SOT-6 33 PACKAGE Search Results

transistor c33

Abstract: umt31 "device marking" c33 marking C33 8358M
Contextual Info: NPN VHF/UHF transistor Die no. C-33 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm UMT3 Features available in a UMT3 (UMT, SOT-323) package, see page 300 1 .3 ± Q . I 0 .6 5 0 .6 5 small output capacitance, C ob = 1.5 pF (max) at V CB = 10 V

uPC2710TB

Abstract: AGS SOT363
Contextual Info: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • HIGH GAIN: 33 dB TYP • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: Vcc = 4.5 to 5.5 V

Contextual Info: Preliminary GaAs IC 30 dB Voltage Variable Attenuator Single Positive 3 V Control 1.7–2.5 GHz AV110-73 Features SOT-6 • Single Positive +3 V Control Voltage 0.074 1.90 mm REF. ■ 33 dB Attenuation Range @ 1.9 GHz ■ Excellent Linearity Performance

Voltage Controlled Attenuator

Abstract: AV110-73
Contextual Info: I GaAs 1C 30 dB Voltage Variable Attenuator Single Positive 3 V Control 1.7-2.5 GHz 11*j:£§ •i'x/ ESAlpha A V 110-73 Features SOT-6 Single Positive 3 V Control Voltage 0.074 1.90 mm REF. 33 dB Attenuation Range @ 1.9 GHz r i 1 PIN 6 - Excellent Linearity Performance

esd protect mosfet

Abstract: FULLY PROTECTED MOSFET ultra low igss pA mosfet TSM3464CX6
Contextual Info: TSM3464 20V N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 21 @ VGS = 4.5V 8 25 @ VGS = 2.5V 7 33 @ VGS = 1.8V 6 Block Diagram ● Advance Trench Process Technology

AV110-73

Contextual Info: Preliminary GaAs IC 30 dB Voltage Variable Attenuator Single Positive 3 V Control 1.7–2.5 GHz AV110-73 Features SOT-6 • Single Positive 3 V Control Voltage 0.074 1.90 mm REF. ■ 33 dB Attenuation Range @ 1.9 GHz ■ Excellent Linearity Performance 0.126 (3.20 mm)

Contextual Info: .060" NPN Phototransistors VTT1131, 3 2 , 33 TO-46 Lensed Package E G & G VACTEC T -4 Î-6 1 PACKAGE D IM EN SIO N S inch mm .206 (5 .2 3 ) •50 ( 12.7 ) 205 ( 5 .21) CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: SOT ABSOLUTE M AXIMUM RATINGS fl PRODUCT DESCRIPTION

MARKING D12

Abstract: N-Channel mosfet sot-26
Contextual Info: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●

marking pa sot-26

Abstract: n-channel mosfet transistor ultra low igss pA TSM3446
Contextual Info: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●

y parameter of mosfet

Abstract: TSM3446 marking pa sot-26
Contextual Info: TSM3446 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●

TSM3462

Abstract: TSM3462CX6
Contextual Info: TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.0 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Block Diagram ● Advance Trench Process Technology

Contextual Info: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology

4800 mosfet

Abstract: esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800
Contextual Info: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology

bdx340

Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Contextual Info: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8

B0679

Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52

DS1669-100

Abstract: TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S
Contextual Info: ORDERING INFORMATION DEVICE DS0621–SDK DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC 14–Pin DIP

BUT11AX

Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
Contextual Info: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS High-voltage and switching NPN power transistors HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS type number package 42 18 40 50 BUX86P BUX84F BUX84 BUW84 SOT82 SOT 186 TO-220AB SOT82 20 32

SOT23 MARKING CODE 8G

Abstract: 8C SOT-23 ON Semiconductor marking 81M marking code 81R MMBZ5221BLT1 MMBZ5222BL MMBZ5223BL MMBZ5224BL MMBZ5225BL MMBZ5227BL
Contextual Info: MMBZ5221BLT1 Series Preferred Device Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

DS1425L-F5

Abstract: rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S
Contextual Info: ORDERING INFORMATION DEVICE DS0621–SDK DS0630 DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC

zener sot-23 marking 330

Contextual Info: MMBZ52xxBLT1 Series, SZMMBZ52xxBLT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

MARKING 313 sot-23

Contextual Info: MMBZ5221BLT1 Series Preferred Device Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

Contextual Info: SPECDIL AS D series SPECDILAS SPECDILAS D-XXXX DFB lasers for spectroscopy Distributed Feedback diode laser with exact match to any customer specified wavelength hermetically sealed subcomponent, SOT 5.6 package, window AR coated and tilted available for following wavelength range λ: 1200 – 1580 nm

Contextual Info: MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

MMBZ5232BLT1G

Abstract: AP 494 Application Note MMBZ5261BLT1G
Contextual Info: MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well