055L N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages

PJ1386

Abstract: PJB1386 PJB1386CY
Contextual Info: PJB1386 PNP Epitaxial Silicon Transistor T he PJ1386 is an epitaxial planar type PNP silicon transistor SOT-89 TO-252 FATURES z Excellent DC current gain characteristics z Low VCE sat VCE(sat) = -0.35V (Typ) (IC/IB = -4A/-0.1A) Pin: 1.Base ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )

3a npn to126 transistor

Abstract: 2sd1060l 2SD1060
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR „ 1 SOT-89 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A 1 TO-126 1 TO-92 1 TO-220 1 1 TO-252 TO-251 *Pb-free plating product number: 2SD1060L

3023n

Abstract: APM3023N A102 J-STD-020A M3023 TO-252-E
Contextual Info: APM3023N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages

voltage regulator sot 223

Contextual Info: TS39100 1A Ultra Low Dropout Voltage Regulator SOT-223 TO-252 DPAK Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS39100 are 1A ultra low dropout linear voltage regulators that provide low voltage, high current output from an extremely small package. This regulator offers extremely low dropout (typically 400mV at 1A) and very low

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

LP4101LT1G

Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LP2301LT1G

Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

ln2312

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LN2312LT1G

Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

T410

Abstract: T435 Triac T435
Contextual Info: SGS-THOMSON ’0 ^ M iM T41o 0 g S T 4 3 5 HIGH PERFORMANCE TRIACS FEATURES • ITRMS = 4 A ■ V drm = 400 V to 800 V ■ SENSITIVE GATE : lGT s 10 mA ■ HIGH COMMUTATION : (dl/dt c > 3.5 A/ms DESCRIPTION The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN de­

ahr 49 transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor *32V, *0.5A L2SA1036K*LT1G L2SA1036KPLT1G FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. L2SA1036KQLT1G L2SA1036KRLT1G The G.Suffix Denotes a Pb-Free Lead Finish

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

Contextual Info: LESHAN RADIO COMPANY, LTD. High –Speed Switching Diode LMDL914T1G LMDL914T1G Featrues 1 Pb-Free Package is available. ORDERING INFORMATION 2 Device Package Shipping LMDL914T1G SOD-323 3000/Tape&Reel LMDL914T3G SOD-323 10000/Tape&Reel SOD- 323 1 CATHODE MAXIMUM RATINGS