SOT-323 MARKING CODE A2 Search Results

diode a4s

Abstract: marking code fs 1 sot 323 A4s diode
Contextual Info: SIEMENS BAV 70W Silicon Switching Diode Array •For high speed switching applications ■Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 =A1 Q62702-A1030 2 = A2 Package 3 = C1/CÍ SOT-323 Maximum Ratings per Diode Parameter Symbol

Contextual Info: SIEMENS BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode num m Type Marking Ordering Code Pin Configuration BAW 56W A1s Q62702-A1031 1 =C1 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Symbol Parameter

Q62702-A1031

Abstract: marking code AC sot 323 diode
Contextual Info: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

A1030 transistor

Abstract: Q62702-A1030 marking code a4s
Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

a7s diode

Abstract: bav99w diode marking 355
Contextual Info: SIEMENS BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications TT Type Marking Ordering Code BAV 99W A7s IF Pin Configuration Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Parameter

Q62702-A1051

Abstract: A7S marking code A1051 Q62702A1051
Contextual Info: BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration BAV 99W A7s 1=A1 Q62702-A1051 2=C2 Package 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

A1S diode

Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
Contextual Info: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter

marking code 68W

Abstract: 68W SOT marking code 68W sot 68w diode transistor 68W MARKING 68W DIODE BAT 68w transistor BAT68W BAT68-04W
Contextual Info: BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type Marking Ordering Code Pin Configuration Package BAT 68-04W 84s Q62702- 1 = A1 2 = K2 3 = K1/A2 SOT-323

Contextual Info: S IE M E N S BAV 99W Silicon Switching Diode Array >Connected in series 1For high speed switching applications C1/A2 nr T J Type Marking Ordering Code Pin Configuration BAV 99W A7s Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Symbol

Contextual Info: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor

MUN5214T1

Abstract: MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1
Contextual Info: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

BC846

Abstract: BC846A BC846B BC847 BC847A BC847B BC848 BC848A
Contextual Info: BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.

BC847

Abstract: A1 MARKING SC-70 BC846 BC846A BC846B BC847A BC847B BC848 BC848A BC847BWT1G
Contextual Info: BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.

BC847BWT1G

Abstract: BC848BWT1G BC846 BC846A BC846AWT1 BC847 BC847A BC847AWT1 BC848 BC848AWT1
Contextual Info: BC846AWT1, BC847AWT1, BC848AWT1 Series General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

LMUN5113T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G Series PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LMUN5111T1G Series S-LMUN5111T1G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

LMBD2835LT1

Abstract: LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G Diode A3X
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE • Pb-Free Package is available. LMBD2835LT1G LMBD2836LT1G ORDERING INFORMATION Device Marking Shipping LMBD2835LT1G A3X 3000/Tape&Reel LMBD2835LT3G A3X 10000/Tape&Reel LMBD2836LT1G A2X 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

SOt323 marking code 6X

Abstract: MUN5111T1 MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G
Contextual Info: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount

Contextual Info: MUN5211T1G Series, SMUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor