SOT-32 BS Search Results

ATF-13136-TR1

Abstract: transistor tag 306 MARK A1 SOT-143 sot-23 6121 ATF13136-TR1 Amplifier Micro-X "marking code" D
Contextual Info: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-343, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to

ATF-13136-TR1

Abstract: ATF13136 atf-13136 HPMX-5001 SSOP-16 TQFP-48 On semiconductor date Code sot-143 micro-x marking code E1 transistor tag 306
Contextual Info: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to cover standards on tape and reel

BULT118

Abstract: BULK118
Contextual Info: BULK118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BULK118 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE AND SAME PINS OUT Vs BULT118 SOT-32 PACKAGE STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS

SO930

Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
Contextual Info: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot

Contextual Info: BD227 BD229 BD231 J K . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, BD228 and BD230.

H7545

Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
Contextual Info: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60

Transistors bd 133

Abstract: C 1972 transistor transistor IC BT 136 BD229 BD231 transistor IC BT 134 BD227 BD226 BD230 TRANSISTOR BD 137
Contextual Info: BD227 BD229 BD231 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, 8D228 and BD230. QUICK REFERENCE DATA

Transistor 834

Abstract: MJE210 TRANSISTOR B 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

MJE3440

Abstract: sot-32 bs
Contextual Info: MJE3440 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR • ■ DESCRIPTION The MJE3440 is a NPN silicon Epitaxial Planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.

ST1803DFP

Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Contextual Info: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D

Contextual Info: : S v m Se m i : 5YM5EMI SEMICONDUCTOR BCW61B SOT -23 Plastic Encapsulate Transistors TRANSISTOR PNP FEATURES Power dissipation PCM : 0.25 Collector current Icm : W -0.2 (Tamb=25 °C) A Collector base voltage V ( b r )cbo : ~32 V Operating and storage junction temperature range

2N5657

Contextual Info: 2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR • ■ DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.

LTACQ

Abstract: LTC6910-2 LTC6910-1 LTC6910-3 LTC6910-2CTS8 sot-23 marking code 352
Contextual Info: Final Electrical Specifications LTC6910-2 Digitally Controlled Programmable Gain Amplifier in SOT-23 April 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 3-Bit Digital Gain Control 0, 1, 2, 4, 8, 16, 32 and 64V/V 8-Pin TSOT-23 Package

LTC6910-2

Abstract: LTC6910-1 LTC6910-3 LTACQ Automatic Gain Control LTC6910-2CTS8
Contextual Info: Final Electrical Specifications LTC6910-2 Digitally Controlled Programmable Gain Amplifier in SOT-23 March 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 3-Bit Digital Gain Control 0, 1, 2, 4, 8, 16, 32 and 64V/V 8-Pin TSOT-23 Package

34063

Abstract: led driver circuit 34063 34063 application note 34063 application INA-34063 34063 schematic led driver 34063 marking 34 sot-363 rf 18 sot-363 rf power amplifier a006
Contextual Info: 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications

34063

Abstract: 34063 application note 34063 schematic 34063 Application Notes marking 34063 INA-34063 34063 circuit table
Contextual Info: 3.0 GHz Medium Power Silicon RFIC␣ Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9␣ GHz • Single +3V Supply • Unconditionally Stable

ex 34063

Abstract: 34063 schematic 34063 application note
Contextual Info: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm Pj ¿3 at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply

34063 schematic

Abstract: 34063 application note 34063 34063 application led driver circuit 34063 a006 ex 34063 led driver 34063 rfics marking 76 ANA004R
Contextual Info: 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications

Contextual Info: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 24 @ VGS = 4.5V 3 32 @ VGS = 2.5V 3 37 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology

Contextual Info: BF457 to BF459 J v _ SILICON PLANAR TRANSISTORS fo r vid e o o u tp u t stages N-P-N transistors in a SOT-32 plastic package intended for video output stages in black-and-white and in colour television receivers. Q UICK R E F E R E N C E DATA

B 1403 N

Contextual Info: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol

1403

Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.

transistor BD 378

Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
Contextual Info: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.

BD226

Abstract: T-33-07 C 1972 transistor BD227 BD228 BD230 BD229 BD231 3307 jnib
Contextual Info: _ PHILI P S I N T E R N A T I O N A L BD226 BD228 BD230 J m SbE ]> 711DflEti 004EA314 ^37 • P H I N SILICON PLANAR EPITAXIAL POWER TRANSISTORS T~ 3 3 - 0 7 G en eral purpose n -p-n tra n sisto r s in a SOT-32 p lastic envelope esp ecially recom m ended