40MMM Search Results

Contextual Info: SIEMENS BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode num m Type Marking Ordering Code Pin Configuration BAW 56W A1s Q62702-A1031 1 =C1 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Symbol Parameter

Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current

BAV70S

Abstract: Q62702-A1097 5a2 DIODE
Contextual Info: BAV 70S Silicon Switching Diode Array • For high speed switching applications • Common cathode • Internal galvanic isolated Diodes Arrays in one package Type Marking Ordering Code Pin Configuration BAV 70S A4s 1/4=A1 Q62702-A1097 2/5=A2 Package 3/6=C1/2 SOT-363

JIS-C5202-7

Abstract: FL1001 JIS-C-5202-7
Contextual Info: Resistors Chip resistor networks MNR12 1608X2 size l Features l)Convex electrodes Easy to check the fillet after soldering is finished. duced. 4)Compatible with a wide range of mounting equipment, Squared corners make it excellent for mounting using 2)Small, light, rectangular 2-chip network

diode marking 63s SOT23

Abstract: BAT 61 marking 301 sot-23 marking 65s sot-23 SOT23 Marking 64s bat 301 l marking code 64 sot23 6 65s sot23 marking 64 SOT23 Siemens ESP 100
Contextual Info: SIEMENS B A T 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESP: Electrostatic Discharge sensitive device, observe handling precautions!

diode A6s

Abstract: marking code 16W Q62702-A1050 a6s diode marking 16w
Contextual Info: SIEM EN S BAS 16W Silicon Switching Diode • For high speed switching applications Marking Ordering Code Pin Configuration BAS 16W A6s 1=A Q62702-A1050 Package o II CO Type SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75 Peak reverse voltage

Contextual Info: SIEMENS BAT 14-03W S ilic o n S c h o ttk y D io de • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: Electrostatic Discharge sensitive device, observe handling precautions! Marking Type Pin Configuration Q62702-A1103 1= A

06.96

Contextual Info: SIEMENS BAT 64-07 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • integrated diffused guard ring • Low forward voltage ESP: Electrostatic Discharge sensitive device, observe handling precautions!

AB marking code smd schottky diode

Abstract: AB marking code smd diode SMD DIODE marking AB smd diode marking code 2a
Contextual Info: Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • For low-loss, fast recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD ESP: Electrostatic Discharge sensitive device, observe handling precautions!

DS30453

Abstract: DS00104 PIC16C54 PIC16C5X PIC16HV540
Contextual Info: Back PIC16HV540 Enhanced PIC16C54 EPROM-Based 8-Bit CMOS Microcontroller With On-Chip Voltage Regulator High-Performance RISC CPU: Device Pins I/O Pin Configurations EPROM RAM ✯ ✯ ✯ ✯ ✯ ✯ RA2 •1 18 RA1 RA3 2 17 RA0 T0CKI 3 16 OSC1/CLKIN MCLR/VPP

5a2 DIODE

Abstract: Diode Marking WA diode a4s BAV70S marking code diode wp
Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array 1For high speed switching applications 1Common cathode •Internal galvanic isolated Diodes Arrays in one package C1/C2 U *1 Fl Fl FI U*t lil2 a Ü' c i/c a Type Marking Ordering Code Pin Configuration BAV 70S

Q62702-A1188

Abstract: a1188
Contextual Info: BAT 60A Silicon Schottky Diode Preliminary data • Rectifier Schottky diode with extreme low VF drop for mobile communication • For power supply • For clamping and protection in low voltage applications • For detection and step-up-conversion ESD: ElectroStatic Discharge sensitive device, observe handling precautions!

Contextual Info: S IE M E N S BAT 64-07 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage E S P : Electrostatic Discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: Electrostatic Discharge sensitive devicé, observe handling precautions! Type Marking Q62702-A1103 1=A Package o Pin Configuration

BAS70-07W

Abstract: Q62702-A1186 Q62702-A118 marking 77s
Contextual Info: BAS70-07W Silicon Schottky Diodes Preliminary data • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detection and mixing ESD: ElectroStatic Discharge sensitive device, observe handling precautions!

Q62702-B583

Contextual Info: BB 545 Silicon Tuning Diode Preliminary data • For tuning UHF and VHF TV Tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 545 white U 1=K SOD-323 Q62702-B583 2=A Maximum Ratings Parameter Symbol

A1188

Contextual Info: Silicon Schottky Diode Prelim inary data • Rectifier Schottky diode with extreme low VF drop for mobile com munication • For power supply • For clamping and protection in low voltage applications • For detection and step-up-conversion ESD: E lectrostatic Discharge sensitive device, observe handling precautions!

A1189

Abstract: 1350T
Contextual Info: Silicon Schottky Diode Prelim inary data • Rectifier Schottky diode for mobile communication • Low voltage high inductance • For power supply • For clamping and protection in low voltage applications • For detection and step-up-conversion ESD: E lectrostatic Discharge sensitive device, observe handling precautions!

BAT 61

Abstract: 64W103 A1162 BAT64-05W BAT64-06W Q62702-A1159 Q62702-A1160 Q62702-A1161 Q62702-A1162 06w103
Contextual Info: BAT 64W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration BAT 64-04W BAT64-05W BAT64-06W ESD: ElectroStatic Discharge sensitive device, observe handling precautions!

Q62702-A1050

Abstract: a6s marking A1050 A6s DIODE diode A6s
Contextual Info: BAS 16W Silicon Switching Diode • For high speed switching applications Type Marking Ordering Code Pin Configuration BAS 16W A6s 1=A Q62702-A1050 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85

Contextual Info: S IE M E N S BAV 99W Silicon Switching Diode Array >Connected in series 1For high speed switching applications C1/A2 nr T J Type Marking Ordering Code Pin Configuration BAV 99W A7s Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Symbol

marking 513 SOD-323

Contextual Info: SIEMENS BB 545 Silicon Tuning Diode Preliminary data • For tuning UHF and VHF TV Tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 545 white U Q62702-B583 1 =K SOD-323 2=A Maximum Ratings Symbol

Q62702-A1103

Abstract: diode bat 85
Contextual Info: BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-03W O/white Q62702-A1103 Pin Configuration

A1030 transistor

Abstract: Q62702-A1030 marking code a4s
Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage