SOT1215 Search Results
SOT1215 Price and Stock
Nexperia BC847AQAZBipolar Transistors - BJT 45 V, 100 mA NPN general-purpose transistor |
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BC847AQAZ | Reel | 30,000 | 5,000 |
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Nexperia PMXB360ENEAZMOSFETs 12 V, N-channel Trench MOSFET |
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PMXB360ENEAZ | Reel | 25,000 | 5,000 |
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Nexperia BC857AQAZBipolar Transistors - BJT SOT1215 45V .1A PNP GP TRANS |
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BC857AQAZ | Reel | 10,000 | 5,000 |
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Nexperia BC817-40QAZBipolar Transistors - BJT 45 V, 500 mA NPN general-purpose transistors |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC817-40QAZ | Reel | 25,000 |
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Nexperia PMXB43UNEZMOSFETs 30 V, N-channel Trench MOSFET |
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PMXB43UNEZ | Reel | 10,000 |
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SOT1215 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| SOT1215 |
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Footprint for reflow soldering SOT1215 | Original | 377.91KB | 1 | |||
| SOT1215 |
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Plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals | Original | 331.31KB | 1 |
SOT1215 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB75UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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PBSS4260QA DFN1010D-3 OT1215) PBSS5260QA. AEC-Q101 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB75UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB65ENE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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PBSS4230QA DFN1010D-3 OT1215) PBSS5230QA. AEC-Q101 | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB65UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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PBSS5260QA DFN1010D-3 OT1215) PBSS4260QA. AEC-Q101 | |
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Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB56EN DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB65ENE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB120EPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB40UNE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB40UNE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
Original |
PBSS5230QA DFN1010D-3 OT1215) PBSS4230QA. AEC-Q101 | |
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Contextual Info: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
Original |
PBSS5130QA DFN1010D-3 OT1215) PBSS4130QA. AEC-Q101 | |
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Contextual Info: Our broad package range provides maximum flexibility Very small 2 Pins Ultra small DSN0603-2 3 Pins SOT883B (SOT883) 4/5 Pins 1.0 x 0.6 x 0.37 (SOT1215) (SOT1194) Medium power SOD323F SOD323 SOD123F SOD123W SOD128 1.7 x 1.25 x 0.7 1.7 x 1.25 x 0.95 2.6 x 1.6 x 1.1 |
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DSN0603-2 OT883B) OT883) OT1215) OD323F OD323 OD123F OD123W OD128 OT663 | |
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Contextual Info: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB350UPE DFN1010D-3 OT1215) | |
bc807Contextual Info: ' BC807-25QA; BC807-40QA ' 1 45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
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BC807-25QA; BC807-40QA DFN1010D-3 OT1215) BC807-25QA BC817-25QA BC817-40QA bc807 | |
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Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB56EN DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB75UPE DFN1010D-3 OT1215) | |
NXP date code marking
Abstract: a/NXP date code marking
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Original |
PMXB65UPE DFN1010D-3 OT1215) NXP date code marking a/NXP date code marking | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB65UPE DFN1010D-3 OT1215) | |
BC817Contextual Info: ' BC817-25QA; BC817-40QA ' 1 45 V, 500 mA NPN general-purpose transistors Rev. 1 — 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible |
Original |
BC817-25QA; BC817-40QA DFN1010D-3 OT1215) BC817-25QA BC807-25QA BC807-40QA BC817 | |
NXP date code markingContextual Info: DF N1 01 0D -3 PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB43UNE DFN1010D-3 OT1215) NXP date code marking | |
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Contextual Info: Package outline DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215 visible depend upon used manufacturing technology 2x solderable lead end, protrusion max. 0.02 mm (3x) pin 1 index area |
Original |
DFN1010D-3: OT1215 sot1215 | |